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Applied physics letters, ISSN 1077-3118, 2005, Volume 87, Issue 6, p. 061921
There have been long-standing concerns about the stability of the internal structure of nanocrystalline metals. In this letter we examine grain growth in... 
PHYSICS, APPLIED | COPPER | NANOSTRUCTURES | MATERIALS SCIENCE | IMPURITIES | MICROHARDNESS | TEMPERATURE RANGE 0065-0273 K | GRAIN GROWTH | STRESSES | TEMPERATURE DEPENDENCE | CRYSTALS | CRYOGENICS | TEMPERATURE RANGE 0273-0400 K | MECHANICAL TESTS
Journal Article
Physical review letters, ISSN 1079-7114, 2010, Volume 104, Issue 20, p. 202501
Journal Article
Journal of applied physics, ISSN 1089-7550, 2016, Volume 120, Issue 4, p. 043903
Journal Article
Applied physics letters, ISSN 1077-3118, 2016, Volume 109, Issue 1, p. 011104
... K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined... 
ROOM-TEMPERATURE | LASING CHARACTERISTICS | PHYSICS, APPLIED | LASERS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | INDIUM ARSENIDES | LIGHT SOURCES | TEMPERATURE RANGE 0065-0273 K | QUANTUM DOTS | EPITAXY | OPTICAL PUMPING | LANTHANUM SELENIDES | TEMPERATURE DEPENDENCE | TEMPERATURE RANGE 0013-0065 K | LINE WIDTHS | TEMPERATURE RANGE 0273-0400 K | SEMICONDUCTOR MATERIALS
Journal Article
Physical review letters, ISSN 1079-7114, 2010, Volume 105, Issue 3, p. 030404
Journal Article
Applied physics letters, ISSN 1077-3118, 2005, Volume 87, Issue 21, pp. 211912 - 211912-3
.... In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5 × 10 19... 
POINT-DEFECTS | THIN-FILMS | LUMINESCENCE-CENTERS | PHYSICS, APPLIED | PHOTOLUMINESCENCE | OXYGEN | EV RANGE 01-10 | HEAT TREATMENTS | MATERIALS SCIENCE | ION IMPLANTATION | SPECTRA | TEMPERATURE RANGE 0065-0273 K | SEMICONDUCTOR MATERIALS | ZINC OXIDES | Fysik | Physical Sciences
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2013, Volume 102, Issue 16, p. 161114
Journal Article
Applied physics letters, ISSN 1077-3118, 2006, Volume 88, Issue 3, pp. 031911 - 031911-3
A ZnO p - n junction light-emitting diode (LED) was fabricated on a -plane Al 2 O 3 substrate by plasma-assisted molecular-beam epitaxy. NO plasma activated by... 
THIN-FILMS | EPITAXY | PHYSICS, APPLIED | ACCEPTORS | P-N JUNCTIONS | SAPPHIRE | NITRIC OXIDE | SUBSTRATES | LIGHT EMITTING DIODES | MATERIALS SCIENCE | TEMPERATURE RANGE 0065-0273 K | ELECTROLUMINESCENCE | RADIOWAVE RADIATION | LAYERS | ELECTRIC POTENTIAL | MOLECULAR BEAM EPITAXY | PLASMA | QUENCHING | ALUMINIUM OXIDES | TEMPERATURE RANGE 0273-0400 K | SEMICONDUCTOR MATERIALS | ZINC OXIDES
Journal Article
Physical review letters, ISSN 1079-7114, 2011, Volume 106, Issue 10, p. 105304
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2015, Volume 106, Issue 11, p. 113106
Journal Article