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IEEE Electron Device Letters, ISSN 0741-3106, 08/2018, Volume 39, Issue 8, pp. 1145 - 1148
In this letter, we investigate the threshold voltage (V-TH) shift in a p-GaN gate AlGaN/GaN transistor by designed gate-bias pulse measurements. It was found... 
hole injection | p-GaN gate AlGaN/GaN transistors | electron trapping | optical pumping | threshold voltage shift | PHOTOLUMINESCENCE | DEGRADATION | DEVICES | DIODE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2018, Volume 88-90, pp. 656 - 660
Silicon carbide power MOSFETs are used in numerous studies to improve the efficiency or the performance of power electronic converters. However, the gate-oxide... 
Characterization | Measurement protocols | Threshold voltage shift | Fowler-Nordheim | Ageing | 1.7 kV | Robustness | SiC MOSFET | Charge pumping | Reliability | Short-circuit | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | 1.7 kV | ENGINEERING, ELECTRICAL & ELECTRONIC | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2018, Volume 39, Issue 8, pp. 1145 - 1148
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2018, Volume 65, Issue 9, pp. 3831 - 3838
Journal Article
Solid State Electronics, ISSN 0038-1101, 04/2018, Volume 142, pp. 8 - 13
This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias... 
Interface states | AlGaN/GaN HEMT | TCAD ATLAS simulation | Reverse gate bias stress | Threshold-Voltage Shift | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ELECTRON-MOBILITY | MECHANISM | HETEROSTRUCTURES | POLARIZATION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2014, Volume 61, Issue 12, pp. 4299 - 4303
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2019, Volume 40, Issue 1, pp. 87 - 90
A significant positive threshold voltage shift for the PMOSFET of a 28-nm SRAM is reported in this letter. For the first time, it is revealed that Ge atoms may... 
Threshold voltage shift | PMOSFET | Atomic layer deposition | Random access memory | MOSFET circuits | Logic gates | Silicon | embedded SiGe | Transistors | Ge penetration | Silicon germanium | GROWTH-KINETICS | SI1-XGEX | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | Threshold voltage | Penetration | Deposition | Radicals | Silicon germanides
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2015, Volume 62, Issue 12, pp. 4037 - 4043
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 06/2018, Volume 193, pp. 86 - 90
Suspended individual carbon nanotubes show great promise in use as gas sensors, as they are not only highly sensitive and selective, but can be operated at a... 
Fabrication | Carbon nanotubes | Gate coupling | Threshold voltage shift | Gas sensors | PHYSICS, APPLIED | CHEMICAL SENSORS | GRAPHENE | NANOSCIENCE & NANOTECHNOLOGY | ARRAYS | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | AIR-POLLUTION | OPTICS | CIRCUIT | PRISTINE
Journal Article
Journal of Materials Chemistry C, ISSN 2050-7526, 11/2018, Volume 6, Issue 46, pp. 12498 - 1252
2,6-Diphenylanthracene (DPA) thin films have been deposited with a rate range of 0.01 Å s −1 to 3.00 Å s −1 to elucidate the influence of deposition rate on... 
ORGANIC TRANSISTORS | ENERGY | PHYSICS, APPLIED | ALIGNMENT | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHARGE-TRANSPORT | GATE VOLTAGE | ANTHRACENE | PENTACENE | FIELD-EFFECT TRANSISTORS | Thin films | Plasma | Photovoltaic cells | Semiconductor devices | Field effect transistors | Threshold voltage | Hysteresis | Deposition
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2017, Volume 38, Issue 6, pp. 760 - 762
Journal Article
Radiation Physics and Chemistry, ISSN 0969-806X, 01/2017, Volume 130, pp. 221 - 228
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 06/2018, Volume 193, p. 86
Suspended individual carbon nanotubes show great promise in use as gas sensors, as they are not only highly sensitive and selective, but can be operated at a... 
Power consumption | Semiconductor devices | Field effect transistors | Nanotubes | Carbon nanotubes | Threshold voltage | Sensors | Carbon | Gas sensors | Gas detectors | Signal to noise ratio
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 09/2014, Volume 6, Issue 17, pp. 15148 - 15153
The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C60-based organic... 
Parylene interface | n-type OFETs electrical stability | bottom-gate and dual-gate OFETs | bias stress | top-gate | threshold voltage shift | charge trapping | C60
Journal Article
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