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Angewandte Chemie International Edition, ISSN 1433-7851, 01/2016, Volume 55, Issue 3, pp. 965 - 968
Journal Article
Advanced Materials, ISSN 0935-9648, 03/2018, Volume 30, Issue 12, pp. e1706126 - n/a
High‐quality pinhole‐free perovskite film with optimal crystalline morphology is critical for achieving high‐efficiency and high‐stability perovskite solar... 
charge extraction | trap passivation | hydrophobicity | grain boundary | perovskite solar cells | Grain boundaries | Solar cells | Stability | Photovoltaic cells | Efficiency | Polymers | Charge transfer | Lewis base | Energy conversion efficiency | Adducts
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2017, Volume 121, Issue 12, p. 125302
The passivation of In0.53Ga0.47As surfaces is highly desired for transistor performance... 
ATOMIC-HYDROGEN | ENERGY | PHYSICS, APPLIED | SPECTROSCOPY | BORDER TRAPS | SEMICONDUCTORS | Usage | Crystals | Oxidation-reduction reaction | Research | Indium | Structure | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2015, Volume 107, Issue 21, p. 213501
GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorineplasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer... 
PHYSICS, APPLIED | ELECTRICAL-PROPERTIES | TRAPS | ANNEALING | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | PASSIVATION | COMPARATIVE EVALUATIONS | LEAKAGE CURRENT | CAPACITANCE | LAYERS | ELECTRIC POTENTIAL | PLASMA | METALS | GALLIUM ARSENIDES | INTERFACES | ATOMS | FLUORINE | OXIDES | CAPACITORS | SEMICONDUCTOR MATERIALS | SURFACES
Journal Article
Advanced Materials, ISSN 0935-9648, 02/2017, Volume 29, Issue 7, pp. 1604545 - n/a
...), as a multifunctional interlayer, which combines efficient trap‐passivation and electron‐extraction. Perovskite solar cells with IDIC layers yield higher photovoltages and photocurrents, and 45... 
charge extraction | trap passivation | π‐conjugated Lewis base | perovskite solar cells | π-conjugated Lewis base
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2013, Volume 103, Issue 20, p. 202114
.... Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300-430 degrees C... 
ORIGINS | PHYSICS, APPLIED | OXIDE SEMICONDUCTOR | TFTS | Electron traps | Annealing | Indium gallium zinc oxide | Semiconductor devices | Desorption | Thin film transistors | Transistors | Passivity | Semiconductors | Amorphous semiconductors | INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY | TRAPS | ANNEALING | THIN FILMS | ELECTRONS | PASSIVATION | MATERIALS SCIENCE | OXYGEN | HYDROGEN | DESORPTION | TRANSISTORS | BINDING ENERGY | OXIDES | SEMICONDUCTOR MATERIALS | WATER
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 09/2015, Volume 7, Issue 37, pp. 20499 - 20506
Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices... 
high-k | STABILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | interface traps | first-principles modeling | MODEL | Al2O3
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2007, Volume 91, Issue 14, pp. 142101 - 142101-3
.... We also find that passivation of DBs by hydrogen will be ineffective because interstitial hydrogen is also stable exclusively in the negative charge state. 
PHYSICS, APPLIED | TRAPS | INTERFACE | SEMICONDUCTORS | SI/SIO2 | SILICON | TOTAL-ENERGY CALCULATIONS | GATE | MOSFETS | WAVE BASIS-SET
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 05/2016, Volume 49, Issue 24
.... The bilayer stacks without texture also reduce the AM1.5-weighted front side reflectance to 11.8%. The field-effect passivation of Al2O3/TiO2 films is further improved... 
photoluminescence | field-effect passivation | fixed charge density | capacitance-voltage characteristics | effective lifetime | silicon solar cells | interface trap density | THIN-FILMS | PHYSICS, APPLIED | SURFACE RECOMBINATION VELOCITIES | DEPOSITION | OPTICAL-PROPERTIES | NITRIDE | ELECTROLUMINESCENCE | INTERFACE | SILICON SOLAR-CELLS | COATINGS | EFFICIENCY
Journal Article