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Advanced Materials, ISSN 0935-9648, 03/2018, Volume 30, Issue 10, pp. 1870069 - n/a
Fine‐tuning of the energy‐level alignment of molecular tunnel junctions is important to maximize their performance. In article number 1706322, Christian A.... 
π–π interactions | molecular diodes | molecular electronics | graphene electrodes | charge transport | Molecular orbitals | Tunnel junctions | Graphene | Diodes
Journal Article
Nature Materials, ISSN 1476-1122, 2015, Volume 14, Issue 3, pp. 301 - 306
The advent of graphene and related 2D materials1,2 has recently led to a new technology: heterostructures based on these atomically thin crystals(3). The... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | FILMS | PHOTOLUMINESCENCE | MOS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | P-N-JUNCTIONS | EXCITONS | Studies | Engineering | Light emitting diodes | Materials science | Crystals | Tunnelling | Semiconductors | Graphene | Monolayers | Electronics | Light-emitting diodes | Two dimensional | Heterostructures
Journal Article
Nano Letters, ISSN 1530-6984, 02/2012, Volume 12, Issue 2, pp. 699 - 703
Journal Article
Nature Materials, ISSN 1476-1122, 2014, Volume 13, Issue 1, pp. 50 - 56
Highly sensitive microwave devices that are operational at room temperature are important for high-speed multiplex telecommunications. Quantum devices such as... 
ROOM-TEMPERATURE MAGNETORESISTANCE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | EXCITATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | DRIVEN | MULTILAYER | DEPENDENCE | WAVES | MGO | MAGNETIC TUNNEL-JUNCTIONS | EMISSION | CMOS | Nanomaterials | Magnetism | Semiconductors | Signal to noise ratio | Ferromagnetic resonance | Multiplexing | Detectors | High speed | Nanostructure | Devices | Diodes
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 06/2019, Volume 58, Issue 6, p. 60914
Blue LEDs consisting of a buried n+–p+ GaN tunnel junction (TJ), (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on Ga-polar n+-GaN... 
Organic chemistry | Gallium nitrides | Epitaxy | Quantum wells | Optical properties | Molecular beam epitaxy | Organic light emitting diodes | Light emitting diodes | Tunnel junctions | Low resistance
Journal Article
Nano Letters, ISSN 1530-6984, 08/2015, Volume 15, Issue 8, pp. 5408 - 5413
Journal Article
by Sadaf, S. M and Zhao, S and Wu, Y and Ra, Y.-H and Liu, X and Vanka, S and Mi, Z
Nano Letters, ISSN 1530-6984, 02/2017, Volume 17, Issue 2, pp. 1212 - 1218
To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of... 
Nanowire | molecular beam epitaxy | light-emitting diode | AlGaN | core-shell | tunnel junction | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | NM ALGAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | P-TYPE GAN | NITRIDE | CHEMISTRY, MULTIDISCIPLINARY | ELECTROLUMINESCENCE | OHMIC CONTACTS | TEMPERATURE | BOTTLENECK | DISINFECTION | EMISSION | UV LEDS
Journal Article
Nano Letters, ISSN 1530-6984, 10/2011, Volume 11, Issue 10, pp. 4195 - 4199
We report on the electrical characterization of one-sided p+-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process... 
Nanowire | traps | diode | tunneling | dislocations | heterojunction | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | JUNCTIONS | Volt-ampere characteristics | Lattices | Bias | Tunnel diodes | Heterojunctions | Tunneling | Nanowires | Dislocations | Defects
Journal Article
Nano Letters, ISSN 1530-6984, 02/2016, Volume 16, Issue 2, pp. 1076 - 1080
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2015, Volume 107, Issue 10, p. 101103
Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A similar to 6V reduction in... 
PHYSICS, APPLIED | Physics - Materials Science | ELECTRIC POTENTIAL | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | ULTRAVIOLET RADIATION | LIGHT EMITTING DIODES | QUANTUM EFFICIENCY | DOPED MATERIALS | TUNNEL EFFECT | NANOWIRES | POLARIZATION
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2017, Volume 121, Issue 18, p. 184504
Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these... 
BAND-GAP VARIATION | DOPED-TITANIUM-DIOXIDE | TUNNEL-DIODES | PHYSICS, APPLIED | SOLAR-CELLS | CHEMICAL-VAPOR-DEPOSITION | ZNO THIN-FILMS | PHOTOCATALYTIC OXIDATION | SNO2 FILMS | ATOMIC LAYER DEPOSITION | QUANTUM DOTS | Usage | Computer-generated environments | Research | Computer simulation | Diodes | Electron affinity
Journal Article