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1. Full Text Common source power amplifier design for 5G application in 28-nm UTBB FD-SOI technology
by Mohsen, Ali and Ayoub, Mohammad Jaafar and Alloush, Mostafa and Harb, Adnan and Deltimple, Nathalie and Serhane, Abraham
AEUE - International Journal of Electronics and Communications, ISSN 1434-8411, 11/2018, Volume 96, pp. 273 - 278
The telecommunication market examines a highly growing demand for RF mobile devices where low latency and high performance are ongoing improvement. The power... 
FBB: forward body bias | Psat: saturated output power | UTBB FD-SOI: ultra-thin body and box fully depleted silicon on insulator | PAE: power added efficiency | mm-wave PA: milli-meter wave power amplifier | CS: common source | saturated output power | ultra-thin body and box fully | P-sa1: saturated output power | depleted silicon on insulator | amplifier | TELECOMMUNICATIONS | mm-wave PA: milli-meter wave power | UTBB FD-S01 | ENGINEERING, ELECTRICAL & ELECTRONIC | Mobile devices | Transistors | Power amplifiers | Ocean energy resources
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