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1999, 2nd ed., ISBN 9780126738421, 599
This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how... 
Compound semiconductors | Crystal growth | Vapor-plating | Epitaxy | Electronics & communications engineering | Metal organic chemical vapor deposition
eBook
Nature communications, ISSN 2041-1723, 07/2019, Volume 10, Issue 1, pp. 3361 - 8
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium... 
Solar cells | Growth conditions | Gallium | Growth rate | Intermetallic compounds | Gallium arsenide | Circuits | Epitaxy | Vapor phases | Gallium indium phosphide | Vapors | Hydrides | Indium | Vapor phase epitaxy | Photovoltaic cells | Efficiency | Kinetics | Epitaxial growth | Deposition | Arsenides | MATERIALS SCIENCE | solar cells | SOLAR ENERGY | electronic devices
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 27 - 33
Epitaxial -Ga2O3 layers have been grown on -Ga2O3 (100) substrates using metal-organic vapor phase epitaxy. Trimethylgallium and pure oxygen or water were used... 
transparent semiconducting oxides | metal‐organic vapor phase epitaxy | structure | thin films | metal-organic vapor phase epitaxy | SURFACE-MORPHOLOGY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | Ga2O3 | ADSORPTION | GAAS | HYDROGEN | SINGLE-CRYSTAL | OXIDE THIN-FILMS
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 06/2010, Volume 25, Issue 6, pp. 065009 - 065009
Journal Article
Nano Letters, ISSN 1530-6984, 07/2017, Volume 17, Issue 7, pp. 4075 - 4082
We report on the first Au-catalyzed growth of CdTe nanowires by metalorganic vapor phase epitaxy. The nanowires were obtained by a separate precursors flow... 
cathodoluminescence | CdTe nanowires | VLS growth modeling | Au-catalyzed growth | metalorganic vapor phase epitaxy | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | NANOSTRUCTURES | CHEMISTRY, MULTIDISCIPLINARY | EVOLUTION | GROWTH | STRAIN
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 212 - 215
This paper deals with technological development and investigation of the high temperature vapor phase epitaxy (HTVPE) for the growth of GaN films. A novel Ga... 
A1. Impurities | A3. Vapor phase epitaxy | B1. Nitrides | B2. Semiconducting III-V materials | Semiconducting III-V materials | Nitrides | Vapor phase epitaxy | PHYSICS, APPLIED | BORON | Impurities | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | CRYSTALS | CRYSTALLOGRAPHY | Gas fields | Liquors | Epitaxy | Optical properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2019, Volume 126, Issue 8
The incorporation of dilute amounts of Bi into the host lattice of a III/V semiconductor has a strong influence on its electronic properties. The bandgap is... 
Red shift | Incorporation | Gallium | Composition | Vapor phases | Metalorganic vapor phase epitaxy | Trimethylindium | Photoluminescence | Indium | Substrates | Vapor phase epitaxy | Energy gap | Bismuth | Epitaxial growth | Group III-V semiconductors | Augers
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2019, Volume 115, Issue 9
We demonstrate that Pd nanoparticle/single-walled carbon nanotubes (Pd-SWCNTs) can be used to improve the quality of α-Ga2O3 crystals using halide vapor phase... 
Crystal growth | Nanoparticles | Buffer layers | Gallium oxides | Vapor phase epitaxy | Vapor phases | Crystals | Epitaxial growth | Single wall carbon nanotubes | Silicon dioxide | Dislocations | System effectiveness
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, p. 212
This paper deals with technological development and investigation of the high temperature vapor phase epitaxy (HTVPE) for the growth of GaN films. A novel Ga... 
Temperature distribution | Growth rate | Evaporation | Substrates | Studies | Boron | Vapor phase epitaxy | Gas flow | Sapphire | Optical properties | Silicon | Epitaxial growth | Deposition
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 06/2019, Volume 58, Issue SC, p. SC1038
The vapor-solid phase equilibrium and the solid composition versus input group-III ratio relationship for the metalorganic vapor phase epitaxy of InGaN are... 
PHYSICS, APPLIED | GAN | THERMODYNAMIC ANALYSIS | SOLID-SOLUTIONS | MOVPE GROWTH | SEPARATION | REGION | Vapor phase epitaxy | Composition | Surface kinetics | Indium gallium nitrides | Epitaxy | Vapor phases | Metalorganic vapor phase epitaxy | Phase equilibria | Miscibility | Critical temperature | Equilibrium | Solid phases
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2019, Volume 125, Issue 19
Homoepitaxial β-(In,Ga)2O3 thin films were grown on (100) β-Ga2O3 substrates by metal organic vapor phase epitaxy using triethylgallium (TEGa) and... 
Atomic force microscopy | Cubic lattice | Lattice theory | Vapor phases | X-ray diffraction | Surface roughness | Indium | Substrates | Thin films | Gallium oxides | Vapor phase epitaxy | Transmission electron microscopy | Microscopy | Flow velocity | Epitaxial growth | Indium oxides | Deposition
Journal Article
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