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Journal of Applied Physics, ISSN 0021-8979, 09/2003, Volume 94, Issue 5, pp. 2779 - 2808
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable. There have been significant improvements in the growth of... 
THIN-FILMS | VAPOR-PHASE EPITAXY | SINGLE-CRYSTAL FILMS | LOW-TEMPERATURE GROWTH | PHYSICS, APPLIED | NUCLEATED 00.1 SAPPHIRE | GROUP-III NITRIDES | PULSED-LASER DEPOSITION | MOLECULAR-BEAM EPITAXY | FUNDAMENTAL-BAND GAP | X-RAY-SCATTERING | Molecular beams | Research | Nitrogen | Indium | Epitaxy | Electric properties
Journal Article
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 27 - 33
Epitaxial -Ga2O3 layers have been grown on -Ga2O3 (100) substrates using metal-organic vapor phase epitaxy. Trimethylgallium and pure oxygen or water were used... 
transparent semiconducting oxides | metal‐organic vapor phase epitaxy | structure | thin films | metal-organic vapor phase epitaxy | SURFACE-MORPHOLOGY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | Ga2O3 | ADSORPTION | GAAS | HYDROGEN | SINGLE-CRYSTAL | OXIDE THIN-FILMS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2015, Volume 419, pp. 64 - 68
This paper reports phase separation in thick (~1 μm) MOVPE In Ga N ( =0.2–0.4) films grown by MOVPE at 570–750 °C on AlN/Si(111), α-Al O (0001) and GaN/α-Al O... 
A1. Phase separation | A3. Metalorganic vapor phase epitaxy | B2. Nitrides | Nitrides | PHYSICS, APPLIED | INGAN LAYERS | Phase separation | MATERIALS SCIENCE, MULTIDISCIPLINARY | Metalorganic vapor phase epitaxy | SURFACE | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 467, pp. 61 - 64
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 19, pp. 2625 - 2630
We have succeeded in effectively stopping the propagation of basal stacking faults in (1 1 −2 2) semipolar GaN films on sapphire using an original epitaxial... 
A3. Epitaxial lateral overgrowth | A1 .Basal stacking faults | A3. MOVPE | B2. Semipolar GaN | VAPOR-PHASE EPITAXY | OPTICAL ANISOTROPY | FIELDS | Epitaxial lateral overgrowth | FILMS | OVERGROWTH | Semipolar GaN | CRYSTALLOGRAPHY | MOVPE | Basal stacking faults | POLARIZATION | WELLS | Anisotropy | Epitaxy | Liquors
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2016, Volume 120, Issue 22, p. 225308
We study the homoepitaxial growth of β-Ga2O3 (100) grown by metal-organic vapour phase as dependent on miscut-angle vs. the c direction. Atomic force... 
VAPOR-PHASE EPITAXY | SUBMONOLAYER EPITAXY | SINGLE-CRYSTALS | PHYSICS, APPLIED
Journal Article