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Applied Physics Letters, ISSN 0003-6951, 01/2010, Volume 96, Issue 2, pp. 021908 - 021908-3
We use density functional theory calculations with the HSE06 hybrid exchange-correlation functional to investigate InGaN alloys and accurately determine band... 
OFFSETS | gallium compounds | valence bands | PHYSICS, APPLIED | energy gap | indium compounds | INN | PARAMETERS | exchange interactions (electron) | density functional theory | GAP | INXGA1-XN ALLOYS | SURFACES
Journal Article
Advanced Materials, ISSN 0935-9648, 12/2012, Volume 24, Issue 46, pp. 6125 - 6135
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2013, Volume 103, Issue 26, p. 262109
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2014, Volume 104, Issue 19, p. 192104
The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8+/-0.2 eV measured for Al2O3, the... 
PHYSICS, APPLIED | FILMS | BORDER TRAPS | GROWTH | DEVICES | BETA-GA2O3 SINGLE-CRYSTALS | EDGE | Conduction bands | Electrical properties | Valence band | Hysteresis loops | Offsets | Aluminum oxide | Metal oxides | Gallium oxides | Alignment | Organic light emitting diodes | Heterojunctions | X ray photoelectron spectroscopy | X ray spectra | Electrons
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2013, Volume 114, Issue 17, p. 173503
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 07/2007, Volume 91, Issue 5, p. 51909
The optical properties of GaBixAs1-x(0.04 < x < 0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys... 
GAAS1-XBIX | PHYSICS, APPLIED | TEMPERATURE-DEPENDENCE | SPECTROSCOPY | GROWTH | GAP | 36 | MOLECULAR BEAM EPITAXY | ALLOYS | OPTICAL PROPERTIES | ATOMS | VALENCE
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 02/2018, Volume 530, pp. 208 - 214
We have proposed and validated an ansatz as effective potential for confining electron/hole within a spherical quantum dot in order to understand quantum... 
Quantum confinement | Effective mass approximation | Band gap | Effective potential model | Spherical quantum dot | PHYSICS, CONDENSED MATTER | KLEIN-GORDON EQUATION | SIZE | NANOCRYSTALS | HYDROGENIC-DONOR | CDS | NONLINEAR-OPTICAL PROPERTIES | L-STATE SOLUTIONS | ABSORPTION | VALENCE | ELECTRONIC-STRUCTURE | Physics - Mesoscale and Nanoscale Physics
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2008, Volume 78, Issue 8
Valence- and conduction-band edges of ultrathin oxides (SiO2, HfO2, Hf0.7Si0.3O2, ZrO2, and Al2O3) grown on a silicon substrate have been measured using... 
THIN-FILMS | GATE STACK | HFO2 | PHYSICS, CONDENSED MATTER | INVERSE-PHOTOEMISSION | INTERFACE | ALIGNMENT | DIELECTRICS | RAY PHOTOELECTRON-SPECTROSCOPY | VALENCE | ELECTRONIC-STRUCTURE
Journal Article
Surface and Coatings Technology, ISSN 0257-8972, 10/2016, Volume 303, pp. 125 - 130
The Pd[sbnd]Zr alloy thin films were prepared onto oxidised Si(100) substrates in the temperature range of 295 K up to 700 K using computer-controlled UHV... 
XPS valence band | Nanocrystalline thin films | Ab initio calculations | PHYSICS, APPLIED | SORPTION | MEMBRANES | CLUSTERS | SURFACE | NI | HYDROGEN SEPARATION | MATERIALS SCIENCE, COATINGS & FILMS | ELECTRONIC-STRUCTURE | POLYCRYSTALLINE
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 01/2010, Volume 107, Issue 1
We have investigated the band structure of tensile-strained germanium using a 30 band k center dot p formalism. This multiband formalism allows to... 
p calculations | tensile strength | valence bands | PHYSICS, APPLIED | energy gap | SEMICONDUCTORS | effective mass | SILICON | carrier density | electronic density of states | germanium | MODEL | elemental semiconductors | optical constants | TRANSPORT | DEFORMATION POTENTIALS | ALLOYS | ABSORPTION | conduction bands | TECHNOLOGY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2016, Volume 119, Issue 4, p. 45705
In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum... 
IMPACT | VOLTAGE | PHYSICS, APPLIED | QUANTUM CONFINEMENT | FET | LINE | DISTANCE | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | ELECTRONS | HOLES | POTENTIALS | SIMULATION | LAYERS | FIELD EFFECT TRANSISTORS | SEMICLASSICAL APPROXIMATION | CONFINEMENT | TUNNEL EFFECT | THICKNESS | VALENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2019, Volume 114, Issue 24
The electrostatic potential of p+-n+ junctions, as in Esaki (tunnel) diodes, originates from the Coulomb potentials of ionized dopants in the depletion-layer,... 
Conduction bands | Depletion | Numerical analysis | Dopants | Tunnel diodes | Organic light emitting diodes | Variations | Transport | Valence band
Journal Article
Vacuum, ISSN 0042-207X, 08/2017, Volume 142, pp. 52 - 57
X-Ray Photoelectron Spectroscopy was used to determine the valence band offset at Al O /β-Ga O heterointerfaces. The Al O was deposited either by Atomic Layer... 
OFFSETS | PHYSICS, APPLIED | VALENCE-BAND | MATERIALS SCIENCE, MULTIDISCIPLINARY | POWER | MOVPE | LAYERS
Journal Article