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Crystal Research and Technology, ISSN 0232-1300, 08/2018, Volume 53, Issue 8, pp. 1800042 - n/a
The study of GaN morphology and structure modification due to the variation of the nitridation temperature are reported... 
CVD | GaN wurtzite structure | GaN zinc‐blende structure | nitridation | GaN(1−x)Asx | GaN | GaN zinc-blende structure | GaN(1-x)Asx | SAPPHIRE | PHOTOLUMINESCENCE | FILMS | AIN | CRYSTALLOGRAPHY | GAAS
Journal Article
Applied physics letters, ISSN 1077-3118, 2010, Volume 96, Issue 23, pp. 231912 - 231912-3
Nonpolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs) show great promise. However, long wavelength emitters... 
PHYSICS, APPLIED | A-PLANE | DIODES | NITRIDE | NONPOLAR | WURTZITE
Journal Article
Journal Article
Journal of physics. Condensed matter, ISSN 1361-648X, 2002, Volume 14, Issue 13, pp. 3399 - 3434
...(In)GaN/GaN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heterointerfaces... 
THIN-FILMS | PHYSICS, CONDENSED MATTER | ALGAN/GAN HEMTS | INGAN | PIEZOELECTRIC POLARIZATION | WURTZITE GAN | ALUMINUM NITRIDE | INDUCED CHARGE | 2-DIMENSIONAL ELECTRON GASES | BAND-GAP | POLARITY DETERMINATION
Journal Article
physica status solidi (b), ISSN 0370-1972, 09/2014, Volume 251, Issue 9, pp. 1850 - 1860
...‐temperature ferromagnetism. We review the electron spin dynamics in bulk GaN. Time‐resolved magneto‐optical studies of both the wurtzite and the cubic phase of GaN show the dominance of Dyakonov... 
nitride semiconductors | ROOM-TEMPERATURE | THRESHOLD REDUCTION | PHYSICS, CONDENSED MATTER | GaN | SEMICONDUCTORS | spin relaxation | FERROMAGNETISM | RELAXATION | COLOSSAL MAGNETIC-MOMENT | wurtzite structure | cubic GaN | Ferromagnetism | Liquors | Spin dynamics | Wurtzite | Semiconductors | Dynamics | Gallium nitrides | Localization | Position (location) | Electron spin
Journal Article
Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, ISSN 1793-6640, 2019, Volume 33, Issue 30, p. 1950367
Based on the principle of density matrix and the finite element method, the interband optical absorption between the electron and hole has been investigated in... 
optical property | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PERFORMANCE | built-in electric field | Core-shell quantum dot | PHYSICS, MATHEMATICAL | ternary mixed crystal effect | Electric fields | Optical properties
Journal Article
Nano Letters, ISSN 1530-6984, 05/2012, Volume 12, Issue 5, pp. 2199 - 2204
Journal Article
Scientific Reports, ISSN 2045-2322, 2014, Volume 4, Issue 1, p. 6322
Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ... 
OXYGEN | HYDROGEN | EPITAXY | CARBON | BEHAVIOR | MULTIDISCIPLINARY SCIENCES | WURTZITE GAN | LIGHT-EMITTING DIODE | ALGAN | Polarization | Mathematical models | Organic chemicals | Impurities | Chemical vapor deposition | Vapors
Journal Article
Physica status solidi. A, Applications and materials science, ISSN 1862-6300, 2018, Volume 215, Issue 19, pp. 1800218 - n/a
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 11/2015, Volume 650, pp. 671 - 675
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2014, Volume 105, Issue 20, p. 202105
The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model... 
PHYSICS, APPLIED | FILMS | TEMPERATURE-DEPENDENCE | WURTZITE GAN | GALLIUM NITRIDE | CRYSTALS | POWER | OXYGEN | PHONONS | STRAINS | MAGNESIUM | OPTOELECTRONIC DEVICES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | DOPED MATERIALS | IMPURITIES | THERMAL CONDUCTIVITY | GALLIUM NITRIDES
Journal Article
physica status solidi (b), ISSN 0370-1972, 05/2018, Volume 255, Issue 5, pp. 1700515 - n/a
The wurtzite structure of GaN determines its anisotropic mechanical properties, which is significant in the processes of material preparation and application... 
nanoindentation | fracture toughness | self‐separation | GaN | anisotropic mechanical properties | self-separation | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | MECHANISM | CRACKING | INDENTATION | TRANSISTORS | FILMS | GROWTH | HARDNESS | SEPARATION | CRYSTAL GALLIUM NITRIDE | Anisotropy | Liquors
Journal Article
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 05/2018, Volume 117, pp. 235 - 240
...-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β... 
Ammonification | Nanorods | GaN/β-Ga2O3 | Wurtzite GaN | β-Ga2O3 | β-Ga | GaN/β-Ga | O | PHYSICS, CONDENSED MATTER | CHEMICAL-VAPOR-DEPOSITION | GALLIUM NITRIDE NANOWIRES | DISPERSION | RAMAN-SCATTERING | SINGLE-CRYSTAL | FILMS | GROWTH | HEXAGONAL GAN | GaN/beta-Ga2O3 | beta-Ga2O3
Journal Article