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1. Photoluminescence spectra of the Mn^sup 2+^d-d multiplets transitions of zinc-blende MnTe epitaxial films: laser and deuterium lamp excitation study
by Xuanting Zhu and Qin Lian and Pengzhan Zhang and Wei Bai and Kai Tang and Liangqing Zhu and Jing Yang and Yuanyuan Zhang and Xiaodong Tang and Junhao Chu
Optics Letters, ISSN 0146-9592, 11/2018, Volume 43, Issue 22, p. 5547
The luminescences of zinc-blende MnTe epitaxial films are respectively excited by a laser and deuterium lamp to study Mn2+d-d multiplets transitions. Besides... 
Deuterium | Zincblende | Photoluminescence
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2. Full Text Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
by Signorello, G and Lörtscher, E and Khomyakov, P.A and Karg, S and Dheeraj, D.L and Gotsmann, B and Weman, H and Riel, H
Nature Communications, ISSN 2041-1723, 04/2014, Volume 5, Issue 1, p. 3655
Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less... 
LIGHT-EMISSION | ZINCBLENDE | MULTIDISCIPLINARY SCIENCES
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3. Full Text Ferromagnetism in tetrahedrally coordinated compounds of I/II-V elements: Ab initio calculations
by Sieberer, M and Redinger, J and Khmelevskyi, S and Mohn, P
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2006, Volume 73, Issue 2
On the basis of ab initio calculations employing density functional theory (DFT) we investigate half metallic ferromagnetism in zinc-blende and wurtzite... 
PHYSICS, CONDENSED MATTER | ZINCBLENDE STRUCTURE
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4. Full Text Quenching of the E-2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast
by Ramsteiner, M and Brandt, O and Kusch, P and Breuer, S and Reich, S and Geelhaar, L
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 07/2013, Volume 103, Issue 4
We investigate the Raman intensity of E-2(H) phonons in wurtzite GaAs nanowire ensembles as well as single nanowires as a function of excitation wavelength.... 
ZINCBLENDE | PHYSICS, APPLIED | PHOTOLUMINESCENCE
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5. Full Text Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy
by Panda, Jaya Kumar and Roy, Anushree and Gemmi, Mauro and Husanu, Elena and Li, Ang and Ercolani, Daniele and Sorba, Lucia
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 2, p. 23108
Resonance Raman measurements are carried out on defect-free wurtzite GaP nanowires over the excitation energy range between 2.19 and 2.71 eV. Resonances of the... 
ZINCBLENDE | PHYSICS, APPLIED | GALLIUM-PHOSPHIDE
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6. Oxygen vibrational modes in ZnS1−xOx alloys
by Huso Jesse and Ritter Jacob R and Thapa Dinesh and Yu Kin Man and Bergman Leah and McCluskey Matthew D
Journal of Applied Physics, ISSN 0021-8979, 04/2018, Volume 123, Issue 16
ZnS1−xOx alloy films were studied via resonant Raman spectroscopy. Films with a low oxygen content exhibit ZnS longitudinal optical modes and additional modes... 
Zincblende | Wurtzite | Dependence | Raman spectroscopy | Oxygen content
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7. Full Text Cherenkov-phase-matched nonlinear optical detection and generation of terahertz radiation via GaAs with metal-coating
by Delos Santos, Ramon and Ozawa, Shinpei and Mag-Usara, Valynn and Azuma, Syougo and Tuico, Anthony and Copa, Vernalyn and Salvador, Arnel and Yamamoto, Kohji and Somintac, Armando and Kurihara, Kazuyoshi and Kitahara, Hideaki and Tani, Masahiko and Estacio, Elmer
Optics Express, ISSN 1094-4087, 10/2016, Volume 24, Issue 22, pp. 24980 - 24988
Terahertz (THz) wave detection and emission via Cherenkov-phase-matched nonlinear optical effects at 1.55-mu m optical wavelength were demonstrated using a... 
LITHIUM-NIOBATE CRYSTAL | ZINCBLENDE | OPTICS | PULSES
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8. Full Text Stability, electronic and vibrational properties of GaA1N wurtzoid molecules and nanocrystals: A DFT study
by Abdulsattar, MA and Hussein, MT and Mahmood, TH
VACUUM, ISSN 0042-207X, 07/2018, Volume 153, pp. 17 - 23
Electronic structure and vibrational characteristics of GaAlN wurtzoids at the molecular-nanoscale limit are investigated. The investigated properties include... 
Zincblende | ZINCBLENDE GAN | PHYSICS, APPLIED | Nanocrystals | Wurtzite | ALN | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | AIGaN
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9. Full Text Long-Lived Hot Carriers in III–V Nanowires
by Tedeschi, D and De Luca, M and Fonseka, H. A and Gao, Q and Mura, F and Tan, H. H and Rubini, S and Martelli, F and Jagadish, C and Capizzi, M and Polimeni, A
Nano Letters, ISSN 1530-6984, 05/2016, Volume 16, Issue 5, pp. 3085 - 3093
Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down... 
InP and GaAs nanowires | zincblende | wurtzite | photoluminescence | hot carriers
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10. Full Text A tool for automatic recognition of [110] tilt grain boundaries in zincblende‐type crystals
by Kozak, Roksolana and Kurdzesau, Fiodar and Prieto, Ivan and Skibitzki, Oliver and Schroeder, Thomas and Arroyo Rojas Dasilva, Yadira and Erni, Rolf and von Känel, Hans and Rossell, Marta D
Journal of Applied Crystallography, ISSN 1600-5767, 10/2017, Volume 50, Issue 5, pp. 1299 - 1306
The local atomic structure of [110] tilt grain boundaries (GBs) formed in ∼100 nm‐sized GaAs nanocrystals, which crystallize in the non‐centrosymmetric... 
face‐centred cubic zincblende nanomaterials | transformation matrices | grain/twin boundary | scanning transmission electron microscopy | GaAs | face-centred cubic zincblende nanomaterials | ROTATION | DISLOCATIONS | SEMICONDUCTORS | SILICON | ELECTRON-MICROSCOPY | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | EPITAXY | CUBIC-CRYSTALS | DIFFRACTION | Grain boundaries | Epitaxy | Transformation | Gallium arsenide | Lattices | Crystals | Boundaries | Electron microscopy | Intersections | Crystallography | Zincblende | Vapor phase epitaxy | Nanocrystals | Transmission electron microscopy | Algorithms | Misalignment | Face centered cubic lattice | Epitaxial growth | Atomic structure | Scanning transmission electron microscopy | Three dimensional models
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11. RKKY interaction in Mn-doped 4 × 4 Luttinger systems
by Verma Sonu and Kundu Arijit and Ghosh Tarun Kanti
Journal of Applied Physics, ISSN 0021-8979, 06/2019, Volume 125, Issue 23
We consider Mn-doped bulk zinc-blende semiconductors described by the 4 × 4 Luttinger Hamiltonian. In these semiconductors, the Mn atom acts as an acceptor... 
Zincblende | Semiconductors | Mathematical analysis | Ising model | Magnetic semiconductors
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12. Full Text Theoretical study on interfacial impact ionization in AlN/GaN periodically stacked structure
by Zheng, Jiyuan and Wang, Lai and Wu, Xingzhao and Hao, Zhibiao and Sun, Changzheng and Xiong, Bing and Luo, Yi and Han, Yanjun and Wang, Jian and Li, Hongtao and Li, Mo and Kang, Jianbin and Li, Qian
Applied Physics Express, ISSN 1882-0778, 07/2017, Volume 10, Issue 7, p. 71002
A theoretical study on interfacial ionization in the AlN/GaN periodically stacked structure (PSS) avalanche photodiode (APD) has been carried out to explain... 
AVALANCHE | BULK ZINCBLENDE | PHYSICS, APPLIED | GAN
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13. Bandgap of cubic ZnS1-xOx from optical transmission spectroscopy
by Bergman Leah and McCluskey Matthew D
Journal of Applied Physics, ISSN 0021-8979, 02/2019, Volume 125, Issue 7
ZnS1-xOx is a highly mismatched semiconductor alloy with potential light-emitting and solar-cell applications. In this work, optical transmission spectroscopy... 
Spectroscopy | Zincblende | Energy gap | Wurtzite | Spectrum analysis | Light emitting
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14. A theoretical investigation of the glide dislocations in the sphalerite ZnS
by Huang Lili and Wang Shaofeng
Journal of Applied Physics, ISSN 0021-8979, 11/2018, Volume 124, Issue 17
The 90° and 30° partial glide dislocations in ZnS are investigated theoretically in the framework of the fully discrete Peierls model and first-principles... 
Zinc sulfides | Zincblende | First principles | Migration | Barriers | Glide | Dislocations
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15. Full Text Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence
by Spirkoska, D and Efros, Al. L and Lambrecht, W.R.L and Cheiwchanchamnangij, T and Fontcuberta I Morral, A and Abstreiter, G
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 01/2012, Volume 85, Issue 4
We conducted temperature-dependent measurements of the photoluminescence (PL) polarization on GaAs nanowires (NWs) with polytypic zinc-blende/wurtzite... 
HOLES | PHYSICS, CONDENSED MATTER | ZINCBLENDE | SUPERLATTICES | HETEROSTRUCTURES | WURTZITE
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16. Full Text Second-order nonlinear optical susceptibilities of AIIBVI and AIIIBV semiconductors
by Kumar, V and Sinha, Anita and Singh, B.P and Chandra, S
Physics Letters A, ISSN 0375-9601, 10/2016, Volume 380, Issue 43, pp. 3630 - 3633
The second-order nonlinear optical (NLO) susceptibilities of A B and A B groups of semiconductors with zincblende (ZB) structure have been studied. Two... 
[formula omitted] of zincblende binaries | Nonlinear materials | Static SHG coefficients | AIIBVI and AIIIBV semiconductors | and A | of zincblende binaries | semiconductors
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17. Full Text Band structure and fundamental optical transitions in wurtzite AlN
by Li, J and Nam, K.B and Nakarmi, M.L and Lin, J.Y and Jiang, H.X and Carrier, Pierre and Wei, Su-Huai
Applied Physics Letters, ISSN 0003-6951, 12/2003, Volume 83, Issue 25, pp. 5163 - 5165
With a recently developed unique deep ultraviolet picoseconds time-resolved photoluminescence (PL) spectroscopy system and improved growth technique, we are... 
VAPOR-PHASE EPITAXY | ZINCBLENDE | PHYSICS, APPLIED | EDGE PHOTOLUMINESCENCE | EPILAYERS | GAN
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18. Weakly strained highly mismatched BxIn1-xBVyAs1-y (BV = Sb, Bi) alloys
by Elyukhin Vyacheslav A
Journal of Applied Physics, ISSN 0021-8979, 04/2018, Volume 123, Issue 16
Thermodynamically favorable 4B10BV (BV = Sb, Bi) clustering, reducing the internal strain energy, is presented in highly mismatched InAs-rich BxIn1-xBVyAs1-y... 
Zincblende | Boron | Enthalpy | Alloys | Bismuth | Antimony | Elastic properties | Clustering
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19. Full Text On the Symmetry and Structure of Cubic Semiconductor Surfaces
by Jenkins, Stephen John
ISSN 0743-7463, 2017
A systematic stereographic approach to the description of surface symmetry and structure, applied previously to face-centred cubic, body-centred cubic and... 
zincblende | diamond | chirality | symmetry | stereograms | structure
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20. Full Text Twinning Superlattice Formation in GaAs Nanowires
by Burgess, Tim and Breuer, Steffen and Caroff, Philippe and Wong-Leung, Jennifer and Gao, Qiang and Hoe Tan, Hark and Jagadish, Chennupati
ACS Nano, ISSN 1936-0851, 09/2013, Volume 7, Issue 9, pp. 8105 - 8114
Semiconductor nanowires have proven a versatile platform for the realization of novel structures unachievable by traditional planar epitaxy techniques. Among... 
zincblende | gallium arsenide | superlattice | twin planes | crystal structure | III-V semiconductors | nanowire | ELECTRONIC-PROPERTIES | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ZINCBLENDE-TYPE SEMICONDUCTORS | SILICON NANOWIRES | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | TUNNEL-DIODES | BEAM EPITAXY | ZNSE NANOWIRES | III-V NANOWIRES | PLANE SUPERLATTICES | GOLD NANOWIRES | Gallium arsenides | Planes | Semiconductors | Gallium arsenide | Superlattices | Electronics | Formations | Twinning | Nanowires
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