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Journal of Crystal Growth, ISSN 0022-0248, 11/2017, Volume 477, pp. 197 - 200
Journal Article
International Journal of Mass Spectrometry, ISSN 1387-3806, 02/2015, Volume 377, Issue 1, pp. 179 - 187
Journal Article
Physical chemistry chemical physics : PCCP, ISSN 1463-9076, 11/2015, Volume 17, Issue 41, pp. 27473 - 27480
...) frozen at 120 K is bombarded by high energy electrons, and the desorbing positive ions are analyzed by time-of-flight mass spectrometry (TOF-MS... 
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 2015, Volume 17, Issue 41, pp. 27473 - 27480
...) frozen at 120 K is bombarded by high energy electrons, and the desorbing positive ions are analyzed by time-of-flight mass spectrometry (TOF-MS... 
CONDENSED ACETONITRILE | GRAIN CHEMISTRY | POSITIVE-IONS | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | INTERSTELLAR-MEDIUM | MOLECULE CHEMISTRY | METHYL CYANIDE | MASSIVE PROTOSTARS | SAGITTARIUS B2(N) | WATER | SURFACES
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2016, Volume 452, pp. 158 - 161
Journal Article
International Journal of Mass Spectrometry, ISSN 1387-3806, 12/2015, Volume 393, pp. 1 - 8
•The intensity of AAAA fragment from b6 ions (PXAAAA where X=A, F, E, W and H) is higher than PA, PF, and PE fragments... 
Proline | Proton affinity | Diketopiperazine | Oxazolone | Quantum calculation | b2+ ions
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2014, Volume 401, pp. 640 - 643
Journal Article
Journal of the American Society for Mass Spectrometry, ISSN 1044-0305, 07/2017, Volume 28, Issue 7, pp. 1482 - 1488
Infrared multiple-photon dissociation (IRMPD) action spectroscopy was performed on the b fragment ion from the protonated PPG tripeptide... 
Peptide fragments | b2 ions | IRMPD spectroscopy
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2016, Volume 454, pp. 111 - 113
AlN thin films were grown on Al2O3 (0001) by MBE using NH3-clusters ionized with the energy of 4–7eV/molecule at 960°C. The a-axis is shrunken and the c-axis... 
A3. Molecular beam epitaxy | B1. Nitrides | A1. X-ray diffraction | B2. Semiconducting aluminum compounds | Semiconducting aluminum compounds | Nitrides | SAPPHIRE | PHYSICS, APPLIED | GAN | HETEROSTRUCTURE | MATERIALS SCIENCE, MULTIDISCIPLINARY | X-ray diffraction | Molecular beam epitaxy | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2016, Volume 436, pp. 12 - 15
GaN thin films were grown on Al2O3 (0001) by MBE using NH3-clusters either ionized with the energy of 4–7eV/molecule (ionized Cluster Beam, i-CB) or un-ionized... 
B1. GaN | A3. Molecular beam epitaxy | B1. Nitrides | A1. X-ray diffraction | B2. Semiconducting gallium compounds | BEAM | Nitrides | EPITAXY | PHYSICS, APPLIED | GaN | HETEROSTRUCTURE | Semiconducting gallium compounds | MATERIALS SCIENCE, MULTIDISCIPLINARY | X-ray diffraction | Molecular beam epitaxy | CRYSTALLOGRAPHY
Journal Article