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Physical Review Letters, ISSN 0031-9007, 03/2015, Volume 114, Issue 11
Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for... 
SURFACE | MAGNETIC-PROPERTIES | PHYSICS, MULTIDISCIPLINARY | SCATTERING | Band structure of solids | Fermi surfaces | Magnetoresistivity | Oscillations | Magnetoresistance | Signatures | Deviation | Three dimensional | Condensed Matter | Physics | Superconductivity | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2016, Volume 37, Issue 6, pp. 739 - 742
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2016, Volume 37, Issue 12, pp. 1625 - 1627
Investigation of gate dielectric conduction properties in organic p-type staggered thin-film transistors is reported by means of direct-current,... 
gate noise | Fluctuations | Organic TFT | Low frequency noise | Logic gates | Capacitance | Dielectrics | Thin film transistors | Noise measurement | low frequency noise measurements | low frequency noise | ULTRATHIN OXIDE MOSFETS | CORRELATED MOBILITY FLUCTUATIONS | LOW-FREQUENCY NOISE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Materials Chemistry C, ISSN 2050-7526, 7/2017, Volume 5, Issue 29, pp. 7123 - 7141
In the past decade, considerable progress has been made in the field of organic electronic devices toward understanding charge transport processes and... 
RANDOM TELEGRAPH NOISE | FIELD-EFFECT MOBILITY | PHYSICS, APPLIED | CORRELATED MOBILITY FLUCTUATIONS | SHOT-NOISE | MATERIALS SCIENCE, MULTIDISCIPLINARY | METAL-OXIDE | CHARGE-TRANSPORT | THIN-FILM TRANSISTORS | LOW-FREQUENCY NOISE | PHOTOSENSING PROPERTIES | 1/F NOISE
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2000, Volume 47, Issue 11, pp. 2146 - 2152
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2018, Volume 124, Issue 11, p. 113902
We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3%–14%) with... 
PHYSICS, APPLIED | Physics - Materials Science
Journal Article
Chaos, Solitons and Fractals: the interdisciplinary journal of Nonlinear Science, and Nonequilibrium and Complex Phenomena, ISSN 0960-0779, 05/2017, Volume 98, pp. 205 - 209
In previous research work, investigators have focused mainly on noise-induced current reversal (CR) in spatially ratchet systems, while less effort has been... 
Current reversal | Correlated noises | Spatially symmetric periodic potential | Additive signal | FLUCTUATION-INDUCED TRANSPORT | PARTICLES | RATCHETS | PHYSICS, MULTIDISCIPLINARY | MOBILITY | DEVICE | KINETIC-MODEL DRIVEN | BROWNIAN MOTORS | PHYSICS, MATHEMATICAL | STEADY-STATE ANALYSIS | MATHEMATICS, INTERDISCIPLINARY APPLICATIONS | MOTION
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2018, Volume 39, Issue 10, pp. 1552 - 1555
In 0.08 Al 0.92 N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (L gd ) are fabricated and characterized by... 
Fluctuations | high-electron mobility transistor (HEMT) | finFET | correlated mobility fluctuation (CMF) | MODFETs | Gallium nitride | low-frequency noise | HEMTs | Logic gates | Wide band gap semiconductors | carrier number fluctuation (CNF) | Aluminum gallium nitride | In₀.₀₈Al₀.₉₂N/GaN
Journal Article
PHYSICAL REVIEW B, ISSN 2469-9950, 06/2017, Volume 95, Issue 24
Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, nonsaturating, linear transverse... 
PHYSICS, CONDENSED MATTER | PHASE | TAP | LINEAR MAGNETORESISTANCE | MOBILITY | WEYL FERMIONS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 03/2007, Volume 75, Issue 11
It is shown, using high-precision numerical simulations, that the mobility edge of the three-dimensional Anderson model depends on the boundary hopping term t... 
CONDUCTANCE | DISORDERED-SYSTEMS | RIGHT FORM | LOCALIZATION | PHYSICS, CONDENSED MATTER | METAL-INSULATOR-TRANSITION | PROBABILITY-DISTRIBUTIONS | STATISTICS | FLUCTUATIONS | SCALING THEORY | NONLINEAR-SIGMA-MODEL
Journal Article
Physics Letters A, ISSN 0375-9601, 02/2011, Volume 375, Issue 6, pp. 1048 - 1052
In this work we study an one-dimensional Anderson model with long-range correlated off-diagonal disorder. We numerically demonstrate the presence of extended... 
Correlated disorder | Bloch-like oscillations | Extended state | LOCALIZATION | METAL-INSULATOR-TRANSITION | PHYSICS, MULTIDISCIPLINARY | MOBILITY EDGE | ANDERSON TRANSITION | DELOCALIZATION | RANDOM-DIMER MODEL | TRANSPORT | SUPERLATTICES | FLUCTUATIONS | ABSENCE | Correlation | Dynamics | Coherence | Disorders | Electronics | Oscillations | Solid state physics | Mathematical models | Absorption spectra
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2013, Volume 103, Issue 23, p. 231601
The voltage-spectral density SV (f) of the 2-dimensional electron gas formed at the interface of LaAlO3/SrTiO3 has been thoroughly investigated. The... 
SURFACE | STATE | TRANSISTORS | PHYSICS, APPLIED | 1/F NOISE | OXIDE HETEROSTRUCTURES | Strontium titanates | Temperature dependence | Variation | Electrons | Electron gas | Carriers | Fluctuation | Bias | Excitation | Density
Journal Article
by Seo, JH and Yoon, YJ and Son, DH and Kim, JG and Lee, JH and Im, KS and Kang, IM
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 10/2018, Volume 39, Issue 10, pp. 1552 - 1555
In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (L-gd) are fabricated and characterized by dc... 
high-electron mobility transistor (HEMT) | finFET | ALGAN/GAN HEMTS | correlated mobility fluctuation (CMF) | carrier number fluctuation (CNF) | 1/F NOISE | In0.08Al0.92N/GaN | FIELD-EFFECT TRANSISTORS | low-frequency noise | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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