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Materials science forum, ISSN 0255-5476, 01/2012, Volume 711, pp. 3 - 10
Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability... 
Nucleation control | Sublimation growth | Supersaturation | Cubic SiC | Defects
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3CSiC/Si) from chemical vapor deposition. We have reached a materials... 
Grain boundaries | MOSFET | Silicon carbide | cubic SiC | sublimation growth | Silicon | Epitaxial growth | Chemical vapor deposition | 3C-SiC | Substrates | epitaxy | Organic chemistry | Sublimation | Polytypes | Inclusions
Conference Proceeding
Materials science forum, ISSN 0255-5476, 01/2013, Volume 740-742, pp. 401 - 404
We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using time-resolved nonlinear... 
Cubic sic | Diffusion coefficient | Carrier lifetime | Compensation | Nonlinear dynamics | Silicon carbide | Impurities | Aluminum | Recovery | Carrier density | Density
Journal Article
Science and Technology of Advanced Materials, ISSN 1468-6996, 12/2008, Volume 9, Issue 4, p. 044204
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity... 
boron-doped SiC | type-II superconductor | hexagonal and cubic SiC | type-I superconductor | Al-doped SiC | KICK-OUT MECHANISM | BORON | DIAMOND | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | DEPENDENCE | TRANSITION | TEMPERATURE | SURFACE | DIFFUSION | TELLURIDE
Journal Article
Materials science forum, ISSN 0255-5476, 03/2011, Volume 679-680, pp. 107 - 110
We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various growth profiles were... 
Heteroepitaxy | Cubic SiC | APCVD | HCDS | HMDS | 3C-SiC
Journal Article
Journal Article
Science and Technology of Advanced Materials, ISSN 1468-6996, 12/2008, Volume 9, Issue 4, p. 044205
The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of... 
boron-doped SiC | hexagonal and cubic SiC | type-I superconductor | DIAMOND | MATERIALS SCIENCE, MULTIDISCIPLINARY | Physics - Superconductivity
Journal Article
Computational Materials Science, ISSN 0927-0256, 2004, Volume 30, Issue 3, pp. 419 - 424
New phonon-assisted defect features are observed using photoluminescence (PL) and Raman scattering spectroscopy on 3C-SiC/Si(1 0 0) films grown by chemical... 
Simulation | Raman scattering | 3C-SiC | Green function | CHEMICAL-VAPOR-DEPOSITION | simulation | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | RAMAN | CUBIC SIC FILMS
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 2008, Volume 202, Issue 9, pp. 1696 - 1703
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 2000, Volume 131, Issue 1, pp. 147 - 152
Journal Article
Materials Science Forum, ISSN 0255-5476, 2015, Volume 821-823, pp. 77 - 80
Conference Proceeding
The Journal of Physical Chemistry C, ISSN 1932-7447, 01/2012, Volume 116, Issue 1, pp. 886 - 892
We investigate molecular sensitization of the nonpolar SiC(110) surface by means of density functional simulations. We focus on aromatic fragments up to a full... 
C: Surfaces, Interfaces, Catalysis | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CUBIC SIC SURFACES | BENZENE | REDUCTION | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
Materials science forum, ISSN 0255-5476, 10/2006, Volume 527-529, Issue 1, pp. 279 - 282
Cross-sectional transmission electron microscopy (TEM) was used to investigate the extended defects in 3C-SiC films deposited on atomically flat 4H-SiC mesas.... 
Cubic-SiC | Defect-free | Mesa | Heteroepitaxy | Relaxation mechanism | 3C-SiC | Step-free surface
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 2003, Volume 169, pp. 624 - 627
We report on the preparation of hydrogenated amorphous silicon carbide (a-SiC:H) film and silicon carbonitride (a-SiCN:H) film on Si (100) substrate by Ar ion... 
Ion beam | a-SiC:H film | a-SiCN:H film | Hexamethyldisilane | Chemical vapor deposition | A-SiC:H film | A-SiCN:H film | THIN-FILMS | hexamethyldisilane | a-SiCN : H film | NITRIDE | MECHANICAL-PROPERTIES | CUBIC SIC FILMS | BAND-GAP | ion beam | PLASMA | chemical vapor deposition | METHYLSILANE | SUBSTRATE | GROWTH | a-SiC : H film | CRYSTALLINE | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Thin Solid Films, ISSN 0040-6090, 2008, Volume 516, Issue 5, pp. 490 - 495
This paper describes at first the present status of solar cell efficiencies prepared by Hot Wire CVD (HW-CVD), and then preparation techniques of... 
Solar cells | Hot-wire deposition | Amorphous materials | Cubic SiC | Microcrystalline materials | Deposition process
Journal Article
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