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Advanced Energy Materials, ISSN 1614-6832, 04/2015, Volume 5, Issue 7, p. n/a
11.6%‐efficiency Cu2ZnSnSe4 (CZTSe) thin‐film solar cells are fabricated via a thermal co‐evaporation method. The CZTSe thin film with improved microstructure... 
photovoltaic devices | solar cells | electro‐optical materials | semiconductors | thin films | electro-optical materials | CHEMISTRY, PHYSICAL | PHYSICS, CONDENSED MATTER | DEFECTS | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | Thin films | Solar cells | Dielectric films | Solar batteries
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 05/2016, Volume 55, Issue 5, p. 5
The results of diffusion length measurements by fitting the collected current dependence on electron beam energy are discussed. It is shown that in GaN... 
BEAM-INDUCED-CURRENT | PHYSICS, APPLIED | EBIC INVESTIGATIONS | DISLOCATION DENSITY | DEFECT
Journal Article
Advanced Materials, ISSN 0935-9648, 03/2014, Volume 26, Issue 12, pp. 1912 - 1917
Journal Article
Ultramicroscopy, ISSN 0304-3991, 02/2019, Volume 197, pp. 23 - 27
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 04/2017, Volume 163, pp. 270 - 276
In this study strong evidence for an illumination-induced change in minority charge carrier diffusion length is given for Cu(In,Ga)Se2 solar cells. After... 
CIGS | TRPL | Minority carrier diffusion length | EBIC | Metastability | Defects
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 04/2016, Volume 49, Issue 19, pp. 19 - 19LT22
Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently... 
SiC | radiation damage | defect diffusion length | PHYSICS, APPLIED | Temperature dependence | Bombardment | Silicon carbide | Diffusion | Radiation damage | Diffusion length | Ion beams | Defects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | MATERIALS SCIENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2011, Volume 99, Issue 24, pp. 243303 - 243303-3
Spectrally resolved photoluminescence quenching (SR-PLQ) is a convenient and accurate method for measuring the exciton diffusion length of organic materials;... 
DEVICES | PHYSICS, APPLIED | SOLAR-CELLS | EFFICIENT | SINGLET
Journal Article
Diamond & Related Materials, ISSN 0925-9635, 04/2012, Volume 24, pp. 6 - 10
Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to... 
Ion implantation | Annealing | Vacancy diffusion | Scattering | PHYSICS, CONDENSED MATTER | DEFECTS | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NITROGEN | DAMAGE | MATERIALS SCIENCE, COATINGS & FILMS | Micrometers | Nanostructure | Damage | Diffusion | Masks | Physics - Materials Science
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 6
We investigate how excitonic processes in rubrene single crystals are affected by a deliberately implanted defect gradient induced by proton irradiation.... 
Single crystals | Crystal defects | Excitons | Proton irradiation | Photoluminescence | Diffusion | Density | Diffusion length | Defects
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 11/2019, Volume 29, Issue 46, pp. 1903936 - n/a
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 04/2013, Volume 25, Issue 16, pp. 162203 - 4
Radiation-generated point defects in solids often experience dynamic annealing-diffusion and interaction processes after the thermalization of collision... 
POINT-DEFECTS | TRAP-LIMITED MIGRATION | ROOM-TEMPERATURE | PHYSICS, CONDENSED MATTER | IMPLANTATION | SEMICONDUCTORS | SILICON | HEAVY-IONS | ELECTRON-IRRADIATION | DOSE-RATE | Beams (radiation) | Annealing | Crystal defects | Condensed matter | Dynamic annealing | Silicon | Diffusion length | Ion beams
Journal Article