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IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 175 - 177
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 995 - 998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits... 
power amplifier | dual MIS | AlGaN/GaN-on-Si | Gallium nitride | Ka-band | Radio frequency | high-k | gate recess | Logic gates | HEMTs | Wide band gap semiconductors | Aluminum gallium nitride | Power generation | MMIC | Integrated circuits | Gallium nitrides | Power amplifiers | MMIC (circuits) | Power efficiency | Aluminum gallium nitrides | Continuous radiation
Journal Article
by Kim, DH and Park, H and Eom, SK and Jeong, JS and Cha, HY and Seo, KS
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 995 - 998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits... 
power amplifier | VOLTAGE | dual MIS | AlGaN/GaN-on-Si | SILICON | Ka-band | ENGINEERING, ELECTRICAL & ELECTRONIC | high-k | POWER-AMPLIFIER | TRANSISTORS | LEAKAGE | gate recess | HEMTS | DEVICES | MMIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 995 - 998
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 175 - 177
To fabricate gate recessed normally-off AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors, we have employed a novel SiNx/HfO2 dual... 
hafnium oxide | Insulators | Dielectrics | Leakage currents | Gallium nitride | plasma enhanced atomic layer deposition (PEALD) | metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) | silicon nitride | GaN | RF-sputtering | Logic gates | Hafnium compounds | Dual gate insulator | Aluminum gallium nitride | Transistors
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 10/2015, Volume 30, Issue 11
We have investigated dual-gate AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Si3N4 as the gate dielectric by... 
dual-gate configuration | power gain | metal-insulator-semiconductor (MIS) | AlGaN/GaN | BREAKDOWN VOLTAGE | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENHANCEMENT | ELECTRON-MOBILITY TRANSISTORS | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, ISSN 1598-1657, 2017, Volume 17, Issue 2, pp. 223 - 229
Journal Article
Journal of Education for Library and Information Science, ISSN 0748-5786, 03/2017, Volume 58, Issue 2, pp. 106 - 111
Journal Article
Interactive Surgery, ISSN 1778-3739, 11/2006, Volume 1, Issue 1, pp. 51 - 55
The authors describe the surgical technique for minimal invasive surgery using a dual mobility total hip prosthesis by posterior external approach and... 
Tripolar | Mini incision | Anatomy | Minimally invasive surgery (MIS) | Dislocation | Surgical Orthopedics | Medicine & Public Health | Orthopedics | Surgery | Traumatic Surgery | Dual mobility | Total hip arthroplasty (THA) | External posterior approach
Journal Article
Journal of Counseling & Development, ISSN 0748-9633, 01/2019, Volume 97, Issue 1, pp. 98 - 104
This article presents findings of a content analysis of the types of ethical violations that led to disciplinary actions (N = 936) across state counseling... 
content analysis | legal issues | counseling ethics | professional issues | ethical issues | PSYCHOLOGY, APPLIED | Continuing education | Ethics | Violations | Misrepresentation | Complaints | Dual relationships | Licensing | Discipline | Counselling | Credentials | Content analysis
Journal Article
Jisuanji Xuebao/Chinese Journal of Computers, ISSN 0254-4164, 02/2012, Volume 35, Issue 2, pp. 218 - 228
Network operators would like high capacity router architectures that can offer guaranteed throughput, scalability and maintain packet ordering. However,... 
Packet mis-sequence | Router architecture | Dual-rotation mapping | Scalability | Load-balanced routers | Traffic flow | Algorithms | Routers | Traffic engineering | Ports | Mapping | Internet | Order disorder
Journal Article
International Journal of Biochemistry and Cell Biology, ISSN 1357-2725, 02/2010, Volume 42, Issue 2, pp. 318 - 328
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 2009, Volume 45, Issue 3, pp. 105 - 116
In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in... 
Transcapacitance and cut-off frequency | T-gate | Drain current | Threshold voltage | Metal–Insulator geometries | Dual gate | Transconductance | InAlAs/InGaAs heterostructures | Metal-Insulator geometries | PHYSICS, CONDENSED MATTER | VOLTAGE | ELECTRON-MOBILITY TRANSISTORS | MECHANISMS | MODFETS | GAAS | CHANNEL | F(T) | GHZ | BREAKDOWN | Usage | Models | Amplifiers (Electronics) | Transistors
Journal Article
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, 12/2018
Conference Proceeding
JOURNAL OF THE ASSOCIATION FOR INFORMATION SYSTEMS, ISSN 1536-9323, 2018, Volume 19, Issue 1, pp. 1 - 22
Journal Article
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