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1. Full Text Synthesis of Semiconducting Functional Materials in Solution: From II‐VI Semiconductor to Inorganic–Organic Hybrid Semiconductor Nanomaterials
by Yao, Wei‐Tang and Yu, Shu‐Hong
Advanced Functional Materials, ISSN 1616-301X, 11/2008, Volume 18, Issue 21, pp. 3357 - 3366
This Feature Article provides a brief overview of the latest development and emerging new synthesis solution strategies for II–VI semiconducting nanomaterials... 
synthesis | inorganic–organic hybrid materials | II‐VI semiconductors | mesostructured materials | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICAL-PROPERTIES | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | ELEMENTAL-DIRECT-REACTION | HIGHLY LUMINESCENT | CDSE NANOCRYSTALS | CHEMISTRY, MULTIDISCIPLINARY | SHAPE CONTROL | SOLVOTHERMAL SYNTHESIS | WURTZITE ZNS | ZNS NANOWIRES | CDE E | STRONG QUANTUM CONFINEMENT
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2. Full Text Synthesis of Carbon Nitride Semiconductors in Sulfur Flux for Water Photoredox Catalysis
by Zhang, Jinshui and Zhang, Mingwen and Zhang, Guigang and Wang, Xinchen
ACS Catalysis, ISSN 2155-5435, 06/2012, Volume 2, Issue 6, pp. 940 - 948
Sulfur-mediated synthesis has been demonstrated as a simple but efficient pathway to control the texture and electronic structure of poly(tris-triazine) based... 
solar energy conversion | sulfur-mediated synthesis | carbon nitride | photocatalysis | elemental sulfur | OXIDATION | PERFORMANCE | CHEMISTRY, PHYSICAL | VISIBLE-LIGHT-DRIVEN | EVOLUTION | PHOTOCATALYTIC ACTIVITY | RENEWABLE ENERGY | HYDROGEN-PRODUCTION | NANOCOMPOSITE | ELECTRONIC-STRUCTURE
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3. Full Text Growth kinetics and crystal structure of semiconductor nanowires
by Dubrovskii, V.G and Sibirev, N.V and Harmand, J.C and Glas, F
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 12/2008, Volume 78, Issue 23
Theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine the growth conditions under which the formation of... 
gallium arsenide | PHYSICS, CONDENSED MATTER | DEPOSITION | solid-state phase transformations | elemental semiconductors | LIQUID-SOLID MECHANISM | semiconductor growth | semiconductor quantum wires | TRANSISTORS | silicon | nanowires | crystal structure | nanotechnology | POLYTYPISM | III-V semiconductors
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4. Full Text Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms
by Peng, H Y and Li, G P and Ye, J Y and Wei, Z P and Zhang, Z and Wang, D D and Xing, G Z and Wu, T
Applied Physics Letters, ISSN 0003-6951, 05/2010, Volume 96, Issue 19, pp. 192113 - 192113-3
We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors,... 
diffusion | PHYSICS, APPLIED | semiconductor-metal boundaries | INSULATOR | NONVOLATILE MEMORY | manganese | electrical conductivity transitions | elemental semiconductors | semiconductor thin films | magnetic thin films | platinum | silicon | II-VI semiconductors | vacancies (crystal) | metal-semiconductor-metal structures | zinc compounds | wide band gap semiconductors | ferromagnetic materials | magnetic semiconductors | electrical resistivity
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5. Full Text Controlled synthesis of semiconductor nanostructures in the liquid phase
by Zhuang, Zhongbin and Peng, Qing and Li, Yadong
Chemical Society Reviews, ISSN 0306-0012, 11/2011, Volume 40, Issue 11, pp. 5492 - 5513
The microstructure (composition, size and shape etc.) of semiconductor nanocrystals determine the electronic density of states of semiconductor nanomaterials... 
LIGHT-EMITTING-DIODES | EXCITED ELECTRONIC STATES | BINARY NANOPARTICLE SUPERLATTICES | MOLECULAR-BEAM EPITAXY | CADMIUM SELENIDE NANOCRYSTALS | SHAPE-CONTROLLED SYNTHESIS | SINGLE-SOURCE PRECURSORS | CORE-SHELL NANOCRYSTALS | ELEMENTAL-DIRECT-REACTION | CDSE QUANTUM DOTS | CHEMISTRY, MULTIDISCIPLINARY
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6. Full Text Bulk and surface properties of ZnTe–ZnS system semiconductors
by Kirovskaya, I A and Mironova, E V and Kosarev, B A and Nor, P E and Bukashkina, T L
Russian Journal of Physical Chemistry A, ISSN 0036-0244, 10/2016, Volume 90, Issue 10, pp. 2029 - 2034
Physicochemical studies of a new ZnTe–ZnS semiconductor system are conducted. It is found that at certain ratios of binary components, substitutional solid... 
Chemistry | laws | Physical Chemistry | structural | elemental composition | active sites | crystal chemical | solid solutions | diamond-like semiconductors | acid–base properties | CHEMISTRY, PHYSICAL | acid-base properties
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7. Full Text Semiconductor nanostructure-based photovoltaic solar cells
by Zhang, Genqiang and Finefrock, Scott and Liang, Daxin and Yadav, Gautam G and Yang, Haoran and Fang, Haiyu and Wu, Yue
Nanoscale, ISSN 2040-3364, 06/2011, Volume 3, Issue 6, pp. 2430 - 2443
Substantial efforts have been devoted to design, synthesize, and integrate various semiconductor nanostructures for photovoltaic (PV) solar cells. In this... 
NEAR-INFRARED LIGHT | PHYSICS, APPLIED | ONE-POT SYNTHESIS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON NANOWIRES | RESONANCE ENERGY-TRANSFER | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | CDTE NANOCRYSTALS | ELEMENTAL SOLVOTHERMAL REACTION | COLLOIDAL QUANTUM DOTS | TRANSPARENT CONDUCTING OXIDE | TITANIUM-OXIDE NANOTUBE | TIO2 NANOTUBE ARRAYS
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8. Full Text Semiconductor saturable absorbers for ultrafast terahertz signals
by Hoffmann, Matthias C and Turchinovich, Dmitry
Applied Physics Letters, ISSN 0003-6951, 04/2010, Volume 96, Issue 15, pp. 151110 - 151110-3
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz (THz) frequency range at room temperature using... 
elemental semiconductors | gallium arsenide | gallium compounds | terahertz waves | PHYSICS, APPLIED | high-speed optical techniques | SPECTROSCOPY | optical saturable absorption | germanium | refractive index | electrical conductivity | III-V semiconductors
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9. Full Text Hydrogen interaction with platinum and palladium metal-insulator-semiconductor devices
by Salomonsson, Anette and Eriksson, Mats and Dannetun, Helen and Institutionen för fysik, kemi och biologi and Tillämpad Fysik and Linköpings universitet and Tekniska högskolan
Journal of Applied Physics, ISSN 0021-8979, 07/2005, Volume 98, Issue 1, pp. 014505 - 014505-10
Hydrogen-sensitive Pd - Si O 2 - Si and Pt - Si O 2 - Si metal-insulator-semiconductor (MIS) devices have been studied in ultrahigh vacuum in the temperature... 
FIELD-EFFECT DEVICES | OXYGEN REACTION | PHYSICS, APPLIED | PT SURFACE | CHEMICAL SENSORS | WATER-FORMING REACTION | ADSORBED OXYGEN | GAS-CHROMATOGRAPHY | ADSORPTION STATES | Atomic force microscopy | Structure | Properties | Platinum | Analysis | adsorption | surface reconstruction | hydrogen | atomic force microscopy | crystal microstructure | elemental semiconductors | platinum | Naturvetenskap | silicon | silicon compounds | gas sensors | palladium | Natural Sciences | MIS devices | heat of adsorption
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10. Full Text Optical properties of anisotropic porous semiconductors
by Ruda, H E and Shik, A
Applied Physics Letters, ISSN 0003-6951, 11/2011, Volume 99, Issue 21, pp. 213111 - 213111-3
Semiconductors with parallel cylindrical pores possess positive birefringence for a single system of pores and negative one-for two mutually perpendicular... 
elemental semiconductors | permittivity | PHYSICS, APPLIED | luminescence | silicon | porous semiconductors | birefringence | absorption coefficients | refractive index
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11. Full Text Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate
by Despeisse, M and Bugnon, G and Feltrin, A and Stueckelberger, M and Cuony, P and Meillaud, F and Billet, A and Ballif, C
Applied Physics Letters, ISSN 0003-6951, 02/2010, Volume 96, Issue 7, pp. 073507 - 073507-3
The deposition of thin-film silicon solar cells on highly textured substrates results in improved light trapping in the cell. However, the growth of silicon... 
elemental semiconductors | semiconductor thin films | semiconductor growth | PHYSICS, APPLIED | silicon | silicon compounds | plasma CVD | amorphous semiconductors | solar cells | semiconductor device reliability
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12. Full Text Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology
by Duan, BX and Huang, YJ and Xing, JY and Yang, YT
MICRO & NANO LETTERS, ISSN 1750-0443, 09/2019, Volume 14, Issue 10, pp. 1092 - 1095
A novel silicon (Si) on silicon carbide (SiC) lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its... 
MOSFET | size 20 | VOLTAGE | deep drain region | TCAD simulation | MATERIALS SCIENCE, MULTIDISCIPLINARY | Si-SiC | Si-SiC LDMOS | semiconductor device breakdown | Si-SiC heterojunction | breakdown voltage | semiconductor heterojunctions | Si lateral double-diffused metal oxide semiconductor | semiconductor device models | double-diffused metal oxide semiconductor field effect transistor | 0 mum | NANOSCIENCE & NANOTECHNOLOGY | high critical electric field | specific on-resistance | elemental semiconductors | interfacial charges | silicon | POWER MOSFET | silicon compounds | LDMOS | wide band gap semiconductors | breakdown point transfer terminal technology | Metal oxides | Design parameters | Silicon carbide | Metal oxide semiconductors | Semiconductor devices | Field effect transistors | Technology transfer | Breakdown | Heterojunctions | Transistors | Electric fields | Curvature
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13. Full Text Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors
by Wei, Te-Yu and Huang, Chi-Te and Hansen, Benjamin J and Lin, Yi-Feng and Chen, Lih-Juann and Lu, Shih-Yuan and Wang, Zhong Lin
Applied Physics Letters, ISSN 0003-6951, 01/2010, Volume 96, Issue 1, pp. 013508 - 013508-3
The Schottky contact based photon detection was demonstrated using CdS (visible light responsive), silicon (indirect n-type oxygen-non-adsorbing), and CuO... 
adsorption | PHYSICS, APPLIED | Schottky barriers | nanosensors | NANOBELTS | SENSOR | cadmium compounds | elemental semiconductors | photodetectors | semiconductor quantum wires | silicon | copper compounds | II-VI semiconductors | nanowires | ULTRAVIOLET PHOTODETECTORS | ZNO NANOWIRE | wide band gap semiconductors | oxygen | semiconductor materials
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14. Full Text Approaches to design inorganic semiconductors while maintaining structural motifs
by Zhang, Xiuwen and Xia, Jianbai
Journal of Semiconductors, ISSN 1674-4926, 07/2018, Volume 39, Issue 7, p. 71002
Ternary semiconductors | Materials design | Elemental substitution
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15. Full Text The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
by Zhu, Di and Xu, Jiuru and Noemaun, Ahmed N and Kim, Jong Kyu and Schubert, E Fred and Crawford, Mary H and Koleske, Daniel D
Applied Physics Letters, ISSN 0003-6951, 02/2009, Volume 94, Issue 8, pp. 081113 - 081113-3
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping... 
gallium compounds | PHYSICS, APPLIED | indium compounds | MODEL | light emitting diodes | semiconductor doping | elemental semiconductors | silicon | TEMPERATURE | GAN | numerical analysis | semiconductor quantum wells | wide band gap semiconductors | III-V semiconductors
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