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Advanced Science, ISSN 2198-3844, 10/2015, Volume 2, Issue 10, pp. 1500140 - n/a
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 12/2017, Volume 9, Issue 49, pp. 43386 - 43392
It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices.... 
Research | patterned sapphire substrate | epitaxial lateral overgrowth | facet-controlled | GaN | MOCVD | sputtered AlN
Journal Article
by He, CG and Zhao, W and Zhang, K and He, LF and Wu, HL and Liu, NY and Zhang, S and Liu, XY and Chen, ZT
ACS APPLIED MATERIALS & INTERFACES, ISSN 1944-8244, 12/2017, Volume 9, Issue 49, pp. 43386 - 43392
It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices.... 
sputtered AIN | BLUE | MATERIALS SCIENCE, MULTIDISCIPLINARY | RELAXATION | NANOSCIENCE & NANOTECHNOLOGY | patterned sapphire substrate | facet-controlled | MOCVD | LIGHT-EMITTING-DIODES | epitaxial lateral overgrowth | REDUCTION | GaN | ZNO NANOWIRE ARRAYS | GROWTH | OPTIMIZATION | NUCLEATION
Journal Article
Advanced Science, ISSN 2198-3844, 10/2015, Volume 2, Issue 10, p. n/a
Several novel strategies have been developed by tailoring nanocrystals (NCs) to improve their catalysis and sensing performances. In article number 1500140, Y.... 
sensing | catalysis | nanocrystals | Cu2O | facet‐controlled
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 09/2007, Volume 46, Issue 9 A, pp. 5782 - 5784
We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a... 
GaN | Hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) | Laser diode | AlGaN | Ultraviolet (UV) | ultraviolet (UV) | laser diode | PHYSICS, APPLIED | LOW-DISLOCATION-DENSITY | OPTICAL GAIN | hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO)
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 08/2007, Volume 46, Issue 8 A, pp. 5128 - 5130
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 04/2001, Volume 40, Issue 4 A, pp. L309 - L312
Journal Article
Materials China, ISSN 1674-3962, 11/2017, Volume 36, Issue 11, pp. 860 - 867
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 2005, Volume 44, Issue 1-7, pp. L24 - L26
We propose here an advanced facet-controlled epitaxial lateral overgrowth (FACELO) technique for obtaining a GaN layer with a low threading dislocation (TD)... 
Selective area growth | Epitaxial lateral overgrowth | Cathodoluminescence | GaN | Facet-controlled epitaxial lateral overgrowth | cathodoluminescence | DENSITY | VAPOR-PHASE EPITAXY | PHYSICS, APPLIED | epitaxial lateral overgrowth | FILMS | LASER-DIODES | FABRICATION | selective area growth | facet-controlled epitaxial lateral overgrowth
Journal Article
by Zhou, HL and Liu, W and Chua, SJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, ISSN 0021-4922, 08/2007, Volume 46, Issue 8A, pp. 5128 - 5130
GaN/AlN superlattice structures along the (112 (2) over bar2) facet were grown on facet-controlled epitaxial lateral overgrown (FACELO) GaN/sapphire templates... 
superlattice | SPONTANEOUS POLARIZATION | PHYSICS, APPLIED | WAVELENGTH RANGE | FIELD | RELAXATION | MU-M | facet-controlled epitaxial lateral overgrown tempalte | MULTIPLE-QUANTUM WELLS | TRANSITION | INFRARED PHOTODETECTOR | GAN | gallium nitride | FABRICATION | aluminum nitride | intersubband transition
Journal Article
電子情報通信学会技術研究報告. ED, 電子デバイス, ISSN 0913-5685, 06/2002, Volume 102, pp. 37 - 40
選択横方向成長(ELO)は貫通転位(TD)密度が低い高品質のGaNエピタキシャル膜を作製する技術として非常に有用である。我々は,選択成長で形成されるファセット形態を制御することにより,転位の伝搬を制御する技術,ファセット制御ELO(facet controlled... 
Journal Article
電子情報通信学会技術研究報告. ED, 電子デバイス, ISSN 0913-5685, 05/2000, Volume 100, pp. 35 - 40
... 
Journal Article
電子情報通信学会技術研究報告. CPM, 電子部品・材料, ISSN 0913-5685, 05/2000, Volume 100, pp. 35 - 40
... 
Journal Article
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, ISSN 0913-5685, 05/2000, Volume 100, pp. 35 - 40
... 
Journal Article
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