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IEEE Electron Device Letters, ISSN 0741-3106, 10/2017, Volume 38, Issue 10, pp. 1445 - 1448
We have demonstrated highly scaled, self-aligned AlGaN/GaN fin-shaped field-effect transistors (FinFETs), which were fabricated using e-beam lithography and a... 
Performance evaluation | high-electron mobility transistor (HEMT) | self-aligned FET | heterojunction | Gallium nitride | AlGaN/GaN | Silicon compounds | Temperature measurement | GaN | Logic gates | FinFETs | fin-shaped field-effect transistor (FinFET) | Aluminum gallium nitride | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3634 - 3638
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2013, Volume 34, Issue 2, pp. 169 - 171
The design and characteristics of a junctionless (JL) bulk FinFET were compared with the silicon-on-insulator (SOI) JL nanowire transistor (JNT) using 3-D... 
3-D simulation | junctionless (JL) | Doping | Logic gates | FinFETs | Semiconductor process modeling | Mathematical model | Substrates | Fin-shaped field-effect transistor (FinFET) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2019, Volume 66, Issue 8, pp. 3492 - 3497
A novel plasma Charge Accumulative Model (pCAM) by calculating time-integrated Fowler-Nordheim (FN) tunneling charges and field of the gate dielectric in... 
Semiconductor device modeling | Fowler–Nordheim (FN) tunneling | fin-shaped field effect transistors (FinFET) | Metals | floating gate (FG) | plasma-induced charges | Logic gates | Tunneling | FinFETs | Ions | Plasmas | Antenna | PHYSICS, APPLIED | RELIABILITY | Fowler-Nordheim (FN) tunneling | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 01/2013, Volume 34, Issue 1, pp. 27 - 29
A single-nanoribbon Al2O3/GaN metal-insulator-semiconductor field-effect transistor (MISFET) has been fabricated. The fabricated device exhibits normally off... 
GaN | nanoribbon | triple gate | PERFORMANCE | metal-insulator-semiconductor field-effect transistor (MISFET) | Fin-shaped field-effect transistor (FinFET) | normally off | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 915 - 920
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2013, Volume 34, Issue 3, pp. 381 - 383
Heavily doped GaN nanochannel fin-shaped field-effect transistors (FinFETs) without heterojunction have been fabricated and characterized for the first time.... 
MOSFET | nanochannel | HEMT | heterojunction | Gallium nitride | Fin-shaped field-effect transistor (FinFET) | 2-D electron gas (2DEG) | subthreshold slope (SS) | GaN | triple-gate | Logic gates | HEMTs | FinFETs | Nanoscale devices | Aluminum gallium nitride | ENGINEERING, ELECTRICAL & ELECTRONIC | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 11/2015, Volume 23, Issue 11, pp. 2748 - 2752
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2012, Volume 59, Issue 8, pp. 2003 - 2010
Journal Article
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