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Microelectronics International, ISSN 1356-5362, 04/2014, Volume 31, Issue 2, pp. 108 - 115
Journal Article
Circuits, Systems, and Signal Processing, ISSN 0278-081X, 6/2013, Volume 32, Issue 3, pp. 993 - 1011
...) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail-to-rail structure which performs with both positive and negative signals... 
Engineering | LC-ladder | Current-mode | Signal, Image and Speech Processing | Electronics and Microelectronics, Instrumentation | Active filter | Circuits and Systems | Fully differential | Floating gate MOS | Electrical Engineering | Current conveyor | VOLTAGE | CCCII | CCII | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit design | Transistors | Conveying machinery | Integrated circuits | Electrical design | Electrical equipment | Electric potential | Conveyors | Circuits | Bias | Floating structures | MOSFETs | Gates (circuits)
Journal Article
電子情報通信学会技術研究報告. CAS, 回路とシステム, ISSN 0913-5685, 01/2012, Volume 111, pp. 63 - 66
多値論理システムの実現に向けて,可変閾値特性をもつFloating Gate(FG)-MOSFETを用いた多値回路の研究を行っているが,FG-MOSFETはFG面積が大きいという問題がある.そこで本研究では,多値回路における基本回路であり,P型とN型のFG-MOSFETで構成されるFG-MOSインバータのFGを共有する... 
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 09/2010, Volume 45, Issue 9, pp. 1781 - 1794
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2012, Volume 59, Issue 8, pp. 2078 - 2084
Journal Article
Sensors & Actuators: B. Chemical, ISSN 0925-4005, 08/2012, Volume 171-172, pp. 110 - 117
.... It is shown here that, using FG-ISFET and Neuron MOS concepts, a second electrical input may be capacitively coupled to their floating gate... 
ISFET | Inverter | Chemical | Neuron MOS | Switch | FG-MOS | Floating gate MOS
Journal Article
Journal Article
IEICE transactions on fundamentals of electronics, communications and computer sciences, ISSN 0916-8508, 12/2003, Volume 86, Issue 12, pp. 3294 - 3296
Journal Article
2019 International Conference on IC Design and Technology (ICICDT), 06/2019, pp. 1 - 3
...) memory cells and 65 nm FG memory cells are investigated. The threshold voltage (V th ) and off-state leakage current (I off... 
SONOS devices | SONOS | floating gate | Nonvolatile memory | Logic gates | Transistors | Total ionizing dose | γ ray | Flash | Flash memories
Conference Proceeding
2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS), 11/2015, pp. 337 - 341
This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential... 
floating-gate technique | low-voltage and low-power circuit | fully differential difference transconductance amplifier | Amplification | CMOS | Electric potential | Semiconductor devices | Circuits | Voltage | Transistors | Transconductance
Conference Proceeding
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 01/2012, Volume 47, Issue 1, pp. 301 - 309
.... The system consists of 20-V organic CMOS digital and analog circuits with a floating gate (FG) for process variation compensation, 100-V organic pMOS rectifiers for generating a 50-Hz clock and 20-V dc power, and an organic LED... 
Voltage measurement | organic LED | large-area electronics | Floating gate (FG) | MOSFETs | Current measurement | pseudo-CMOS | Organic light emitting diodes | Logic gates | mismatch compensation | organic CMOS | Energy efficiency | CMOS integrated circuits | operational amplifier | system-on-a-film (SoF) | ENGINEERING, ELECTRICAL & ELECTRONIC | Meters | CMOS | Compensation | Rectifiers | Measuring instruments | Digital | Devices | Gates
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2006, Volume 53, Issue 6, pp. 3349 - 3355
Every time a heavy ion crosses a programmed Floating Gate (FG) in a nonvolatile memory array, it quickly discharges the FG and it produces a number of defects in the tunnel oxide, depending on its linear energy transfer (LET... 
Occupational stress | single event effects | Energy exchange | Electron traps | radiation-induced leakage current (RILC) | Spontaneous emission | Nonvolatile memory | Charge carrier processes | MOSFET circuits | Tunneling | Leakage current | Engine cylinders | Floating gate (FG) memories | Radiation-induced leakage current (RILC) | Single event effects | Gate arrays | Electric currents, Vagrant | Research | Occupation | Irradiation | Oxides | Arrays | Energy transfer | Gates | Defects
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 09/2017, Volume 25, Issue 9, pp. 2649 - 2657
Journal Article
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, ISSN 0916-8508, 02/2003, Volume E86-A, Issue 2, pp. 342 - 349
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2010, Volume 57, Issue 8, pp. 1873 - 1882
.... We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric... 
trap-assisted tunneling | Electric potential | memory | modeling | device modeling | device simulation | Coulomb oscillation | Electron traps | Energy loss | Sensitivity | TCAD | floating gate (FG) | Tunneling | Silicon | Transient analysis | local trap | single-electron sensitivity | STATES | PHYSICS, APPLIED | BAND OFFSETS | MODEL | POLY-SI | ENGINEERING, ELECTRICAL & ELECTRONIC | SILICON-NITRIDE | MECHANICS | OXIDES | INDUCED LEAKAGE CURRENT | Usage | Memory (Computers) | Scalability | Analysis | Innovations | Tunneling (Physics) | Simulation methods | Degradation | Simulation | Charge | Dielectrics | Devices | Gates
Journal Article
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