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Computational materials science, ISSN 0927-0256, 2015, Volume 103, pp. 52 - 55
Journal Article
Scripta Materialia, ISSN 1359-6462, 11/2016, Volume 124, pp. 56 - 58
The oxidation behavior of near-α Ti alloys with added Al, Ga, Sn, Zr, Mo, Nb, Ta, W, Si, and Ge was analyzed using a regression analysis technique... 
Oxidation | Regression analysis | Multicomponent | Ti alloy | HIGH-TEMPERATURE OXIDATION | 550-DEGREES-C | STABILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | SILICON | NANOSCIENCE & NANOTECHNOLOGY | AIR | OXYGEN | GERMANIUM | Zirconium | Gallium base alloys | Alloys | Germanium | Titanium base alloys | Oxidation tests
Journal Article
Journal of Materials Chemistry A, ISSN 2050-7488, 2017, Volume 5, Issue 24, pp. 12462 - 12473
GexSi1-x alloys have demonstrated synergetic effects as lithium-ion battery (LIB) anodes, because silicon brings its high lithium storage capacity and germanium its better electronic and Li ion conductivity... 
SOLID-STATE NMR | ANODE MATERIALS | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | RAMAN-SPECTROSCOPY | SILICON | CHEMISTRY, PHYSICAL | X-RAY-DIFFRACTION | MULTIVARIATE CURVE RESOLUTION | THIN-FILM ELECTRODES | IN-SITU XRD | STRUCTURAL-CHANGES | LITHIUM-ION BATTERIES | Electrodes | Silicon base alloys | Lithium | Nanostructure | Nuclear magnetic resonance | Anodes | Discharge | Rechargeable batteries
Journal Article
Journal of electronic materials, ISSN 1543-186X, 2019, Volume 48, Issue 8, pp. 5323 - 5327
Journal Article
Journal of materials chemistry. A, Materials for energy and sustainability, ISSN 2050-7488, 2017, Volume 5, Issue 24, pp. 12462 - 12473
GexSi1−x alloys have demonstrated synergetic effects as lithium-ion battery (LIB) anodes, because silicon brings its high lithium storage capacity and germanium its better electronic and Li ion conductivity... 
Materials Chemistry | Curve Resolution | Lithium-Ion Batteries | Anode Materials | Materialkemi | In-Situ XRD | Raman-Spectroscopy | Structural-Changes | Solid-State NMR | Thin-Film Electrodes | X-Ray-Diffraction | Silicon | Multivariate
Journal Article
Journal of magnetism and magnetic materials, ISSN 0304-8853, 2014, Volume 360, pp. 98 - 103
Journal Article
Acta biomaterialia, ISSN 1742-7061, 2018, Volume 82, pp. 197 - 204
Journal Article
International Journal of Thermophysics, ISSN 0195-928X, 3/2019, Volume 40, Issue 3, pp. 1 - 10
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2014, Volume 116, Issue 13, p. 133509
Journal Article
ACS PHOTONICS, ISSN 2330-4022, 11/2015, Volume 2, Issue 11, pp. 1539 - 1545
A comprehensive study of optical transitions in direct-bandgap Ge0.875Sn0.125 group IV alloys via photo-luminescence measurements as a function of temperature, compressive strain and excitation power is performed... 
direct bandgap | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | photoluminescence | group IV | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | NANOSCIENCE & NANOTECHNOLOGY | germanium tin | DEPENDENCE | compressive strain | GAP | OPTICS
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 10/2017, Volume 721, pp. 674 - 682
.... In this report, Ge20Te80−xSnx (0 ≤ x ≤ 4) glassy alloys are systematically studied in order to understand the effect of variation of Sn content on the thermal parameters such as glass transition (Tg... 
Differential scanning calorimetry | Activation energy | Thermal stability | Crystallization | Glass forming ability | THERMAL-STABILITY | GETE FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | CHEMISTRY, PHYSICAL | TE GLASSES | MEDIUM-RANGE ORDER | GERMANIUM TELLURIDE GLASSES | PHASE-CHANGE MATERIALS | ELECTRICAL-SWITCHING BEHAVIOR | TRANSITION TEMPERATURE | STRUCTURAL RELAXATION | AMORPHOUS SELENIUM
Journal Article
Semiconductor science and technology, ISSN 1361-6641, 2018, Volume 33, Issue 6, p. 065008
Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tridimensional... 
GeSn | MBE | flash lamp annealing | ion implantation | n-type doping | PHYSICS, CONDENSED MATTER | GERMANIUM | FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | TIN | DIFFUSION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 01/2015, Volume 7, Issue 1, pp. 62 - 67
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on... 
GeSn | high- k dielectrics | field effect transistor | strained Ge | low bandgap alloys | INTERFACE-TRAP DENSITY | GERMANIUM | MATERIALS SCIENCE, MULTIDISCIPLINARY | high-k dielectrics | NANOSCIENCE & NANOTECHNOLOGY | NUMERICAL-SIMULATION | GE1-XSNX
Journal Article