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IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 7/2019, pp. 1 - 1
Hybrid DC circuit breakers (HCBs) usually require a large number of insulated-gate bipolar transistors (IGBTs) with high turn-off capability for series and... 
Hybrid DC circuit breaker | IGBT | solid-state switch | IGCT
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 4/2018, Volume 34, Issue 7, pp. 1 - 1
Turn-off capability of integrated gate commutated thyristor (IGCT) is highly dependent on the commutation capability of its gate driver unit (GDU). To enhance... 
gate driver unit | stray impedance | MOSFET | turn-off | Voltage measurement | Impedance measurement | Capacitors | Logic gates | Impedance | IGCT | Cathodes | integrated gate-commutated thyristor (IGCT) | Gate driver unit | ENGINEERING, ELECTRICAL & ELECTRONIC | Inductance | Thyristors | Commutation | Housing | MOSFETs | Optimization
Journal Article
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, ISSN 0258-8013, 01/2016, Volume 36, Issue 2, pp. 317 - 326
Journal Article
Fusion Engineering and Design, ISSN 0920-3796, 2019
The Acceleration Grid Power Supply Conversion System (AGPS-CS) of the MITICA Neutral Beam Injector has been installed between late 2017 - early 2018 and... 
Inverter | Acceleration grid power supply | Ac/dc converter | ITER | Power supply | IGCT | MITICA | Neutral beam injector
Journal Article
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, ISSN 0258-8013, 08/2018, Volume 38, Issue 15, pp. 4307 - 4317
Journal Article
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, ISSN 0258-8013, 04/2012, Volume 32, Issue 12, pp. 67 - 74
Journal Article
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854, 06/2015, Volume 2015-, pp. 109 - 112
Conference Proceeding
Xi'an Shiyou Daxue Xuebao (Ziran Kexue Ban)/Journal of Xi'an Shiyou University, Natural Sciences Edition, ISSN 1673-064X, 11/2018, Volume 33, Issue 6, pp. 118 - 123
Journal Article
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, ISSN 0258-8013, 08/2017, Volume 37, Issue 15, pp. 4463 - 4471
Journal Article
IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 04/2018, Volume 65, Issue 4, pp. 2883 - 2892
Journal Article
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, ISSN 0258-8013, 09/2017, Volume 37, Issue 18, pp. 5420 - 5426
Journal Article
Dianli Xitong Zidonghua/Automation of Electric Power Systems, ISSN 1000-1026, 01/2013, Volume 37, Issue 2, pp. 113 - 118
Journal Article
Gaodianya Jishu/High Voltage Engineering, ISSN 1003-6520, 02/2018, Volume 44, Issue 2, pp. 409 - 416
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2018, Volume 88-90, pp. 510 - 513
The IGCT (Integrated Gate Commutated Thyristor) was launched as a new power semiconductor device 20 years ago, using design features where only few reference... 
Integrated gate commutated thyristor | IGCT | Power semiconductor | NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Gaodianya Jishu/High Voltage Engineering, ISSN 1003-6520, 07/2017, Volume 43, Issue 7, pp. 2175 - 2182
Journal Article
Journal Article
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