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2017, Wiley-SID series in display technology, ISBN 1119247365, xx, 320 p., 8 unnumbered p.s of plates
.... Indium gallium zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current... 
Characterization | Zinc compounds | Oxides | Semiconductors | Gallium compounds | Materials
Book
Journal of Alloys and Compounds, ISSN 0925-8388, 12/2016, Volume 688, pp. 1108 - 1114
Journal Article
Journal of the Society for Information Display, ISSN 1071-0922, 03/2018, Volume 26, Issue 3, pp. 169 - 177
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 6, pp. 768 - 770
...) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO... 
indium-gallium-zinc oxide (IGZO) | High-κ | TiO | thin-film transistor (TFT) | High-kappa | GALLIUM-ZINC-OXIDE | STRESS INSTABILITY | TiO2 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 225 - 227
We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO... 
High on current | ZrO | Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) | ZrO2 | high ON current | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2017, Volume 50, Issue 42, p. 42
Device characteristics changes in an a-IGZO thin film transistor under light illumination and at raised temperature have been investigated... 
device deterioration | thin film transistor | amorphous indium gallium zinc oxide | GA-ZN-O | ROOM-TEMPERATURE | PHYSICS, APPLIED | THIN-FILM TRANSISTORS | BIAS INSTABILITY
Journal Article
Solid State Electronics, ISSN 0038-1101, 12/2018, Volume 150, pp. 60 - 65
...) and heavily doped p-type silicon as the bottom electrode (BE), and amorphous indium gallium zinc oxide (α-IGZO... 
Gradual switching | Resistive-switching random-access memory | Synaptic device | Self-rectification | Amorphous indium gallium zinc oxide | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | FILM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2011, Volume 32, Issue 12, pp. 1695 - 1697
Journal Article
Solid State Electronics, ISSN 0038-1101, 2010, Volume 54, Issue 12, pp. 1497 - 1499
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 11/2018, Volume 354, pp. 169 - 174
...) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance... 
Conductive-bridge random access memory (CBRAM) | Physical vapor deposition | Thermal conductivity | Indium-gallium-zinc-oxide | Gallium oxide | HIGH-PERFORMANCE | PHYSICS, APPLIED | OXIDE | MEMORY | THIN-FILM TRANSISTORS | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 09/2019, Volume 800, pp. 468 - 477
Journal Article
physica status solidi (a), ISSN 1862-6300, 06/2018, Volume 215, Issue 12, p. n/a
Journal Article