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Energies, ISSN 1996-1073, 02/2018, Volume 11, Issue 3, p. 595
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 08/2019, Volume 34, Issue 8, pp. 7942 - 7956
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 02/2019, Volume 34, Issue 2, pp. 1765 - 1772
Power electronics inverters are one of the major failure sources in motor drive systems, and power devices are one of the main causes of the power electronics... 
Insulated gate bipolar transistors | Motor drives | Loading | Layout | insulated-gate bipolar transistor (IGBT) module | reliability | Inverters | inverter | Thermal loading | Junctions | motor drives | IMPROVEMENT | POWER | ENGINEERING, ELECTRICAL & ELECTRONIC | Lifetime | Electronic devices | Asymmetry | Internal layout | Modules | Electronics | Motors | Power rating | Reliability
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 08/2019, Volume 34, Issue 8, pp. 7957 - 7971
Journal Article
Energies, ISSN 1996-1073, 05/2019, Volume 12, Issue 9, p. 1791
On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT... 
Bond wire failure | On-state voltage | Insulated gate bipolar transistor (IGBT) module | Separation strategy | on-state voltage | separation strategy | bond wire failure | insulated gate bipolar transistor (IGBT) module
Journal Article
IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, 03/2014, Volume 2, Issue 1, pp. 97 - 114
Journal Article
IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 10/2019, Volume 66, Issue 10, pp. 8148 - 8160
In this paper, we propose a method to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the junction temperature cooling... 
Temperature measurement | Insulated gate bipolar transistors | Temperature sensors | Condition monitoring | thermal parameters | Cooling | Thermal resistance | thermal network | Junctions | Monitoring | insulated gate bipolar transistor (IGBT) module | Cooling curves | Power loss | Parameters | Computer simulation | Circuits | Modules | Thermodynamic properties | Thermal simulation
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2019, Volume 66, Issue 11, pp. 4858 - 4864
An insulated-gate bipolar transistor (IGBT) module has two aging modes: 1) bond wire fatigue and 2) solder fatigue, both of which have a significant impact on... 
Insulated gate bipolar transistors | Temperature measurement | Wires | insulated-gate bipolar transistor (IGBT) module | separation | Aging | Fatigue | System-on-chip | ON-state voltage | Junctions | Fatigue diagnosis | PHYSICS, APPLIED | POWER | RELIABILITY | MODEL | INVERTER | ENGINEERING, ELECTRICAL & ELECTRONIC | JUNCTION TEMPERATURE ESTIMATION | SOLDER FATIGUE
Journal Article
IEEE Transactions on Power Delivery, ISSN 0885-8977, 06/2014, Volume 29, Issue 3, pp. 1354 - 1362
Journal Article
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