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by Guo, ZY and Xing, HY and Wang, Y and Jia, QJ and Zheng, ZJ and Gong, Y and Yang, DL and Li, HJ and Hao, XY and Dong, JC and Li, YC and Li, XD and Chen, DL
JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN 0953-8984, 07/2019, Volume 31, Issue 26, p. 265404
The pressure-induced phase-transition sequences and structural evolution across the insulator- metal transition (IMT) in multiferroic BiFeO3 still remain... 
PHYSICS, CONDENSED MATTER | multiferroic BiFeO3 | CRYSTAL-STRUCTURES | structural transformation | MAGNETIC-PROPERTIES | PEROVSKITES | CELL | high pressure | SOFTWARE | PROGRAM | insulator-metal transition
Journal Article
Nano Letters, ISSN 1530-6984, 03/2015, Volume 15, Issue 3, pp. 1861 - 1866
In this work, we demonstrate abrupt, reversible switching of resistance in 1T-TaS2 using dc and pulsed sources, corresponding to an insulator–metal transition... 
insulator-metal-transition | resistive switching | Mott insulator | charge density wave | 1T-TaS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DOPED 1T-TAS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | NBSE3 | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | DENSITY-WAVE TRANSPORT | IT-TaS2 | PURE
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1358 - 1365
Hyper-FET, an emerging device with unconventional characteristics, exhibits sub-kT/q switching and can attain higher ON current (I ON ) than standard FinFETs... 
Switches | Hyper-FET | Inverters | steep slope | NAND | Standards | voltage swing | Resistance | NOR | FinFETs | Energy delay | phase transition | Hysteresis | insulator-metal transition | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Research | Field-effect transistors | Electric resistance | Circuit design | Phase transformations | Co-design
Journal Article
JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, 05/2015, Volume 48, Issue 19, p. 195105
The threshold current for inducing the metal-insulator transition in a NbO2-x selector element is shown to be affected by the properties of an adjacent memory... 
insulator-metal-transition | PHYSICS, APPLIED | NbO2 | FILMS | ARRAY | MEMORY | hybrid memory device | RRAM | resistive switching | threshold switching
Journal Article
JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN 0953-8984, 08/2017, Volume 29, Issue 30, p. 305801
We study the influence of external pressure on the electronic and magnetic structure of EuMnO3 from first-principles calculations. We find a pressure-induced... 
MAGNETISM | PHYSICS, CONDENSED MATTER | first-principles calculations | multiferroics | rare-earth manganites | insulator-metal transition | Condensed Matter | Computational Physics | Materials Science | Physics
Journal Article
Proceedings of the National Academy of Sciences, ISSN 0027-8424, 02/2015, Volume 112, Issue 6, pp. 1670 - 1674
The perovskite PbCrO3 is an antiferromagnetic insulator. However, the fundamental interactions leading to the insulating state in this single-valent perovskite... 
Perovskite | Charge disproportionation | Insulator-metal transition | High pressure | perovskite | SPECTROSCOPY | MULTIDISCIPLINARY SCIENCES | charge disproportionation | LARGE-VOLUME | CRYSTAL | CHROMIUM | high pressure | MICROSTRUCTURE | insulator-metal transition | insulator–metal transition | Physical Sciences
Journal Article
Nano Letters, ISSN 1530-6984, 2019, Volume 19, Issue 7, pp. 4738 - 4744
Tellurene is a recently discovered 2D material with high hole mobility and air stability, rendering it a good candidate for future applications in electronics,... 
2D tellurene | Insulator-metal transition | charge transport | electrolyte gating | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DOME | IONIC-LIQUID | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | TRANSPORT | INDUCED SUPERCONDUCTIVITY | SURFACE | BLACK PHOSPHORUS
Journal Article
ACS APPLIED MATERIALS & INTERFACES, ISSN 1944-8244, 02/2019, Volume 11, Issue 8, pp. 7666 - 7670
We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO3 films grown using radical-based molecular beam epitaxy. An applied positive bias... 
ion gel | wide bandgap semiconductor | hybrid molecular beam epitaxy | MATERIALS SCIENCE, MULTIDISCIPLINARY | electrostatic gating | electron-electron interaction | reversibility | NANOSCIENCE & NANOTECHNOLOGY | insulator-metal transition
Journal Article
Journal of physics. Condensed matter : an Institute of Physics journal, ISSN 0953-8984, 05/2019, Volume 31, Issue 19, p. 195602
We report the observation of electric-voltage induced insulator-metal phase transition in a ruthenate Mott insulator Ca-3(Ru0.9Ti0.1)(2)O-7. We show that the... 
ruthenates | PHYSICS, CONDENSED MATTER | FIELD | STATE | electric voltage-induced | WIDE | avalanche breakdown | BANDGAP SEMICONDUCTORS | ELECTRONICS | insulator-metal transition | DIELECTRIC-BREAKDOWN
Journal Article
Light: Science and Applications, ISSN 2095-5545, 10/2016, Volume 5, Issue 10, pp. e16173 - e16173
Nanoscale devices in which the interaction with light can be configured using external control signals hold great interest for next-generation optoelectronic... 
VO2 | Insulator-metal phase transition | Plasmonics | Nanoantenna | NONVOLATILE | nanoantenna | METAMATERIALS | NANOANTENNAS | TO-METAL TRANSITION | NEAR-FIELD | insulator-metal phase transition | MEMORY | SPECTROSCOPY | plasmonics | DYNAMICS | OPTICS | Nanoscience | Insulation | Plasma | Metals | Antennas
Journal Article
Physics Letters A, ISSN 0375-9601, 11/2015, Volume 379, Issue 43-44, pp. 2883 - 2889
First principles calculations have been performed to investigate the electronic properties of 1T′-MoS2 under uniaxial strain. Insulator–metal transition (IMT)... 
Uniaxial strain | Insulator–metal transition | Two dimensional topological insulators | 1T′-MoS2 | TOPOLOGICAL INSULATORS | Insulator-metal transition | PHYSICS, MULTIDISCIPLINARY | TOTAL-ENERGY CALCULATIONS | 1T '-MoS2 | HGTE QUANTUM-WELLS | WAVE BASIS-SET
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 06/2017, Volume 29, Issue 30, p. 305801
We study the influence of external pressure on the electronic and magnetic structure of EuMnO from first-principles calculations. We find a pressure-induced... 
first-principles calculations | multiferroics | rare-earth manganites | insulator-metal transition
Journal Article
Advanced Materials, ISSN 0935-9648, 08/2011, Volume 23, Issue 31, pp. 3536 - 3541
Journal Article
Physics Letters, Section A: General, Atomic and Solid State Physics, ISSN 0375-9601, 11/2015, Volume 379, Issue 43-44, pp. 2883 - 2889
First principles calculations have been performed to investigate the electronic properties of 1T′-MoS 2 under uniaxial strain. Insulator-metal transition (IMT)... 
Uniaxial strain | Two dimensional topological insulators | 1T′-MoS 2 | Insulator-metal transition
Journal Article
Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, 11/2016, Volume 417, pp. 69 - 74
The effect of external hydrostatic pressure (P) on the magnetization (M) and resistivity (ρ) properties of charge-orbital (CO) ordered-insulating... 
Insulator–metal transition | Charge-orbital-insulating manganites | Piezoresistance | High pressure | Insulator-metal transition
Journal Article
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