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Journal of applied physics, ISSN 1089-7550, 1993, Volume 73, Issue 10, pp. 5058 - 5074
... the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO2 interface... 
ELECTRON-SPIN-RESONANCE | PHYSICS, APPLIED | SILICON DIOXIDE FILMS | SI-SIO2 INTERFACE | GATE MOS DEVICES | POSITIVE CHARGE | THERMALLY STIMULATED CURRENTS | RADIATION-INDUCED CHARGE | 1/F NOISE | FIELD-EFFECT TRANSISTORS | 100 SILICON | Magnetic traps | Metal oxide semiconductors | Research | SEMIMETALS | DEFECTS | OXYGEN COMPOUNDS | SEMICONDUCTOR DEVICES | TRAPS | SILICON | RADIATION EFFECTS | NOISE | MATERIALS SCIENCE | HARDENING | PHYSICAL RADIATION EFFECTS | CHALCOGENIDES | ELEMENTS | INTERFACES | SILICON COMPOUNDS 360605 -- Materials-- Radiation Effects | OXIDES | SILICON OXIDES
Journal Article
Applied Surface Science, ISSN 0169-4332, 09/2014, Volume 312, pp. 157 - 161
We investigate the impact of interface traps and bulk traps on the performance of n GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs... 
Traps | Simulation | GaN | HEMT | Modeling | Interface | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CHEMISTRY, PHYSICAL | PROPOSAL | MATERIALS SCIENCE, COATINGS & FILMS | Computer simulation | Semiconductor devices | Barrier layers | Gallium nitrides | High electron mobility transistors | Devices | Aluminum nitride
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2013, Volume 60, Issue 2, pp. 776 - 781
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 06/2014, Volume 24, Issue 23, pp. 3587 - 3592
Journal Article
IEEE transactions on electron devices, ISSN 1557-9646, 2019, Volume 66, Issue 11, pp. 4653 - 4659
In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs... 
Electric potential | MOSFET | charge-based model | Computational modeling | Aging effects | biosensors | Electron traps | double-gate junctionless field-effect transistor (DG JLFET) | Logic gates | temperature | Energy states | interface traps | ionizing radiation | PHYSICS, APPLIED | DOUBLE-GATE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics A, ISSN 0947-8396, 2/2018, Volume 124, Issue 2, pp. 1 - 9
.... At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs... 
Condensed Matter Physics | Operating Procedures, Materials Treatment | Optical and Electronic Materials | Characterization and Evaluation of Materials | Surfaces and Interfaces, Thin Films | Physics | Nanotechnology | ROOM-TEMPERATURE | STATES | PHYSICS, APPLIED | MEMORY | SPECTROSCOPY | MATERIALS SCIENCE, MULTIDISCIPLINARY | DOTS | TIME | QUANTUM CONFINEMENT | Silicon | Dielectrics
Journal Article
Microelectronics and reliability, ISSN 0026-2714, 2018, Volume 80, pp. 266 - 277
Journal Article
Journal of physics. D, Applied physics, ISSN 1361-6463, 2018, Volume 51, Issue 14, p. 145306
Journal Article
Physical review. B, Condensed matter and materials physics, ISSN 1550-235X, 2010, Volume 82, Issue 24
We introduce the time-dependent defect spectroscopy (TDDS) for the analysis of a particular class of oxide defects known as "border traps... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | INSTABILITY | SINGLE | MATERIALS SCIENCE, MULTIDISCIPLINARY | INTERFACE TRAPS | LEVEL TRANSIENT SPECTROSCOPY | NOISE | MODEL | NBTI | LAYERS | DEGRADATION | EMISSION
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2006, Volume 53, Issue 7, pp. 1583 - 1592
Journal Article