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Semiconductor Science and Technology, ISSN 0268-1242, 06/2015, Volume 30, Issue 6, p. 65013
Extracted interface trap densities (D-it) in the oxide/III-V gate stacks vary strongly with the utilized measurement procedures and values of device parameters used in the extraction analysis... 
surface states | field effect devices | electric variable measurements | III-V MOS | PHYSICS, CONDENSED MATTER | SEMICONDUCTOR | TRAPS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Nanotechnology, ISSN 1536-125X, 09/2011, Volume 10, Issue 5, pp. 1004 - 1009
... influence of the interface state density on the wire's electrical characteristics. By measuring the resistances of doped Si nanowires as a function of nanowire radii... 
Resistance | interface state density | Impurities | Doping | Silicon | Nanowires | Interface states | Doping concentration | Electrical resistance measurement | nanowire | silicon | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | Conduction | Ionization | Mathematical analysis | Cross sections | Density
Journal Article
Synthetic metals, ISSN 0379-6779, 2011, Volume 161, Issue 11-12, pp. 1079 - 1087
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2010, Volume 57, Issue 7, pp. 1642 - 1650
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2016, Volume 37, Issue 12, pp. 1547 - 1550
... . Contrary to the capacitance-based methods commonly used for extraction of interface trap density, a gated Hall method can separate the contributions of fast-trapped charges... 
Temperature measurement | scattering mechanism | Electron traps | MOSFET | mobility | Density measurement | Capacitance-voltage characteristics | interface states | Logic gates | III-V MOSFETs | carrier density | Scattering parameters | EXTRACTION | TRANSPORT | SEMICONDUCTOR | OXIDE | BURIED-CHANNEL | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Temperature dependence | Indium gallium arsenides
Journal Article
半导体学报, ISSN 1674-4926, 2013, Volume 34, Issue 5, pp. 7 - 12
.... A combined theory/experimental approach for de- termining the resistivity and the density of interface states of the bending silicon nanobridges is presented... 
p型硅 | 界面态密度 | 提取 | 电阻率 | 偏置电压 | 弯曲变形 | 悬浮 | 纳米 | interface state density | silicon nanobridges | bias voltages | resistivity | Deformation | Nanocomposites | Electrical resistivity | Bending | Nanomaterials | Silicon | Nanostructure | Density
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 05/2018, Volume 231, pp. 74 - 80
....•Interface state density of MIS junction is lower compared with the MS junction.•Leakage current mechanism is ruled by a PFE mechanism in both MS and MIS junctions... 
N-type GaN | Zirconium oxide | Electrical properties | Reverse leakage current mechanism | MS and MIS junctions | Insulating layer | Interface state density | THIN-FILMS | METAL-SEMICONDUCTOR | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | ZIRCONIUM-OXIDE | MECHANISMS | EXTRACTION | TEMPERATURE | GAN | SCHOTTKY CONTACTS | DIODES
Journal Article
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 10/2019, pp. 420 - 424
.... Extracted interface state density using subthreshold I-V curves indicates very different SiC/SiO 2 interface for devices from different vendors. 
Temperature measurement | Electron traps | Silicon carbide | reliability | Logic gates | Threshold voltage | threshold voltage instability | Interface states | Silicon Carbide (SiC) | Stress | MOSFETs
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 1006 - 1008
Journal Article
Journal of applied polymer science, ISSN 0021-8995, 2012, Volume 125, Issue 2, pp. 1185 - 1192
Journal Article
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