X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
junction depth (70) 70
physics, applied (32) 32
sheet resistance (20) 20
silicon (20) 20
engineering, electrical & electronic (18) 18
diffusion (15) 15
materials science, multidisciplinary (14) 14
transient-enhanced diffusion (13) 13
shallow junction (12) 12
annealing (11) 11
physics, condensed matter (11) 11
halbleiterübergang (10) 10
rapid thermal annealing (10) 10
silicium (10) 10
analysis (9) 9
boron (9) 9
molecular ion implantation (9) 9
mosfets (9) 9
layers (8) 8
negative junction depth (8) 8
nuclear science & technology (8) 8
photovoltaic cells (8) 8
threshold voltage (8) 8
doping (7) 7
instruments & instrumentation (7) 7
junctions (7) 7
physics, atomic, molecular & chemical (7) 7
physics, nuclear (7) 7
solarzelle (7) 7
defects (6) 6
devices (6) 6
dose-rate (6) 6
efficiency (6) 6
ion implantation (6) 6
metal oxide semiconductor field effect transistors (6) 6
solar cells (6) 6
emitters (5) 5
fabrication (5) 5
ionenimplantation (5) 5
materials science, coatings & films (5) 5
nanoscience & nanotechnology (5) 5
pn-übergang (5) 5
semiconductor device modeling (5) 5
bor (4) 4
channels (4) 4
chemistry, physical (4) 4
cluster ion implantation (4) 4
doping concentration (4) 4
energy & fuels (4) 4
flächenwiderstand (4) 4
gates (4) 4
impurities (4) 4
junction (4) 4
mathematical models (4) 4
phosphorus (4) 4
semiconductors (4) 4
solar energy (4) 4
computer simulation (3) 3
damage (3) 3
dependence (3) 3
depletion (3) 3
dopants (3) 3
dotierungsprofil (3) 3
drains (3) 3
electric potential (3) 3
electrical junctions (3) 3
elementhalbleiter (3) 3
enhanced diffusion (3) 3
furnace annealing (3) 3
glühen (3) 3
hgcdte (3) 3
laser (3) 3
laser doping (3) 3
logic gates (3) 3
mathematical analysis (3) 3
measurement (3) 3
mosfet (3) 3
nanostructure (3) 3
p-n junctions (3) 3
performance evaluation (3) 3
plasma doping (3) 3
recessed channel (3) 3
siliciumsubstrat (3) 3
simulation (3) 3
solar batteries (3) 3
surface (3) 3
ultrashallow junctions (3) 3
voltage (3) 3
abtastgeschwindigkeit (2) 2
arsenic (2) 2
ausheilen (2) 2
background doping concentration (2) 2
barriers (2) 2
bi (2) 2
bismuth type modulation (2) 2
bombardment (2) 2
boron diffusion (2) 2
breakdown (2) 2
carrier lifetime (2) 2
characterization and evaluation of materials (2) 2
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Applied Radiation and Isotopes, ISSN 0969-8043, 04/2014, Volume 86, pp. 46 - 51
A theoretical study of the use of a beta-cell as a temperature sensor using MCNP4C Monte Carlo code is presented in this paper. Nickel-63 and silicon were... 
MCNP4C Monte Carlo code | Silicon beta-cell temperature sensor | Doping concentration | Nickel-63 | Junction depth
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 11/2015, Volume 142, pp. 2 - 11
For the contacting of boron-doped emitters with screen-printed metallization in n-type silicon solar cells, usually a small amount of aluminum is added to the... 
Silicon solar cells | Crystallites | Boron emitter | Specific contact resistance | Junction depth | PHYSICS, APPLIED | METALLIZATION | ENERGY & FUELS | FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | SCHOTTKY BARRIERS | EMITTERS | P-TYPE SILICON | SI SOLAR-CELLS | EMISSION | Analysis | Silicon | Solar energy | Pastes | Silver | Depletion | Doping | Dopants | Depth profiling | Contact
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2019, Volume 40, Issue 3, pp. 391 - 394
Through 3D TCAD simulations with single charge traps, we discovered a direct evidence to the mechanism of DRAM row hammer effect. It is governed by a charge... 
Solid modeling | TCAD simulations | junction depth | Random access memory | bit fault | feature size scaling | Discharges (electric) | temperature effect | Temperature measurement | charge traps | Electron traps | victim row | Energy states | DRAM | row hammer effect | Aggressor row | Junctions | ENGINEERING, ELECTRICAL & ELECTRONIC | Charge simulation | Energy levels | Migration | Energy storage
Journal Article
AIP Conference Proceedings, ISSN 0094-243X, 02/2019, Volume 2072, Issue 1
A modified 3 moment approach is adopted to determine the junction depth of ion-implanted p++-n junction Si based high-power MMW-device. This study is capable... 
ion-energy | ion-implantation technique | three-moment approach | range | Avalanche carrier generation | junction-depth | background doping concentration | Transit time phenomena | negative resistance profile | Military applications | Transit time | Millimeter waves | Dependence
Journal Article
Physica Status Solidi A: Applications and Materials Science, ISSN 1862-6300, 2016, Volume 213, Issue 8, pp. 2216 - 2222
The influence of junction depth in III-V solar cell structures was investigated for GaAs and InGaP cells. Typical III-V solar cells employ a shallow junction... 
efficiency | III–V solar cells | junction depth | GaAs | InGaP | VELOCITY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | GAAS DIODES | PERIMETER RECOMBINATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | SURFACE | III-V solar cells | Solar cells | Solar batteries | Photovoltaic cells | Solvents | Gallium arsenide | Current loss | Collection | Open circuit voltage | Optimization
Journal Article
Nanoscience and Nanotechnology Letters, ISSN 1941-4900, 01/2016, Volume 8, Issue 1, pp. 38 - 42
An emitter related process is one of important processes in terms of improving solar cells efficiency and a thermal diffusion process has been usually used for... 
Junction Depth | Emitter Diffusion Process | Solar Cell | Oxide Barrier | Impurity Concentration | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | Solar cells | Impurities | Photovoltaic cells | Diffusion barriers | Barriers | Oxides | Emitters | Diffusion
Journal Article
APPLIED RADIATION AND ISOTOPES, ISSN 0969-8043, 04/2014, Volume 86, pp. 46 - 51
A theoretical study of the use of a beta-cell as a temperature sensor using MCNP4C Monte Carlo code is presented in this paper. Nickel-63 and silicon were... 
SILICON | Silicon beta-cell temperature sensor | SCHOTTKY-BARRIER DIODE | SIMULATION | BETAVOLTAIC BATTERY | Junction depth | LIFETIME | DEPENDENCE | CHEMISTRY, INORGANIC & NUCLEAR | MCNP4C Monte Carlo code | Nickel-63 | NUCLEAR SCIENCE & TECHNOLOGY | Doping concentration | RADIOLOGY, NUCLEAR MEDICINE & MEDICAL IMAGING
Journal Article
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, ISSN 0894-3370, 01/2019, Volume 32, Issue 1, pp. e2487 - n/a
Journal Article
Energy Procedia, ISSN 1876-6102, 2014, Volume 54, pp. 734 - 739
Internal quantum efficiency of cells after laser assisted processes has been studied in this work. A 1070 nm CW laser beam was used for doping a p-type... 
PC1D | laser doping | Internal quantum efficiency | junction depth | Junction depth | Laser doping
Journal Article
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, ISSN 1007-2276, 02/2012, Volume 41, Issue 2, pp. 279 - 283
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 03/2017, Volume 59, pp. 10 - 17
Deep diffusion of phosphorus atoms in monocrystalline silicon using laser doping process has been studied in this work. A pulse modulated CW fiber laser of... 
Deep diffusion | Junction depth | EBIC | Laser doping | LARGE-AREA | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | BORON | MATERIALS SCIENCE, MULTIDISCIPLINARY | DEPOSITED SILICON | NITRIDE | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | SELECTIVE EMITTER | ABLATION | SI SOLAR-CELLS | EFFICIENCY | Lasers | Silicon
Journal Article
Applied Surface Science, ISSN 0169-4332, 08/2014, Volume 310, pp. 230 - 234
Journal Article
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, 12/2011, Volume 269, Issue 24, pp. 3217 - 3221
In this study, B1- monomer and B4- cluster ions of the same boron kinetic energy level per atom (20 keV/atom) and total atomic fluence (2 × 10 atoms/cm ) were... 
Annealing | Transient-enhanced diffusion | Cluster ion implantation | Sheet resistance | Junction depth | Shallow junction | Transmission electron microscopy | Nuclear power generation | Silicon | Beam interactions | Kinetic energy | Monomers | Radiation damage
Journal Article
Thin Solid Films, ISSN 0040-6090, 05/2013, Volume 534, pp. 629 - 635
Journal Article
Journal of Communications Technology and Electronics, ISSN 1064-2269, 9/2017, Volume 62, Issue 9, pp. 1078 - 1082
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.