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IEEE Access, ISSN 2169-3536, 2019, Volume 7, pp. 96540 - 96548
This paper analyzes in detail the effect of a simple solution for ground leakage current mitigation applicable to transformerless three-phase current source... 
photo-voltaic power systems | renewable energy sources | Capacitors | Switches | Harmonic analysis | Inverters | Topology | ground leakage current | Leakage currents | Inductors | Current source inverter | COMPUTER SCIENCE, INFORMATION SYSTEMS | TELECOMMUNICATIONS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2014, Volume 35, Issue 12, pp. 1200 - 1202
Postgate annealing (PGA) in N 2 /O 2 atmosphere at 300°C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a... 
MOSFET | Annealing | on/off current ratio | enhancement mode | GaN | Leakage currents | Post-gate annealing (PGA) | mesa isolation current | Gallium nitride | Aluminum gallium nitride | Passivation | AL2O3/GAN MOSFET | INTERFACE | ON/OFF current ratio | GAN MIS-HEMTS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Scientific Reports, ISSN 2045-2322, 2013, Volume 3, Issue 1, p. 2575
All-carbon sp-sp(2) hybrid structures comprised of a zigzag-edged trigonal graphene (ZTG)and carbon chains are proposed and constructed as nanojunctions. It... 
Leakage | Integrated circuits | Project finance | Corporate taxes | Carbon
Journal Article
Physical Review Letters, ISSN 0031-9007, 02/2011, Volume 106, Issue 9, p. 097001
In highly resistive superconducting tunnel junctions, excess subgap current is usually observed and is often attributed to microscopic pinholes in the tunnel... 
LEAKAGE | SUBGAP CONDUCTIVITY | GAP STRUCTURE | PHYSICS, MULTIDISCIPLINARY | NB/ALOX/NB | Physics - Superconductivity | Fysik | Physical Sciences | subgap conductivity | barrier transparency | nb/alox/nb | qubits | gap structure | contacts | leakage
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 04/2017, Volume 32, Issue 4, pp. 2794 - 2807
Journal Article
IEEE Transactions on Industry Applications, ISSN 0093-9994, 05/2016, Volume 52, Issue 3, pp. 2368 - 2377
Journal Article
Journal of Physics and Chemistry of Solids, ISSN 0022-3697, 09/2019, Volume 132, pp. 157 - 161
In this work, we report on the electrical characteristics of Pt/Au Schottky contacts to Al0.2Ga0.8N/GaN heterostructures. Indeed, we have realized gate... 
Inhomogeneity | Leakage current | Barrier height | AlGaN/GaN HEMT | Ideality factor | Deep traps | CONTACTS | PHYSICS, CONDENSED MATTER | TEMPERATURE-DEPENDENCE | SERIES RESISTANCE | HEIGHTS | MECHANISMS | SCHOTTKY DIODES | CHEMISTRY, MULTIDISCIPLINARY | TRANSPORT | I-V | ALGAN/GAN HEMTS
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 10/2014, Volume 29, Issue 10, pp. 5265 - 5277
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2015, Volume 117, Issue 21, p. 215103
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 01/2019, Volume 141, Issue 4, pp. 1628 - 1635
Metal-semiconductor contacts are key components of nano-electronics and atomic-scale integrated circuits. In these components Schottky diodes provide a low... 
TRANSISTORS | INTERFACE | CONDUCTIVITY | ENERGY-LEVEL ALIGNMENT | HIGH-CURRENT-DENSITY | METAL | ADSORPTION | CHEMISTRY, MULTIDISCIPLINARY | MOLECULES
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 07/2019, Volume 246, pp. 13 - 20
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2015, Volume 106, Issue 15, p. 151106
Journal Article
Computer, ISSN 0018-9162, 12/2003, Volume 36, Issue 12, pp. 68 - 75
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 02/2012, Volume 27, Issue 2, pp. 752 - 762
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2014, Volume 116, Issue 18, p. 184503
Journal Article