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IEEE Sensors Journal, ISSN 1530-437X, 07/2019, Volume 19, Issue 14, pp. 5692 - 5699
Journal Article
ChemPhysChem, ISSN 1439-4235, 04/2016, Volume 17, Issue 7, pp. 1046 - 1053
Controlled logic gates, where the logic operations on the Data inputs are performed in the way determined by the Control signal, were designed in a chemical... 
flow cells | biocomputing | enzymes | logic gates | biocatalysis | Enzymes | Catalysis
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2016, Volume 63, Issue 8, pp. 3338 - 3341
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2011, Volume 32, Issue 3, pp. 252 - 254
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2014, Volume 61, Issue 11, pp. 3896 - 3900
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2012, Volume 59, Issue 10, pp. 2582 - 2588
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2014, Volume 35, Issue 8, pp. 877 - 879
A novel silicon-based resistive-gate field-effect transistor (ReFET) with metal-insulator-metal-oxide gate stack is proposed. With the abrupt resistance change... 
subthreshold slope | MOSFET | Resistive-gate field-effect transistor (ReFET) | Switches | Logic gates | Tin | steep-slope | Insulators | Threshold voltage | resistive switching | MEMORY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2018, Volume 39, Issue 9, pp. 1366 - 1369
The OFF-state drain leakage characteristics in 600-V p-GaN HEMTs with an ohmic gate contact are investigated under dynamic switching conditions instead of... 
Buffer layers | Electron traps | ohmic gate contact | Switches | I OFF">Dynamic I OFF | Logic gates | HEMTs | hole injection | p-GaN HEMTs | MODFETs | Power consumption | Semiconductor devices | Ohmic | Leakage current | High electron mobility transistors | Switching
Journal Article
1985, ISBN 9780003830194, xiv, 349
Book
IEEE Electron Device Letters, ISSN 0741-3106, 04/2011, Volume 32, Issue 4, pp. 569 - 571
Plasma damage on a high-k/SiO 2 dielectric at a gate edge during a dry etch process is investigated. The damage was observed to generate slow oxide traps,... 
Electron traps | Noise | oxide trap | Metals | High K dielectric materials | Logic gates | plasma damage | Gate edge direct tunneling (EDT) current | random telegraph noise (RTN) | Leakage current | Dielectrics | ENERGY | LEAKAGE CURRENT | I-G-RTN | SUBMICROMETER MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Tunneling | Oxides | Damage | Etching (metallography) | Gates | Silicon dioxide | Drying
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2013, Volume 34, Issue 2, pp. 202 - 204
The impact of gate metals on the threshold voltage ( V TH ) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated by... 
Gate current | Si substrate | threshold voltage | p-type GaN | MODFETs | Gallium nitride | high-electron-mobility transistor (HEMT) | gate metal | Schottky contact | tungsten | Logic gates | HEMTs | Nickel | Aluminum gallium nitride | ENHANCEMENT | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article