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physics, applied (136) 136
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Microelectronic Engineering, ISSN 0167-9317, 2004, Volume 71, Issue 3, pp. 348 - 357
The effect of low-k materials on the stress and stress distribution in via-line structures of dual damascene Cu interconnects were analyzed using... 
Stress | Damascene Cu | Low- k | FEM | Low-k | THIN-FILMS | stress | PHYSICS, APPLIED | THERMAL-EXPANSION | VOID NUCLEATION | RELIABILITY | MECHANICAL-PROPERTIES | LINES | POISSON RATIO | ENGINEERING, ELECTRICAL & ELECTRONIC | damascene Cu | COPPER INTERCONNECTS | low-k | INTEGRATION | COEFFICIENT | OPTICS
Journal Article
Thin Solid Films, ISSN 0040-6090, 2006, Volume 504, Issue 1, pp. 284 - 287
The dependence of annealing temperature on stress and microstructure in damascene Cu was examined by X-ray diffraction and transmission electron microscopy.... 
Damascene Cu/low- k | X-ray diffraction | Finite element analysis | Hydrostatic stress | Damascene Cu/low-k | PHYSICS, CONDENSED MATTER | hydrostatic stress | PHYSICS, APPLIED | damascene Cu/low-k | MATERIALS SCIENCE, MULTIDISCIPLINARY | finite element analysis | LINES | MATERIALS SCIENCE, COATINGS & FILMS | Growth | Analysis | Dielectrics
Journal Article
IEEE Transactions on Components, Packaging and Manufacturing Technology, ISSN 2156-3950, 09/2015, Volume 5, Issue 9, pp. 1273 - 1283
Journal Article
IEEE Transactions on Dielectrics and Electrical Insulation, ISSN 1070-9878, 02/2019, Volume 26, Issue 1, pp. 270 - 275
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 04/2016, Volume 156, pp. 70 - 77
Journal Article
by Wang, L and Wang, J and Xu, C and Lin, L and Yang, C and Xiao, F and Zhang, W
Microelectronic Engineering, ISSN 0167-9317, 09/2016, Volume 163, pp. 78 - 82
The structural integrity on low-k layers is a major reliability concern on three-dimensional packaging technology. The low-k material used in dies has a... 
Dielectric crack | Low-k layer | Reliability | Chip package interaction | Finite elements analysis | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2015 IEEE International Reliability Physics Symposium, ISSN 1541-7026, 04/2015, Volume 2015-, pp. 2D.3.1 - 2D.3.6
This paper extends a previously published model [1] of stress induced voiding (SIV) to the case where diffusion proceeds according to a power-law in the... 
dislocation creep | Creep | Extreme Value Distributions (EVD) | Predictive models | High Temperature Stress (HTS) | Hazards | Power-law Creep | Approximation methods | Copper/low-k | Limited Failure Population (LFP) | tail estimation | Stress | Stress Induced Voiding (SIV) | Stress Migration (SM) | Data models | void nucleation | Reliability | void growth
Conference Proceeding
Microelectronics Reliability, ISSN 0026-2714, 07/2009, Volume 49, Issue 7, pp. 721 - 726
The fracture energies of a series of tensile plasma-enhanced chemical vapor deposited low dielectric constant (low-k) SiO C :H, SiO N :H and SiN :H thin films... 
LOW-DIELECTRIC-CONSTANT | PHYSICS, APPLIED | LOW-K | NANOSCIENCE & NANOTECHNOLOGY | HYDROGEN SILSESQUIOXANE FILMS | MECHANICAL-PROPERTIES | CHANNEL CRACKING | ENGINEERING, ELECTRICAL & ELECTRONIC | BRILLOUIN LIGHT-SCATTERING | SILICON-NITRIDE FILMS | ELASTIC-MODULUS | X-RAY REFLECTIVITY | THERMAL-STRESS
Journal Article
Czech Journal of Genetics and Plant Breeding, ISSN 1212-1975, 2016, Volume 52, Issue 2, pp. 77 - 82
Tobacco (Nicotiana tabacum) has a relatively high requirement for potassium (K+). However, the molecular basis of tolerance to low-K+ stresses in tobacco still... 
Low-K | Tobacco | AtCIPK23 | uptake | Potassium | tolerance | low-K+ tolerance | AGRONOMY | potassium | INVOLVEMENT | TRANSGENIC PLANTS | FUNCTIONAL-CHARACTERIZATION | POTASSIUM-TRANSPORT | K+ uptake | PLANT SCIENCES | RESPONSES | CHANNEL | AKT1 | tobacco | MOLECULAR-CLONING | ARABIDOPSIS | REVEALS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2009, Volume 94, Issue 18, pp. 181914 - 181914-3
High intensity x-rays at an advanced light facility were used to probe the strained atomic spacing of Cu interconnects embedded in ultralow- k dielectrics of... 
low-k dielectric thin films | PHYSICS, APPLIED | porosity | X-ray diffraction | copper | integrated circuit interconnections | LINES
Journal Article
Nanoscience and Nanotechnology Letters, ISSN 1941-4900, 08/2017, Volume 9, Issue 8, pp. 1139 - 1145
The recent requirements for finer pitch and miniaturization of the package have drawn attention to flip chip technology with copper (Cu) pillar bump. The Cu... 
Thermal stress | Oblong copper bump | Flip-chip package | Low-k layer | Embedded trace substrate | PHYSICS, APPLIED | Embedded Trace Substrate | Oblong Copper Bump | MATERIALS SCIENCE, MULTIDISCIPLINARY | Flip-Chip Package | Low-k Layer | NANOSCIENCE & NANOTECHNOLOGY | Thermal Stress | VALIDATIONS | Stress analysis | New technology | Miniaturization | Copper | Substrates
Journal Article
American Journal of Potato Research, ISSN 1099-209X, 4/2011, Volume 88, Issue 2, pp. 153 - 159
Potato (Solanum tuberosum L.) has a relatively high requirement for potassium (K+). In the face of the declining of potato yield and quality as a result of... 
Life Sciences | Plant Pathology | Potato | Low-K + tolerance | Plant Breeding/Biotechnology | Agriculture | AtCIPK23 | Plant Sciences | Potassium | Transgene | Plant Genetics & Genomics | K + uptake | Low-K | uptake | tolerance | AGRONOMY | PROTEIN-KINASE | PLANTS | ARABIDOPSIS | Low-K+ tolerance | K+ uptake
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 2009, Volume 86, Issue 7, pp. 1891 - 1893
Photocurrent spectroscopy and transient photocurrent measurements are employed in order to investigate the change in barrier heights and density of traps... 
Time-dependent dielectric breakdown | Reliability | Low- k dielectrics | Low-k dielectrics | PHYSICS, APPLIED | CONDUCTION | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Analysis | Dielectrics | Electric properties
Journal Article
Nanoscience and Nanotechnology Letters, ISSN 1941-4900, 01/2016, Volume 8, Issue 1, pp. 1 - 7
In this work, we investigated the failure mechanism of a flip-chip chip size package with a low-k layer using a copper pillar bump by experimental and... 
Copper Pillar Bump | Flip-Chip Chip Size Package | Failure | Low-k Layer | Thermo-Mechanical Stress | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | Stresses | Solders | Aluminum | Packages | Chips | Pillars | Mathematical models | Copper
Journal Article
2015 IEEE International Reliability Physics Symposium, ISSN 1541-7026, 04/2015, Volume 2015-, pp. 4C.5.1 - 4C.5.10
We investigated the impact of oxide liner elastic modulus and thickness on through-silicon via (TSV) Cu pumping and stress. A low-k dielectric liner showed a... 
Annealing | low-k dielectric liner | Stress | oxide liner | Semiconductor device modeling | TSV | Cu pumping | TSV stress | Silicon | Through-silicon via | Finite element analysis | Through-silicon vias | liner densification | Thermal stresses
Conference Proceeding
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