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physica status solidi (a), ISSN 1862-6300, 05/2018, Volume 215, Issue 9, pp. 1700645 - n/a
In this study, GaN m‐plane Schottky barrier diodes are fabricated by metalorganic vapor‐phase epitaxy (MOVPE) on several off... 
Schottky diodes | GaN | Schottky barriers | nonpolar surfaces | facets | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | JUNCTION | Circuit components | Gallium nitrate | Liquors | Electronic devices | Impurities | Gallium nitrides | Diodes | Substrates
Journal Article
Reports on progress in physics, ISSN 1361-6633, 2016, Volume 79, Issue 5, pp. 056501 - 56545
GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs... 
substrates | nonpolar | crystalline defects | light-emitting diodes | GaN | VAPOR-PHASE EPITAXY | SAPPHIRE SUBSTRATE | GALLIUM-NITRIDE | PHYSICS, MULTIDISCIPLINARY | OPTICAL-PROPERTIES | M-PLANE GAN | P-TYPE GAN | HIGH-POWER | MULTIPLE-QUANTUM WELLS | BUFFER LAYER | HIGH-QUALITY GAN | Sapphire | Gallium nitrides | Low cost | Lattices | Thermal conductivity | Light-emitting diodes | Substrates | Heat transfer
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 2005, Volume 44, Issue No. 5, pp. L173 - L175
We report the fabrication of nonpolar m-plane InGaN/GaN multiple-quantum well light-emitting diodes (LEDs... 
InGaN | Electroluminescence | M-plane | Nonpolar | Free-standing | Light-emitting diode | SAPPHIRE | PHYSICS, APPLIED | PHOTOLUMINESCENCE | free-standing | DEPENDENCE | MULTIPLE-QUANTUM WELLS | m-plane | electroluminescence | nonpolar | DEVICES | light-emitting diode | EMISSION | POLARIZATION
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2017, Volume 468, pp. 552 - 556
We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m–plane (101¯0) Gallium Nitride (GaN... 
B2. m–plane Gallium Nitride | A1. Impurities | A3. Organometallic vapor phase epitaxy | A1. Morphology | B3. Vertical Schottky barrier diodes | Electrical engineering | Liquors | Gallium nitrate | Mass spectrometry | Analysis | Electric properties
Journal Article
Nano Letters, ISSN 1530-6984, 12/2016, Volume 16, Issue 12, pp. 7779 - 7785
...) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved microphotoluminescence (μPL... 
InGaN | quantum dot | polarized | m-Plane | single photon | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICAL-PROPERTIES | ENERGY-GAP | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | WELLS | DYNAMICS
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 11/2006, Volume 45, Issue 42-45, pp. L1197 - L1199
m-Plane (1010) nonpolar InGaN-based light emitting diodes (LEDs) with no threading dislocations or stacking faults have been realized on in-plane GaN single crystals by conventional metal organic vapor phase epitaxy... 
InGaN | M-plane | Nonpolar | Light-emitting diode | Polarized light | GaN bulk substrate | SAPPHIRE | PHYSICS, APPLIED | PHOTOLUMINESCENCE | BLUE | GREEN | ELECTROLUMINESCENCE | DEPENDENCE | MULTIPLE-QUANTUM WELLS | EPITAXY | m-plane | polarized light | nonpolar | light-emitting diode | EMISSION | POLARIZATION
Journal Article
physica status solidi (a), ISSN 1862-6300, 07/2011, Volume 208, Issue 7, pp. 1532 - 1534
Photoluminescence (PL) properties are reported for a set of m‐plane GaN films with Mg doping varied from mid 1018 cm−3 to above 1020 cm−3... 
photoluminescence | Mg‐doping | m‐plane | GaN | MOCVD | nanowire | m-plane | Mg-doping | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Condensed Matter Physics | Fysik | Physical Sciences | Naturvetenskap | Den kondenserade materiens fysik | Natural Sciences
Journal Article
CrystEngComm, ISSN 1466-8033, 5/2014, Volume 16, Issue 21, pp. 4562 - 4567
A method to obtain high quality semipolar {101&cmb.macr;3&cmb.macr;} GaN grown on m -plane sapphire is presented... 
LIGHT-EMITTING-DIODES | VAPOR-PHASE EPITAXY | M-PLANE SAPPHIRE | GALLIUM NITRIDE FILMS | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | Reduction | Gallium nitrides | X-rays | Roughness | Tin | Nanostructure | Density | Defects
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 10/2007, Volume 46, Issue 36-40, pp. L960 - L962
Improved nonpolar m-plane (1100) light emitting diode (LED) with a thick InGaN active layer of 8 nm and a thick GaN barrier layer... 
Blue LED | M-plane | Nonpolar | MQW barrier thickness | GaN bulk substrate | FIELDS | PHYSICS, APPLIED | SINGLE | MOW barrier thickness | ELECTROLUMINESCENCE | m-plane | LASER-DIODES | GALLIUM NITRIDE | nonpolar | QUANTUM-WELLS | EMISSION | blue LED
Journal Article
Journal of Materials Chemistry C, ISSN 2050-7534, 11/2014, Volume 2, Issue 44, pp. 9342 - 9358
Journal Article
Journal of materials chemistry. C, Materials for optical and electronic devices, ISSN 2050-7526, 2014, Volume 2, Issue 44, pp. 9342 - 9358
GaN is a unique material with outstanding optoelectronic properties and is suitable for application in light-emitting diodes (LEDs), laser diodes (LDs... 
Journal Article
Advanced materials interfaces, ISSN 2196-7350, 2019, Volume 6, Issue 4, pp. 1801497 - n/a
The nature of specific GaN plane/water interfaces under external bias and illumination can influence photoelectrolysis efficiency using GaN nanowires. Studies of Ga‐polar, N‐polar, and m... 
surface states | c‐plane | m‐plane | GaN | photoelectrolysis | m-plane | c-plane | OXIDATION | HYDROGEN | CONTACTLESS ELECTROREFLECTANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAN SURFACES | FACE | CHEMISTRY, MULTIDISCIPLINARY | Conduction bands | Water splitting | Singularities | Gallium nitrides | Bias | Hysteresis loops | Potential barriers | Gallium oxides | Depletion | Fermi level | Photoelectrolysis | Nanowires | Chemical evolution | Localization | Deionization
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2012, Volume 100, Issue 17, pp. 172108 - 172108-4
Cathodoluminescence (CL) and transmission electron microscopy studies of homoepitaxially grown m -plane Mg-doped GaN layers are reported... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | PHOTOLUMINESCENCE | LUMINESCENCE | NONPOLAR
Journal Article
physica status solidi (a), ISSN 1862-6300, 04/2014, Volume 211, Issue 4, pp. 736 - 739
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2008, Volume 104, Issue 6, pp. 063521 - 063521-6
The strain state of the [ 1 1 ¯ 00 ] GaN quantum dots and quantum wires has been studied by a combination of multiwavelength anomalous diffraction and diffraction anomalous fine structure under grazing incidence... 
LIGHT-EMITTING-DIODES | FIELDS | PHYSICS, APPLIED | SEMICONDUCTORS | MOLECULAR-BEAM EPITAXY | ANOMALOUS-FINE-STRUCTURE | M-PLANE GAN | DIFFRACTION | STRUCTURE SPECTROSCOPY | MICROSTRUCTURE | Research | Quantum chemistry | Structure | Gallium nitrate | Anisotropy | Electric properties
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 11/2006, Volume 45, Issue 11, pp. 8644 - 8647
Journal Article
Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, 2016, Volume 16, Issue 11, pp. 11619 - 11623
Journal Article
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