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Journal of Crystal Growth, ISSN 0022-0248, 08/2019, Volume 519, pp. 77 - 83
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 07/2017, Volume 470, pp. 58 - 65
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 905 - 908
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2012, Volume 358, Issue 1, pp. 43 - 50
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2014, Volume 389, pp. 60 - 67
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2011, Volume 318, Issue 1, pp. 249 - 254
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2011, Volume 318, Issue 1, pp. 244 - 248
We have performed 3D calculations of the melt flow during Czochralski growth of nearly square-shaped silicon crystals by means of Ansys-cfx. Beforehand, the... 
A1. Computer simulation | A2. Magnetic field assisted Czochralski method | A1. Fluid flows | PHYSICS, APPLIED | Computer simulation | MELT | CONVECTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | Magnetic field assisted Czochralski method | Fluid flows | Crystal growth | Computation | Images | Crystals | Silicon | Density | Czochralski process | Melts
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2007, Volume 308, Issue 2, pp. 290 - 296
We demonstrate experimentally in a low temperature model that a rotating magnetic field (RMF) has the potential to stabilize the inverse temperature gradient... 
B2. Semiconducting III–V materials | A1. Convection | A2. Magnetic field assisted Czochralski method | B2. Semiconducting III-V materials | convection | magnetic field assisted Czochralski method | PHYSICS, APPLIED | semiconducting III-V materials | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | DRIVEN | FLOW
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2005, Volume 282, Issue 1, pp. 49 - 59
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2007, Volume 303, Issue 1, pp. 211 - 220
The set of characteristic parameters which describe modern large industrial CZ silicon single crystal growth systems is introduced. The main melt flow driving... 
A1. Stirring | A1. Computer simulation | A2. Magnetic field assisted Czochralski method | A1. Fluid flows | B2. Semiconducting silicon | magnetic field assisted Czochralski method | semiconducting silicon | fluid flows | stirring | computer simulation | CRYSTALLOGRAPHY | FLOW | LARGE CZ SYSTEM | Magnetic fields | Analysis
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2012, Volume 340, Issue 1, pp. 166 - 170
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2002, Volume 243, Issue 2, pp. 243 - 260
Journal Article
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