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2015, 1st edition., ISBN 9780199695829, xii, 516
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal... 
Molecular beam epitaxy | Semiconductors | Electronics & communications engineering | history of science and technology
Book
Nature Materials, ISSN 1476-1122, 2015, Volume 14, Issue 4, pp. 400 - 406
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical... 
ALUMINUM | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ELECTRONS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | DEVICE | CHEMISTRY, PHYSICAL | SUPERCURRENT | MAJORANA FERMIONS | QUANTUM DOTS | Superconductors | Semiconductors | Superconductivity | Electronics | Nanostructure | Epitaxial growth | Nanowires | Devices
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2016, Volume 435, pp. 56 - 61
GaSb p-i-n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution... 
A1 Atomic force microscopy | A1 Defects | A3 Molecular beam epitaxy | A1 High-resolution X-ray diffraction | B1 Antimonides | A1 Interfaces
Journal Article
CrystEngComm, 6/2018, Volume 2, Issue 24, pp. 337 - 338
In this report, we demonstrate that the use of a GaN seeding layer prepared by droplet epitaxy prior to the growth of epitaxial GaN on Si (111) can lead to the... 
Interlayers | Wurtzite | Gallium nitrides | Silicon nitride | Nanostructure | Density | Molecular chains | Transmission electron microscopy | Molecular beam epitaxy | Molecular beams | Epitaxial growth | Nanowires | Nanorods
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2017, Volume 476, pp. 58 - 63
•Thermal stability of AlN in ultra high vacuum at 1200°C.•2D to step flow transition temperature for N-rich conditions.•Influence of V/III ratio on the... 
Ammonia molecular beam epitaxy | A3. Molecular beam epitaxy | AlN on silicon | A1. Reflection high energy electron diffraction | B1. Nitrides | Aluminum compounds | Ammonia | Epitaxy | Atomic force microscopy | Nitrides
Journal Article
Nano Letters, ISSN 1530-6984, 08/2016, Volume 16, Issue 8, pp. 4895 - 4902
Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly... 
photoluminescence | GaN | nanowires | Gallium nitride | graphene substrate | TEM | SAPPHIRE | GOLD | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | GRAPHITE | NANORODS | MORPHOLOGIES | 001 SILICON | CHEMISTRY, MULTIDISCIPLINARY | GROWTH | NUCLEATION
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 27 - 33
Epitaxial β‐Ga2O3 layers have been grown on β‐Ga2O3 (100) substrates using metal‐organic vapor phase epitaxy. Trimethylgallium and pure oxygen or water were... 
Ga2O3 | transparent semiconducting oxides | metal‐organic vapor phase epitaxy | structure | thin films | metal-organic vapor phase epitaxy | SURFACE-MORPHOLOGY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | ADSORPTION | GAAS | HYDROGEN | OXIDE THIN-FILMS
Journal Article
Progress in Crystal Growth and Characterization of Materials, ISSN 0960-8974, 06/2016, Volume 62, Issue 2, pp. 302 - 316
Journal Article
2019, 1, Wiley Series in Materials for Electronic & Optoelectronic Applications, ISBN 111935501X, 512
eBook
06/2018, Second edition., ISBN 012812136X, 790
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with... 
Molecular beam epitaxy | Optoelectronic devices-Materials | Semiconductors-Materials | Semiconductors | Optoelectronic devices
eBook
Journal of Applied Physics, ISSN 0021-8979, 05/2014, Volume 115, Issue 17, p. 17
We evaluated orbital (m(orb)) and spin magnetic moments (m(spin)) of CoxFe4-xN (x - 0, 3, 4) epitaxial thin films grown by molecular beam epitaxy using x-ray... 
THIN-FILMS | PHYSICS, APPLIED | IRON | NITRIDES | GAMMA'-FE4N | Thin films | First principles | Unit cell | Dependence | Molecular beam epitaxy | Dichroism | Magnetic moments | Magnetism | Perovskites | Epitaxial growth | Cobalt | Iron nitride
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2018, Volume 481, pp. 7 - 10
Journal Article