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IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 09/2019, Volume 54, Issue 9, pp. 2402 - 2410
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 9/2019, pp. 1 - 4
In this letter, a dual-band switchable MMIC star mixer is proposed. The MMIC is fabricated in a 0.1-μm commercial GaAs pHEMT process with a chip size of 1.1 mm... 
Dual-band | Baluns | PHEMTs | Dual band | Switches | Millimeter wave radar | pHEMT | monolithic microwave integrated circuit (MMIC) | switchable | Mixers | star mixer
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 12/2014, Volume 62, Issue 12, pp. 3041 - 3052
Journal Article
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 10/2013, Volume 60, Issue 10, pp. 3592 - 3595
The potentialities of GaN monolithic technology for the growing microwave backhaul power amplifier market are discussed in this paper. To support this... 
PHYSICS, APPLIED | gallium nitride (GaN) | Doherty power amplifier | high efficiency | Backhaul | monolithic microwave integrated circuit (MMIC) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 06/2018, Volume 28, Issue 6, pp. 530 - 532
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 06/2009, Volume 19, Issue 6, pp. 413 - 415
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 12/2018, Volume 28, Issue 12, pp. 1128 - 1130
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 03/2016, Volume 64, Issue 3, pp. 826 - 835
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and... 
Cryogenic | InP HEMT | Linearity | low-noise amplifiers (LNAs) | Cryogenics | Logic gates | HEMTs | MMICs | Noise measurement | monolithic microwave integrated circuit (MMIC) | POWER | BAND | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Research | Amplifiers (Electronics) | Indium | Gates (Electronics) | Transistors | Amplification | Stability | Semiconductor devices | MMIC (circuits) | Oscillations | Wideband
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 06/2019, Volume 29, Issue 6, pp. 394 - 396
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 03/2019, Volume 29, Issue 3, pp. 228 - 230
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 9/2019, pp. 1 - 10
In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide state-of-the-art performance within the D-band (110-170 GHz) and... 
D-band (110-170 GHz) | G-band (140-220 GHz) | Broadband | gallium nitride (GaN) | power amplifier (PA) | monolithic microwave integrated circuit (MMIC) | Gallium nitride | cascode | high-electron-mobility transistor (HEMT) | millimeter wave | HEMTs | Gain measurement | Microwave circuits | Gain | Power generation
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 05/2019, Volume 29, Issue 5, pp. 336 - 338
Journal Article
IEEE Transactions on Circuits and Systems II: Express Briefs, ISSN 1549-7747, 09/2019, Volume 66, Issue 9, pp. 1517 - 1521
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2013, Volume 60, Issue 10, pp. 3592 - 3595
Journal Article
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 12/2012, Volume 60, Issue 12, pp. 4080 - 4088
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic... 
metamorphic high electron-mobility transistor (mHEMT) | mHEMTs | Cryogenics | MMICs | Logic gates | Noise shaping | Cryogenic low-noise amplifier (LNA) | monolithic microwave integrated circuit (MMIC) | Gain | BAND | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 12/2017, Volume 27, Issue 12, pp. 1119 - 1121
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 11/2016, Volume 26, Issue 11, pp. 918 - 920
A novel two-stage Doherty power amplifier (PA) was designed and fully integrated on a 0.25-μm GaN on SiC monolithic microwave integrated circuit die with a... 
Wireless communication | gallium nitride (GaN) | Doherty power amplifiers (Doherty PAs) | Linearity | Power amplifiers | MMICs | long-term evolution (LTE) | monolithic microwave integrated circuit (MMIC) | Gallium nitride | Gain | Long Term Evolution | BASE STATIONS | ENGINEERING, ELECTRICAL & ELECTRONIC | Gallium nitrides
Journal Article
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