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IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2017, Volume 64, Issue 11, pp. 4374 - 4385
Phase-change memory (PCM) has undergone significant academic and industrial research in the last 15 years. After much development, it is now poised to enter... 
Phase change materials | Resistance | Nonvolatile memory | reset energy | Optical switches | Random access memory | Phase-change memory (PCM) | thermal conductivity | thermal design | Resistance heating
Journal Article
Journal Article
Proceeding of the 41st annual international symposium on computer architecuture, ISSN 1063-6897, 06/2014, pp. 265 - 276
Emerging nonvolatile memory technologies (NVRAM) promise the performance of DRAM with the persistence of disk. However, constraining NVRAM write order,... 
Phase change materials | Software | Nonvolatile memory | Acceleration | Random access memory | Abstracts
Conference Proceeding
Materials Today, ISSN 1369-7021, 06/2016, Volume 19, Issue 5, pp. 254 - 264
Non-volatile memory (NVM) will play a decisive role in the development of the next-generation of electronic products. Therefore, the development of... 
ELECTROLYTE-BASED RERAM | HFO2-BASED RRAM | INDIUM-TIN-OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | THIN-FILM TRANSISTORS | RESISTIVE SWITCHING CHARACTERISTICS | DEVICES | NONVOLATILE MEMORY | CO2 FLUID TREATMENT | CONDUCTIVE FILAMENTS | METAL-OXIDES | Electrical engineering | Energy conservation | Flash memory | Electric properties
Journal Article
2014, 1st ed., Electronics engineering series, ISBN 1118790286, 305
Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new... 
TECHNOLOGY & ENGINEERING | General | Materials Science | Flash memories (Computers) | Computer storage devices | Nonvolatile random-access memory
eBook
Materials Today, ISSN 1369-7021, 12/2011, Volume 14, Issue 12, pp. 608 - 615
Flash nonvolatile memory has been widely applied in portable electronic products. However, traditional flash memory is expected to reach physical limits as its... 
DEVICE APPLICATIONS | HFO2 | METAL NANOCRYSTALS | OXIDE | GERMANIUM NANOCRYSTALS | NI NANOCRYSTALS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON NANOCRYSTALS | NONVOLATILE MEMORY | CHARGE STORAGE | FLOATING-GATE | Flash memory | State of the art | Nanocrystals | Electronics | Oxides | Flash memory (computers) | Portability | Floating structures | Gates
Journal Article
2014, International series on advances in solid state electronics and technology, ISBN 9789814460903, xxxiii, 274
Book
Nano Letters, ISSN 1530-6984, 06/2013, Volume 13, Issue 6, pp. 2908 - 2915
Journal Article
Journal Article
Nanotechnology, ISSN 0957-4484, 06/2011, Volume 22, Issue 25, p. 254003
This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief... 
TRANSPORT | ENERGY | SWITCHES | PHYSICS, APPLIED | FILMS | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | DEVICES | CONDUCTION | NANOSCIENCE & NANOTECHNOLOGY | NONVOLATILE MEMORY | PROGRAM
Journal Article
Advanced Materials, ISSN 0935-9648, 03/2011, Volume 23, Issue 10, pp. 1277 - 1281
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 08/2015, Volume 103, Issue 8, pp. 1289 - 1310
Journal Article