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Applied Physics Letters, ISSN 0003-6951, 09/2015, Volume 107, Issue 11, p. 113503
In this study, we developed an Ohmic contact structure to an in situ n(+)-Ge film that has an ultralow specific contact resistivity of [(6.8 +/- 2.1) x 10(-8)... 
PHYSICS, APPLIED | SOURCE/DRAIN | SEGREGATION | SCHOTTKY-BARRIER HEIGHT | Contact resistance | Work functions | Ohmic | Electrical resistivity | Interface roughness
Journal Article
Journal of Micromechanics and Microengineering, ISSN 0960-1317, 10/2012, Volume 22, Issue 10, pp. 105005 - 12
We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au-Au, Au-Ir, and Au-Pt contact materials... 
NANOSCIENCE & NANOTECHNOLOGY | INSTRUMENTS & INSTRUMENTATION | MECHANICS | METAL CONTACTS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC | Gold | Ohmic | Catalysts | Switches | Cleaning | Catalysis | Failure | Contact
Journal Article
Materials Today, ISSN 1369-7021, 03/2015, Volume 18, Issue 2, pp. 79 - 96
Organic field-effect transistors (OFETs) are promising for numerous potential applications but suffer from poor charge injection, such that their performance... 
HIGH-PERFORMANCE | INTERFACE DIPOLE | GRAPHENE OXIDE ELECTRODES | SELF-ASSEMBLED MONOLAYERS | HOLE-INJECTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | METAL WORK FUNCTION | THIN-FILM TRANSISTORS | ENERGY-LEVEL ALIGNMENT | GATE VOLTAGE | CHARGE INJECTION | Circuit components | Field-effect transistors
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 08/2018, Volume 10, Issue 31, pp. 26378 - 26386
Journal Article
Chemical Society Reviews, ISSN 0306-0012, 5/2018, Volume 47, Issue 9, pp. 337 - 358
Over the past decade, the field of two-dimensional (2D) layered materials has surged, promising a new platform for studying diverse physical phenomena that are... 
FEW-LAYER | MONOLAYER MOS2 | INTERFACE | SCHOTTKY | MOBILITY | RESISTANCE | METAL CONTACTS | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | GRAPHENE DEVICES | BAND-GAP | Interlayers | Layered materials | Two dimensional materials | Ohmic
Journal Article
Journal of Micromechanics and Microengineering, ISSN 0960-1317, 10/2013, Volume 23, Issue 10, pp. 103001 - 16
Journal Article
1988, 2nd ed., ISBN 9780198593362, xiii, 252
Book
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( fT ) of 370 GHz. The... 
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | INALN/GAN HEMTS | f(T) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2014, Volume 104, Issue 11, p. 112101
Experimental evidence of reduction of ultrathin TiO2 by Ti is presented and its effect on Fermi level depinning and contact resistivity reduction to Si is... 
PHYSICS, APPLIED | Interlayers | Ohmic | Contact resistance | Insulators | Substrates | Reduction (metal working) | Reduction | Fermi level | Electrical resistivity | Correlation analysis | Barriers | Titanium | Silicon | Titanium dioxide
Journal Article
by Chen, JX and Li, XX and Ma, HP and Huang, W and Ji, ZG and Xia, CT and Lu, HL and Zhang, DW
ACS APPLIED MATERIALS & INTERFACES, ISSN 1944-8244, 09/2019, Volume 11, Issue 35, pp. 32127 - 32134
The issue of contacts between the electrode and channel layer is crucial for wide-bandgap semiconductors, especially the beta-Ga2O3 due to its ultra-large... 
SINGLE-CRYSTALS | Ohmic contact | MATERIALS SCIENCE, MULTIDISCIPLINARY | multilayer metal stack | GROWTH | gallium oxide | POWER | NANOSCIENCE & NANOTECHNOLOGY | wide-bandgap semiconductors | field-effect transistors | EDGE | oxygen vacancies
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 2018, Volume 20, Issue 38, pp. 24641 - 24651
Owing to their few lateral dangling bonds and enhanced gate electrostatics, two-dimensional semiconductors have attracted much attention for the fabrication of... 
SILICENE | BANDGAP | MOBILITY | PERFORMANCE | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | BARRIERS | PHOSPHORENE | ELECTRICAL CONTACTS | FIELD-EFFECT TRANSISTORS | INTERFACIAL PROPERTIES | ARSENENE
Journal Article
Nano Letters, ISSN 1530-6984, 09/2013, Volume 13, Issue 9, pp. 4001 - 4005
Journal Article
18.