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1. Full Text Solar Hydrogen Generation by Nanoscale p–n Junction of p‑type Molybdenum Disulfide/n‑type Nitrogen-Doped Reduced Graphene Oxide
by Meng, Fanke and Li, Jiangtian and Cushing, Scott K and Zhi, Mingjia and Wu, Nianqiang
Journal of the American Chemical Society, ISSN 0002-7863, 07/2013, Volume 135, Issue 28, pp. 10286 - 10289
Molybdenum disulfide (MoS2) is a promising candidate for solar hydrogen generation but it alone has negligible photocatalytic activity. In this work, 5–20 nm... 
NANOPARTICLES | SEMICONDUCTOR | PHOTOCATALYTIC H-2 EVOLUTION | REDUCTION | MOS2 | CATALYST | COCATALYST | EFFICIENT | SHEETS | CHEMISTRY, MULTIDISCIPLINARY | WATER | Molybdenum - chemistry | Particle Size | Electric Power Supplies | Nitrogen - chemistry | Oxidation-Reduction | Disulfides - chemistry | Oxides - chemistry | Surface Properties | Nanostructures - chemistry | Graphite - chemistry | Hydrogen - chemistry | Thermal properties | Infrared spectroscopy | Usage | Graphene | Photocatalysis | Analysis | Innovations | P-N junctions | Chemical properties | Research
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2. The PN junction diode
by Neudeck, Gerold W
1983, Modular series on solid state devices, ISBN 0201053217, Volume 2, vii, 120
Diodes, Semiconductor
Book
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3. The PN junction diode
by Neudeck, Gerold W
1989, 2nd ed., ISBN 9780201122961, ix, 180
Diodes, Semiconductor
Book
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4. Full Text Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell
by Jampana, B.R and Melton, A.G and Jamil, M and Faleev, N.N and Opila, R.L and Ferguson, I.T and Honsberg, C.B
IEEE Electron Device Letters, ISSN 0741-3106, 01/2010, Volume 31, Issue 1, pp. 32 - 34
The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the... 
Photovoltaic systems | Photoluminescence | X-ray diffraction | Indium | InGaN solar cell | X-ray imaging | Fabrication | Photovoltaic cells | Lighting | Voltage | Current density | solar cell | P-n junctions | Solar cell | ENGINEERING, ELECTRICAL & ELECTRONIC
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5. Full Text Gate-Activated Photoresponse in a Graphene p–n Junction
by Lemme, Max C and Koppens, Frank H. L and Falk, Abram L and Rudner, Mark S and Park, Hongkun and Levitov, Leonid S and Marcus, Charles M
Nano Letters, ISSN 1530-6984, 10/2011, Volume 11, Issue 10, pp. 4134 - 4137
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that... 
photo-detection | thermoelectricity | grapheme | p-n junction | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | graphene | Landscapes | Photocurrent | Graphene | Infrared imaging | Polarity | Nanostructure | Active control | Gates | P-n junctions | Engineering and Technology | Teknik och teknologier | Nanoteknik | Nano Technology
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6. Full Text Record High Efficiency Single-Walled Carbon Nanotube/Silicon p–n Junction Solar Cells
by Jung, Yeonwoong and Li, Xiaokai and Rajan, Nitin K and Taylor, André D and Reed, Mark A
Nano Letters, ISSN 1530-6984, 01/2013, Volume 13, Issue 1, pp. 95 - 99
Carrier transport characteristics in high-efficiency single-walled carbon nanotubes (SWNTs)/silicon (Si) hybrid solar cells are presented. The solar cells were... 
high efficiency | hybrid solar cell | temperature dependency | CNT/Si solar cell | photovoltaics | ideality factor | HETEROJUNCTION | RECOMBINATION | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | DENSITY | PHOTOVOLTAIC PROPERTIES | LAYER | Solar cells | Current carriers | Photovoltaic cells | Silicon | Current density | Carrier density | Carrier transport | Single wall carbon nanotubes | P-n junctions
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7. Full Text Atomically thin p-n junctions with van der Waals heterointerfaces
by Lee, Chul-Ho and Lee, Gwan-Hyoung and Van Der Zande, Arend M and Chen, Wenchao and Li, Yilei and Han, Minyong and Cui, Xu and Arefe, Ghidewon and Nuckolls, Colin and Heinz, Tony F and Guo, Jing and Hone, James and Kim, Philip
Nature Nanotechnology, ISSN 1748-3387, 2014, Volume 9, Issue 9, pp. 676 - 681
Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices(1,2). In conventional p-n junctions, regions depleted of... 
WSE2 | MONOLAYER MOS2 | FILMS | HETEROSTRUCTURES | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | SINGLE-LAYER MOS2 | NANOSCIENCE & NANOTECHNOLOGY | GENERATION | 2D CRYSTALS | DIODES | Depletion | Semiconductors | Graphene | Heterojunctions | Electronics | Optoelectronic devices | Heterostructures | P-n junctions | Physics - Mesoscale and Nanoscale Physics
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8. Full Text Interlayer Exciton Optoelectronics in a 2D Heterostructure p–n Junction
by Ross, Jason S and Rivera, Pasqual and Schaibley, John and Lee-Wong, Eric and Yu, Hongyi and Taniguchi, Takashi and Watanabe, Kenji and Yan, Jiaqiang and Mandrus, David and Cobden, David and Yao, Wang and Xu, Xiaodong and Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Nano Letters, ISSN 1530-6984, 02/2017, Volume 17, Issue 2, pp. 638 - 643
Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals... 
interlayer exciton | van der Waals heterostructure | p−n junction | transition metal dichalcogenides | optoelectronics | HETEROJUNCTION | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SEMICONDUCTOR | DIRAC FERMIONS | MOS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | MONOLAYER WSE2 | ELECTROLUMINESCENCE | LIGHT-EMITTING-DIODES | SUPERLATTICES | GENERATION | p-n junction | DER-WAALS HETEROSTRUCTURE | Physics - Mesoscale and Nanoscale Physics | INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY | MATERIALS SCIENCE
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9. Full Text Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
by Choi, Min Sup and Qu, Deshun and Lee, Daeyeong and Liu, Xiaochi and Watanabe, Kenji and Taniguchi, Takashi and Yoo, Won Jong
ACS Nano, ISSN 1936-0851, 09/2014, Volume 8, Issue 9, pp. 9332 - 9340
This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p–n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated... 
homogeneous p-n junction | molybdenum disulfide | two-dimensional materials | lateral junction | chemical doping | optoelectronics | THIN-FILMS | MONOLAYER MOS2 | LAYERED MATERIALS | PHOTORESPONSE | MOLYBDENUM-DISULFIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | GRAPHENE HETEROSTRUCTURES | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | PHOTODETECTORS | PHOTOTRANSISTORS | MEMORY DEVICES
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10. Full Text High‐Sensitivity p–n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots
by Pal, Bhola N and Robel, Istvan and Mohite, Aditya and Laocharoensuk, Rawiwan and Werder, Donald J and Klimov, Victor I
Advanced Functional Materials, ISSN 1616-301X, 04/2012, Volume 22, Issue 8, pp. 1741 - 1748
Chemically synthesized nanocrystal quantum dots (NQDs) are promising materials for applications in solution‐processable optoelectronic devices such as light... 
PbS | mid‐gap band | p–n junction | detectivity | photodetector | nanocrystal quantum dot | mid-gap band | p-n junction | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | COMPOSITES | AIR | CHEMISTRY, MULTIDISCIPLINARY | FILMS | INFRARED PHOTODETECTORS | PHOTOVOLTAICS
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11. Full Text Single-Molecule Conductance of Functionalized Oligoynes: Length Dependence and Junction Evolution
by Moreno-García, Pavel and Gulcur, Murat and Manrique, David Zsolt and Pope, Thomas and Hong, Wenjing and Kaliginedi, Veerabhadrarao and Huang, Cancan and Batsanov, Andrei S and Bryce, Martin R and Lambert, Colin and Wandlowski, Thomas
Journal of the American Chemical Society, ISSN 0002-7863, 08/2013, Volume 135, Issue 33, pp. 12228 - 12240
We report a combined experimental and theoretical investigation of the length dependence and anchor group dependence of the electrical conductance of a series... 
WIRES | ATOMIC-FORCE MICROSCOPY | CARBON | ANCHORING GROUPS | RESISTANCE | MODEL | CHEMISTRY, MULTIDISCIPLINARY | ELECTRICAL CONDUCTANCE | Usage | Chemical reaction, Rate of | Analysis | Innovations | P-N junctions | Research | Light-emitting diodes | Semiconductor doping | Methods
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12. Full Text Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor
by Zhang, Y. J and Ye, J. T and Yomogida, Y and Takenobu, T and Iwasa, Y
Nano Letters, ISSN 1530-6984, 07/2013, Volume 13, Issue 7, pp. 3023 - 3028
Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single... 
Molybdenum disulfide | electric double-layer transistor | ambipolar | p-n junction | PHYSICS, CONDENSED MATTER | MONOLAYER MOS2 | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | LIGHT-EMITTING TRANSISTORS | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | SINGLE-CRYSTAL | THIN-FILM TRANSISTORS | VALLEY POLARIZATION | EMISSION
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13. Full Text Light-Controlled Organic/Inorganic P−N Junction Nanowires
by Guo, Yanbing and Tang, Qingxin and Liu, Huibiao and Zhang, Yajie and Li, Yuliang and Hu, Wenping and Wang, Shu and Zhu, Daoben
Journal of the American Chemical Society, ISSN 0002-7863, 07/2008, Volume 130, Issue 29, pp. 9198 - 9199
P−N junctions are of great importance both in modern electronic applications and in understanding other semiconductor devices. Organic/inorganic P−N junction... 
CHEMISTRY, MULTIDISCIPLINARY | FABRICATION | DIODES | P-N junctions | Research | Optical properties | Nanotechnology | Electric properties
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14. Full Text Experimental Realization of a Topological p–n Junction by Intrinsic Defect Grading
by Bathon, Thomas and Achilli, Simona and Sessi, Paolo and Golyashov, Vladimir Andreevich and Kokh, Konstantin Aleksandrovich and Tereshchenko, Oleg Evgenievich and Bode, Matthias
Advanced Materials, ISSN 0935-9648, 03/2016, Volume 28, Issue 11, pp. 2183 - 2188
A Bi2Te3 single crystal is grown with the modified Bridgman technique. The crystal has a nominal composition with a Te content of 61 mol% resulting in the... 
p–n junctions | transport | topological insulators | scanning tunneling microscopy | density functional theory | p-n junctions | SURFACE-STATES | PHYSICS, CONDENSED MATTER | TRANSPORT | PHYSICS, APPLIED | INSULATOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALS | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | BI2TE3 | CHEMISTRY, MULTIDISCIPLINARY | Crystal growth | Single crystals | Crystal defects | Crystals | Spectra | Topology | Bridgman method | P-n junctions | Physics - Mesoscale and Nanoscale Physics
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15. Full Text High Performance Nanostructured Silicon–Organic Quasi p–n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer
by Liu, Yuqiang and Zhang, Zhi-guo and Xia, Zhouhui and Zhang, Jie and Liu, Yuan and Liang, Feng and Li, Yongfang and Song, Tao and Yu, Xuegong and Lee, Shuit-tong and Sun, Baoquan
ACS Nano, ISSN 1936-0851, 01/2016, Volume 10, Issue 1, pp. 704 - 712
Silicon–organic solar cells based on conjugated polymers such as poly­(3,4-ethylene­dioxy­thiophene):poly­(styrene­sulfonate) (PEDOT:PSS) on n-type silicon... 
Quasi P-N junction | HAT-CN | PDIN | Silicon-organic solar cell | Inversion layer | quasi p-n junction | RECOMBINATION | INTERLAYER | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | silicon-organic solar cell | DEVICES | inversion layer | HIGH-EFFICIENCY | CURRENT-VOLTAGE CHARACTERISTICS
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16. Full Text Two-dimensional non-volatile programmable p-n junctions
by Li, Dong and Chen, Mingyuan and Sun, Zhengzong and Yu, Peng and Liu, Zheng and Ajayan, Pulickel M and Zhang, Zengxing
Nature Nanotechnology, ISSN 1748-3387, 09/2017, Volume 12, Issue 9, pp. 901 - 906
Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled... 
TRANSISTORS | PHOTORESPONSE | HETEROSTRUCTURES | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | LAYER MOS2 | GRAPHENE | NANOSCIENCE & NANOTECHNOLOGY | GENERATION | DIODE | PHOSPHORENE | DER-WAALS HETEROJUNCTION | Solar cells | Electronic devices | Circuits | Field effect transistors | Boron nitride | Implantation | Optoelectronic devices | Thickness | Boron | Photovoltaic cells | Rectifiers | Miniaturization | P-n junctions | Photovoltaics | Energy conversion efficiency
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17. Full Text A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS2 Nanosheet Array to Enable Efficient Solar Water Oxidation
by Meng, Linxing and Zhou, Xiaolong and Wang, Siyu and Zhou, Yu and Tian, Wei and Kidkhunthod, Pinit and Tunmee, Sarayut and Tang, Yongbing and Long, Run and Xin, Yu and Li, Liang
Angewandte Chemie International Edition, ISSN 1433-7851, 11/2019, Volume 58, Issue 46, pp. 16668 - 16675
A photoelectrochemical (PEC) cell can split water into hydrogen and oxygen with the assistance of solar illumination. However, its application is still limited... 
O-S bonds | P-N junctions | SnS2 | photoanodes | Plasma | Optoelectronics | Recombination | Oxygen | Carrier recombination | Nanostructure | Organic chemistry | Photoelectric effect | Reaction kinetics | Tin disulfide | Heterojunctions | Oxidation | Chemical evolution | Arrays | Photoelectric emission | P-n junctions
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18. Full Text Fabrication of NiS modified CdS nanorod p-n junction photocatalysts with enhanced visible-light photocatalytic H2-production activity
by Zhang, Jun and Qiao, Shi Zhang and Qi, Lifang and Yu, Jiaguo
Physical Chemistry Chemical Physics, ISSN 1463-9076, 08/2013, Volume 15, Issue 29, pp. 12088 - 12094
Production of hydrogen from photocatalytic water splitting has become an attractive research area due to the possibility of converting solar energy into green... 
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19. Full Text Photoelectrochemical performance enhanced by a nickel oxide-hematite p-n junction photoanode
by Li, Jiangtian and Meng, Fanke and Suri, Savan and Ding, Weiqiang and Huang, Fuqiang and Wu, Nianqiang
Chemical Communications, ISSN 1359-7345, 08/2012, Volume 48, Issue 66, pp. 8213 - 8215
A p-n junction photoanode has been fabricated by depositing p-type NiO nanoparticles on the n-type hematite thin film. Such a photoanode is employed for a... 
ELECTRODES | WATER OXIDATION | FILMS | CHEMISTRY, MULTIDISCIPLINARY | ARRAYS | Hematite | Nanoparticles | Thin films | Evolution | Extraction |