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IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 05/2009, Volume 44, Issue 5, pp. 1372 - 1379
Journal Article
by Ma, KX and Kumar, TB and Yeo, KS
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, ISSN 0018-9480, 12/2015, Volume 63, Issue 12, pp. 4395 - 4405
This paper presents a high power efficient broad-band programmable gain amplifier with multi-band switching. The proposed two stage common-emitter amplifier,... 
transformer coupled load | Current reuse | dual band | SiGe BiCMOS | variable gain amplifier (VGA) | Ka-band | TRANSFORMERS | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | K-band | power added efficiency (PAE) | GHZ | tunable amplifier
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 03/2015, Volume 25, Issue 3, pp. 187 - 189
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 08/2012, Volume 60, Issue 8, pp. 2581 - 2589
Journal Article
Solid State Electronics, ISSN 0038-1101, 11/2015, Volume 113, pp. 49 - 53
We report on AlN/GaN double heterostructures for high frequency applications. 600h preliminary reliability assessment has been performed on these emerging RF... 
Power-added-efficiency (PAE) | Reliability | AlN/GaN DHFET | RF power | Load-pull | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ELECTRON-MOBILITY TRANSISTORS | HEMTS | MECHANISMS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, ISSN 0018-9480, 01/2016, Volume 64, Issue 1, pp. 200 - 209
This paper describes the first linear multistage class-J power amplifier (PA) fabricated in a 2-mu m InGaP/GaAs HBT process for multi-band long-term evolution... 
gallium-arsenide (GaAs) | DESIGN | power-added efficiency (PAE) | power amplifier (PA) | quadrature amplitude modulation (QAM) | long-term evolution (LTE) | HIGH-EFFICIENCY | MULTIMODE | Adjacent channel leakage ratio (ACLR) | error vector magnitude (EVM) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 11/2017, Volume 64, Issue 11, pp. 2844 - 2857
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 12/2015, Volume 63, Issue 12, pp. 4395 - 4405
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 01/2016, Volume 64, Issue 1, pp. 200 - 209
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 12/2015, Volume 63, Issue 12, pp. 4395 - 4405
This paper presents a high power efficient broad-band programmable gain amplifier with multi-band switching. The proposed two stage common-emitter amplifier,... 
Varactors | transformer coupled load | Current reuse | dual band | SiGe BiCMOS | variable gain amplifier (VGA) | Circuit faults | Gain control | Ka -band | Inductance | Impedance matching | power added efficiency (PAE) | tunable amplifier | K -band | Impedance | Gain
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 08/2008, Volume 29, Issue 8, pp. 834 - 837
We report small- and large-signal performances of 140-nm gatelength field-plated GaN HEMTs at Ka-band frequencies, in which the GaN HEMTs were fabricated with... 
microwave devices | millimeter wave power FETs | power-added-efficiency (PAE) | RESISTANCE | HEMTS | gallium nitride | high electron mobility transistor (HEMT) | Ka-band | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
中国物理B:英文版, ISSN 1674-1056, 2015, Volume 24, Issue 10, pp. 438 - 442
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 12/2016, Volume 51, Issue 12, pp. 3020 - 3036
Journal Article
Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, 6/2014, Volume 79, Issue 3, pp. 427 - 435
A 24 GHz power amplifier for direct-conversion transceiver using standard 0.18 μm CMOS technology is reported. The three-stage power amplifier comprises two... 
Engineering | CMOS | 24 GHz | Power added efficiency | Signal, Image and Speech Processing | Circuits and Systems | Power amplifier | Saturated output power | Electrical Engineering | 24 GHz
Journal Article
IEEE Access, ISSN 2169-3536, 2019, Volume 7, pp. 158808 - 158819
This paper presents a comprehensive design of a fully integrated multistage GaAs HBT power amplifier that achieves both linearity and high efficiency within a... 
phase | analog pre-distorter (APD) | linearizer | sub-GHz | 5G mobile communication | Gallium arsenide | Gallium–Arsenide (GaAs) | hetero-junction bipolar transistor (HBT) | Power amplifiers | Linearity | power added efficiency (PAE) | Avalanche photodiodes | Heterojunction bipolar transistors | multi stage | Power amplifier | Power generation
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 11/2010, Volume 20, Issue 11, pp. 637 - 639
Journal Article
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