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2014, Selected topics in electronics and systems, ISBN 9789814583183, Volume 54, vii, 195
Book
IEEE Transactions on Power Electronics, ISSN 0885-8993, 10/2016, Volume 31, Issue 10, pp. 7183 - 7193
Journal Article
SAE technical paper series, Volume 2015-01-1204.
Electromagnetic interference (EMI) is a common problem in power electronics systems. Pulse-width modulation (PWM) control of semiconductor devices in a power... 
Semiconductor devices | Electromagnetic compatibility | Electric vehicles | Vehicle drive systems
eJournal
Journal Article
Nanoscale, ISSN 2040-3364, 09/2011, Volume 3, Issue 9, pp. 3833 - 3840
We report the development of physics based models for resistive random-access memory (RRAM) devices. The models are based on a generalized memristive system... 
PHYSICS, APPLIED | NANOFILAMENTS | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | SWITCHING MEMORY | RESISTANCE | SYSTEMS | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | MEMRISTOR | Models, Theoretical | Semiconductors - instrumentation | Algorithms | Equipment Design - instrumentation | Electricity
Journal Article
10/2017, Series in optics and optoelectronics, ISBN 9781498749565, Volume 27
Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes (LEDs) in many household appliances to solar cells for energy. This... 
Solar cells | Optoelectronic devices | Nanostructures | Semiconductors | Modulators (Electronics)
eBook
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2016, Volume 63, Issue 3, pp. 1195 - 1201
We present here and in the companion paper (Part II) a general framework for the modeling of semiconductor device variability through the physics-based... 
Performance evaluation | Analytical models | Numerical simulations | Sensitivity analysis | semiconductor device modeling | Harmonic analysis | Numerical models | sensitivity | Mathematical model | variability | Potential theory (Mathematics) | Usage | Dynamic tests | Semiconductor devices | Dynamics | Doping | Mathematical models | Modelling | Devices
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2016, Volume 63, Issue 3, pp. 1202 - 1208
We present here and in Part I a general framework for the modeling of semiconductor device variability through the physics-based analysis of the small-change... 
Numerical simulations | Sensitivity analysis | semiconductor device modeling | Harmonic analysis | Amplitude modulation | Generators | sensitivity | Mathematical model | Admittance | variability | DESIGN | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Case studies | Semiconductor devices | Gallium nitrides | Modelling | Terminals | Devices | Conversion | Electrical impedance
Journal Article
01/2019, ISBN 3039212265
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to... 
quantum mechanical | n/a | neuromorphic computation | off-current (Ioff) | double-gate tunnel field-effect-transistor | topological insulator | back current blocking layer (BCBL) | CMOS power amplifier IC | information integration | distributed Bragg | spike-timing-dependent plasticity | electron affinity | enhancement-mode | current collapse | gallium nitride (GaN) | band-to-band tunneling | vertical field-effect transistor (VFET) | ionic liquid | luminescent centres | thermal coupling | vision localization | PC1D | UAV | ZnO/Si | dual-switching transistor | memristor | field-effect transistor | higher order synchronization | shallow trench isolation (STI) | memristive device | on-current (Ion) | low voltage | reflection transmision method | dielectric layer | source/drain (S/D) | high efficiency | nanostructure synthesis | InAlN/GaN heterostructure | supercapacitor | high-electron mobility transistor (HEMTs) | metal transition (IMT) | heterojunction | p-GaN | recessed channel array transistor (RCAT) | gate field effect | charge injection | saddle FinFET (S-FinFET) | L-shaped tunnel field-effect-transistor | conductivity | energy storage | hierarchical | PECVD | sample grating | MISHEMT | bistability | threshold voltage (VTH) | bandgap tuning | oscillatory neural networks | UV irradiation | Mott transition | third harmonic tuning | topological magnetoelectric effect | cross-gain modulation | 2D material | solar cells | silicon on insulator (SOI) | Green’s function | optoelectronic devices | semiconductor optical amplifier | ZnO films | graphene | AlGaN/GaN | polarization effect | two-photon process | conductive atomic force microscopy (cAFM) | 2DEG density | vanadium dioxide | interface traps | potential drop width (PDW) | insulator | pattern recognition | drain-induced barrier lowering (DIBL) | atomic layer deposition (ALD) | normally off power devices | gate-induced drain leakage (GIDL) | zinc oxide | synaptic device | subthreshold slope (SS) | landing | silicon | corner-effect | conditioned reflex | quantum dot | gallium nitride | bismuth ions | conduction band offset | variational form
eBook
IEEE Electron Device Letters, ISSN 0741-3106, 11/2018, Volume 39, Issue 11, pp. 1784 - 1787
Journal Article
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