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IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2019, Volume 66, Issue 10, pp. 4331 - 4336
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 09/2010, Volume 45, Issue 9, pp. 1644 - 1656
The iterative design of an integrated subharmonic receiver for 120-127 GHz is presented. The receiver consists of a single-ended low-noise amplifier (LNA), a... 
millimeter-wave circuits | Noise | Receivers | Low-noise amplifier (LNA) | Noise measurement | Mixers | Oscillators | Silicon germanium | subharmonic mixer | 122 GHz | voltage-controlled oscillator (VCO) | Gain | SiGe technology | TRANSCEIVER | WAVE | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric potential | Noise levels | Bandwidth | Dividers | Amplifiers | Silicon germanides
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 05/2009, Volume 44, Issue 5, pp. 1498 - 1509
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 05/2010, Volume 58, Issue 5, pp. 1420 - 1430
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2013, Volume 60, Issue 1, pp. 396 - 404
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 10/2009, Volume 80, Issue 15
Nanocomposite thermoelectric materials have attracted much attention recently due to experimental demonstrations of improved thermoelectric properties over... 
QUANTUM-DOT SUPERLATTICE | MONTE-CARLO | BULK ALLOYS | PHYSICS, CONDENSED MATTER | TRANSPORT-PROPERTIES | FIGURE-OF-MERIT | SEMICONDUCTORS | POLYCRYSTALLINE SILICON | ELECTRICAL PROPERTIES | THERMAL-CONDUCTIVITY | SILICON-GERMANIUM ALLOYS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2013, Volume 60, Issue 8, pp. 2479 - 2484
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 05/2008, Volume 43, Issue 5, pp. 1087 - 1100
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 151 - 153
We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An... 
Performance evaluation | Cryogenic | BiCMOS | Cooling | terahertz | Cryogenics | SiGe HBT | BiCMOS integrated circuits | Heterojunction bipolar transistors | Silicon germanium | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2009, Volume 30, Issue 3, pp. 285 - 287
Journal Article
Cryogenics, ISSN 0011-2275, 04/2019, Volume 99, pp. 18 - 24
The performance of silicon-germanium (SiGe) transistors under cryogenic operation is analysed. The design and characterization of a 3–14 GHz low-noise... 
Cryogenic | Low-noise amplifier (LNA) | Silicon-Germanium (SiGe) | Bipolar transistor | PHYSICS, APPLIED | THERMODYNAMICS | LNAS | HBT | Silicon compounds | Silicon | Transistors | Analysis | Bipolar transistors | Noise levels | Semiconductor devices | Noise | Amplifiers | Cryogenic temperature | Amplification | Power consumption | Energy dissipation | Ambient temperature | Noise temperature | Silicon germanides
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2017, Volume 64, Issue 5, pp. 2092 - 2098
Journal Article
Optics Express, ISSN 1094-4087, 11/2015, Volume 23, Issue 24, pp. 30821 - 30826
The integration of germanium (Ge)-rich active devices in photonic integrated circuits is challenging due to the lattice mismatch between silicon (Si) and Ge. A... 
OPTICS | SILICON-GERMANIUM | REDUCTION | LOW-POWER | Photonic | Optics | Engineering Sciences | Physics
Journal Article
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