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IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 06/2014, Volume 62, Issue 6, pp. 1301 - 1311
Journal Article
2014, Woodhead Publishing Series in Electronic and Optical Materials, ISBN 0857095269, Volume Number 58
Web Resource
2014, Woodhead Publishing Series in Electronic and Optical Materials, ISBN 0857095269, Volume Number 58
Web Resource
2014, Woodhead Publishing Series in Electronic and Optical Materials, ISBN 0857095269, Volume Number 58
Web Resource
2017, Synthesis Lectures on Emerging Engineering Technologies, ISBN 1627056963, Volume Lecture 9
Web Resource
IEEE Electron Device Letters, ISSN 0741-3106, 11/2018, Volume 39, Issue 11, pp. 1728 - 1731
The total ionizing dose (TID) is a mechanism that threatens the reliability of transistors under radiation. In the literature, we found contradictory TID... 
Degradation | Ring oscillators | total ionize dose | Radiation effects | Silicon-on-insulator | Logic gates | buried oxide | positive trapped charge | Transistors | ring oscillator | Stress | Fully-depleted silicon-on-insulator | DEVICES | ENGINEERING, ELECTRICAL & ELECTRONIC | Gamma rays | CMOS | Circuit design | Semiconductor devices | Silicon | Performance degradation | Silicon dioxide
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2018, Volume 39, Issue 6, pp. 795 - 798
For partially depleted (PD) silicon-on-insulator (SOI) technology, body contact technology, such as T-gate (TB) body contact, is often used to suppress the... 
Radio frequency | Performance evaluation | MOSFET | Electric potential | body potential | Silicon-on-insulator | four-port network | Logic gates | Capacitance | cut-off frequency | Tuning | SUBSTRATE | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 9/2019, pp. 1 - 4
A 6-bit digital phase shifter in 0.18-μm silicon-on-insulator (SOI) process is presented. It operates over a 4-7-GHz frequency band and provides 360° of phase... 
digital | phased array | C-band | Phase shifters | PHEMTs | Silicon-on-insulator | Switches | Frequency measurement | IP3 | phase error | silicon-on-insulator (SOI) | phase shifter | Phased arrays | silicon | Linearity
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 08/2013, Volume 718, pp. 274 - 278
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2015, Volume 62, Issue 6, pp. 1970 - 1976
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2016, Volume 63, Issue 5, pp. 1969 - 1976
A high-voltage lateral double-diffused MOSFET with N-island (NIS) and step-doped drift (SDD) region in partial silicon-on-insulator (PSOI) technology is... 
MOSFET | Breakdown voltage (BV) | Silicon-on-insulator | step-doped drift (SDD) region | Doping | Silicon | System-on-chip | Permittivity | Substrates | lateral double-diffused MOS (LDMOS) | N-island (NIS) | partial silicon-on-insulator (PSOI) | Electric fields
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/1997, Volume 44, Issue 12, pp. 2252 - 2261
Journal Article
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