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1. Single event effects in aerospace
by Petersen, Edward
2011, 1st ed., ISBN 9780470767498, xiii, 502
Electromagnetic pulse | Electronic apparatus and appliances | Protection | Astrionics | Effect of radiation on | Semiconductors | Electronics | ECHNOLOGY & ENGINEERING
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2. Full Text Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
by Tonfat, Jorge and Lima Kastensmidt, Fernanda and Artola, Laurent and Hubert, Guillaume and Medina, Nilberto H and Added, Nemitala and Aguiar, Vitor A. P and Aguirre, Fernando and Macchione, Eduardo L. A and Silveira, Marcilei A. G
IEEE transactions on nuclear science, ISSN 0018-9499, 08/2017, Volume 64, Issue 8, pp. 2161 - 2168
Sensitivity | single-event effects (SEEs) | Field-programmable gate array (FPGA) | multiple bit upset (MBU) | Organizations | Tools | layout analysis | Ions | SRAM cells | soft errors | Field programmable gate arrays | Engineering, Electrical & Electronic | Engineering | Technology | Nuclear Science & Technology | Science & Technology | Energy transformation | Usage | Ionizing radiation | Heavy ions | Digital integrated circuits | Random access memory | Reports | Research | Static random access memory | Memory cells | Single Event Effects | Radiation | Data processing | Rotation | Linear energy transfer (LET) | Irradiation | Incidence angle | Energy transfer | Instrumentation and Detectors | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Physics
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3. Full Text An infrastructure for accurate characterization of single-event transients in digital circuits
by Savulimedu Veeravalli, Varadan and Polzer, Thomas and Schmid, Ulrich and Steininger, Andreas and Hofbauer, Michael and Schweiger, Kurt and Dietrich, Horst and Schneider-Hornstein, Kerstin and Zimmermann, Horst and Voss, Kay-Obbe and Merk, Bruno and Hajek, Michael
Microprocessors and microsystems, ISSN 0141-9331, 11/2013, Volume 37, Issue 8, pp. 772 - 791
Elastic pipelines | Single-event transients | Asynchronous digital design | Single-event upsets | Muller C-elements | Radiation fault-tolerance | SET injection experiments | LFSR counters | Spice models | TCAD models | Ion beam radiation
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4. Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout
by Zhang, Zhan-Gang and Liu, Jie and Hou, Ming-Dong and Sun, You-Mei and Su, Hong and Gu, Song and Geng, Chao and Yao, Hui-Jun and Luo, Jie and Duan, Jing-Lai and Mo, Dan and Xi, Kai and En, Yun-Fei
Nuclear science and techniques, ISSN 1001-8042, 09/2015, Volume 26, Issue 5
Dual interlocked cell | Azimuth | Single event upset | Multiple-bit upset | Physical Sciences | Physics, Nuclear | Technology | Nuclear Science & Technology | Physics | Science & Technology
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5. Full Text Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices
by Liang HE Hua CHEN Peng SUN Xiaofei JIA Chongguang DAI Jing LIU Long SHAO Zhaoqing LIU
Science China. Information sciences, ISSN 1674-733X, 2016, Volume 59, Issue 4, pp. 52 - 62
收集装置 | 超深亚微米 | 单粒子翻转率 | 深亚微米CMOS | 互补金属氧化物半导体 | 半导体器件 | 载流子收集 | 模型改进 | ultra-deep submicron | complementary metal-oxide-semiconductor devices | single event | Computer Science | upset rates | charge sharing | Information Systems and Communication Service | Computer Science, Information Systems | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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6. Full Text Improving Combinational Circuit Reliability Against Multiple Event Transients via a Partition and Restructuring Approach
by Rohanipoor, Mohammad Reza and Ghavami, Behnam and Raji, Mohsen
IEEE transactions on computer-aided design of integrated circuits and systems, ISSN 0278-0070, 05/2020, Volume 39, Issue 5, pp. 1059 - 1072
Circuit partitioning | multiple bit upsets (MBUs) | Estimation | reliability | soft error rate (SER) | single event upset (SEU) | Combinational circuits | restructuring | Circuit faults | Integrated circuit reliability | logical masking | Logic gates | combinational circuit | Transient analysis | multiple event transients (METs) | single event transient (SET) | Single Event Transient (SET) | Logical Masking | Multiple Bit Upsets (MBUs) | Restructuring | Single Event Upset (SEU) | Soft Error Rate (SER) | Multiple Event Transients (METs) | Circuit Partitioning | Combinational Circuit | Reliability | Engineering | Computer Science, Interdisciplinary Applications | Technology | Computer Science | Engineering, Electrical & Electronic | Computer Science, Hardware & Architecture | Science & Technology
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7. Full Text Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM
by Heidel, D.F and Marshall, P.W and Pellish, J.A and Rodbell, K.P and LaBel, K.A and Schwank, J.R and Rauch, S.E and Hakey, M.C and Berg, M.D and Castaneda, C.M and Dodd, P.E and Friendlich, M.R and Phan, A.D and Seidleck, C.M and Shaneyfelt, M.R and Xapsos, M.A
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2009, Volume 56, Issue 6, pp. 3499 - 3504
Protons | single event upset | Circuits | NASA | Random access memory | Pulse width modulation | SRAM | Silicon on insulator technology | Space technology | Life estimation | Proton irradiation | CMOS technology | Error correction codes | Single event upset | Static random access memory | Electric properties | Testing | Accelerated tests | Error correcting codes | Orientation | Position (location) | Cross sections
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8. Full Text Experimental and Analytical Study of the Responses of Nanoscale Devices to Neutrons Impinging at Various Incident Angles
by Korkian, Golnaz and Fabero, Juan Carlos and Hubert, Guillaume and Rezaei, Mohammadreza and Mecha, Hortensia and Franco, Francisco J and Puchner, Helmut and Clemente, Juan Antonio
IEEE transactions on nuclear science, ISSN 0018-9499, 11/2020, Volume 67, Issue 11, pp. 2345 - 2352
commercial-off-the-shelf (COTS) | Radiation effects | multiscales single-event phenomena predictive platform (MUSCA-SEP3) | Random access memory | Single event upsets | Neutrons | Tools | single-event upset (SEU) | Sensitivity | Nonvolatile memory | static random access memory (SRAM) | neutron tests | Angle of incidence | SEU | MUSCA SEP3 | SRAM | COTS | Neutron tests | Engineering, Electrical & Electronic | Engineering | Technology | Nuclear Science & Technology | Science & Technology
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9. Full Text High-performance and single event double-upset-immune latch design
by Zhang, Haineng and Liu, Zhongyang and Jiang, Jianwei and Xiao, Jun and Zhang, Zhengxuan and Zou, Shichang
Electronics letters, ISSN 0013-5194, 11/2020, Volume 56, Issue 23, pp. 1243 - 1245
Circuits and systems | recently reported latches | flip‐flops | MOSFET | interlocked branch circuits | SEDU | radiation hardening (electronics) | NMOS transistors | single event double‐upset‐fully‐tolerant latch | single event double‐upset‐immune latch design | PMOS transistors | CMOS logic circuits | 84.56% area‐power‐delay product saving | CMOS integrated circuits | logic design | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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10. Single event phenomena
by Messenger, George C and Ash, Milton S
1997, ISBN 0412097311, xvii, 351
Cosmic rays
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11. Full Text The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets
by Clemens, M. A and Sierawski, B. D and Warren, K. M and Mendenhall, M. H and Dodds, N. A and Weller, R. A and Reed, R. A and Dodd, P. E and Shaneyfelt, M. R and Schwank, J. R and Wender, S. A and Baumann, R. C
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2011, Volume 58, Issue 6, pp. 2591 - 2598
neutron radiation effects | single event mechanism | Single event upset | Computer simulation | Neutrons | energy deposition | Monte Carlo methods | Charge collection | SRAM chips | multiple bit upsets | GEANT4 | Data models | nuclear reactions | Monte Carlo simulation | computer simulation | Electric charge and distribution | Electromagnetic waves | Electric waves | Electromagnetic radiation | Research | Properties | Static random access memory | Single event upsets | Charge | Collection | Devices | Charge materials | Energy (nuclear)
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12. Full Text Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops
by Narasimham, Balaji and Hatami, Safar and Anvar, Ali and Harris, David M and Lin, Alvin and Wang, Jung K and Chatterjee, Indranil and Ni, Kai and Bhuva, Bharat L and Schrimpf, Ronald D and Reed, Robert A and McCurdy, Mike W
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2578 - 2584
Protons | SER | finFET | single event | Single event upsets | soft error | Alpha particles | Neutrons | Flip-flops | FinFETs | latch | flip-flop | heavy-ions | protons | neutrons | Electric properties
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13. Full Text Single event upset investigations on the “Flying Laptop” satellite mission
by Noeldeke, Christoph and Boettcher, Maximilian and Mohr, Ulrich and Gaisser, Steffen and Alvarez Rua, Mikel and Eickhoff, Jens and Leslie, Mike and Von Thun, Matt and Klinkner, Sabine and Varatharajoo, Renuganth
Advances in space research, ISSN 0273-1177, 03/2021, Volume 67, Issue 6, pp. 2000 - 2009
EDAC | “Flying Laptop” satellite | LEO radiation | Single Event Upsets (SEUs) | SRAM | Artificial satellites | Memory (Computers) | Analysis | Investigations | Radiation
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14. Full Text Low-cost single event double-upset tolerant latch design
by Jiang, Jianwei and Xu, Yiran and Ren, Jiangchuan and Zhu, Wenyi and Lin, Dianpeng and Xiao, Jun and Kong, Weiran and Zou, Shichang
Electronics letters, ISSN 0013-5194, 5/2018, Volume 54, Issue 9, pp. 554 - 556
Circuits and systems | flip‐flops | Muller C‐element | up‐to‐date single event double‐upset tolerant latches | soft error | area‐power‐delay product | radiation hardening (electronics) | up‐to‐date SEDU tolerant latch | clock gating | low‐cost single event double‐upset tolerant latch design | logic design | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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15. Full Text Flip-flops soft error rate evaluation approach considering internal single-event transient
by SONG RuiQiang CHEN ShuMing HE YiBai DU YanKang
Science China. Information sciences, ISSN 1674-733X, 2015, Volume 58, Issue 6, pp. 155 - 166
单事件 | 评价方法 | 评估方法 | 软错误率 | 内部设置 | 触发器 | 蒙特卡罗模拟 | 062403 | single-event upset | Monte Carlo | Computer Science | Information Systems and Communication Service | soft error rate | internal SET | flip-flops | Computer Science, Information Systems | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Approximation | Computer simulation | Soft errors | China | Chip formation | Mathematical models | Cross sections | Flip-flops
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16. Full Text Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application
by Peng, Chunyu and Huang, Jiati and Liu, Changyong and Zhao, Qiang and Xiao, Songsong and Wu, Xiulong and Lin, Zhiting and Chen, Junning and Zeng, Xuan
IEEE transactions on very large scale integration (VLSI) systems, ISSN 1063-8210, 02/2019, Volume 27, Issue 2, pp. 407 - 415
Layout | Single event upsets | High speed | SRAM cells | low power | Transistors | Transient analysis | Integrated circuit modeling | radiation-hardened SRAM | single-event–multiple-node upsets (SEMNUs) | single-event upset (SEU) | single-event-multiple-node upsets (SEMNUs) | Engineering, Electrical & Electronic | Engineering | Computer Science, Hardware & Architecture | Technology | Computer Science | Science & Technology | Radiation hardening | Static random access memory | CMOS | Power consumption | Circuit design | Semiconductor devices | Design optimization | Hardening rate
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17. Full Text Electron-Induced Single-Event Upsets in Static Random Access Memory
by King, M. P and Reed, R. A and Weller, R. A and Mendenhall, M. H and Schrimpf, R. D and Sierawski, B. D and Sternberg, A. L and Narasimham, B and Wang, J. K and Pitta, E and Bartz, B and Reed, D and Monzel, C and Baumann, R. C and Deng, X and Pellish, J. A and Berg, M. D and Seidleck, C. M and Auden, E. C and Weeden-Wright, S. L and Gaspard, N. J and Zhang, C. X and Fleetwood, D. M
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2013, Volume 60, Issue 6, pp. 4122 - 4129
Protons | Radiation effects | Energetic electron | single-event effects (SEEs) | Error analysis | Mesons | static random access memory (SRAM) | SRAM chips | error rate | Random access memory | Single event upsets | single-event upset (SEU) | CMOS | Errors | Photocurrent | Computer simulation | X-rays | Voltage | Charge | Deposition
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18. Full Text Single event double node upset tolerance in MOS/spintronic sequential and combinational logic circuits
by Rajaei, Ramin
Microelectronics and reliability, ISSN 0026-2714, 02/2017, Volume 69, pp. 109 - 114
Magnetic tunnel junction (MTJ) | Soft error | Nonvolatility | Single event double node upset (SEDU) | Radiation immunity | STT-MRAM | Single event upset (SEU) | Engineering | Physical Sciences | Nanoscience & Nanotechnology | Technology | Engineering, Electrical & Electronic | Science & Technology - Other Topics | Physics | Science & Technology | Physics, Applied | Integrated circuits | Complementary metal oxide semiconductors | Semiconductor chips
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