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2011, 1st ed., ISBN 9780470767498, xiii, 502
This book introduces the basic concepts necessary to understand Single Event phenomena which could cause random performance errors and catastrophic failures to... 
Electromagnetic pulse | Electronic apparatus and appliances | Protection | Astrionics | Effect of radiation on | Semiconductors | Electronics | ECHNOLOGY & ENGINEERING
Book
2004, ISBN 9812389407, viii, 339
Book
中国物理B:英文版, ISSN 1674-1056, 2017, Volume 26, Issue 8, pp. 542 - 550
The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicon- germanium heterojunction bipolar transistor... 
SiGe异质结双极晶体管 | 硅锗异质结双极晶体管 | 工艺过程 | 三维模拟 | 瞬态电流 | 掺杂浓度 | 单粒子效应 | CAD模拟 | SiGe HBT | single event effects | fabrication process dependence | 3D simulation | PHYSICS, MULTIDISCIPLINARY
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 01/2018, Volume 65, Issue 1, pp. 457 - 461
This paper describes a framework for incorporating linear radiation effects into the statistical machinery of the AE9/AP9 radiation climatology model software... 
Protons | Geometry | Radiation effects | Interpolation | single-event effects (SEEs) | XML | Neutrons | total ionizing dose | space radiation | internal charging | Displacement damage | Kernel | radiation effects | UPSET | NUCLEAR SCIENCE & TECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | Kernels | Climatology | Radiation shielding | Dosage | Machinery | Computer programs
Journal Article
半导体学报:英文版, ISSN 1674-4926, 2015, Volume 36, Issue 11, pp. 101 - 105
This paper presents single event effect(SEE) characteristics of UC1845 AJ pulse width modulators(PWMs) by laser testing. In combination with analysis to map... 
脉宽调制器 | 实验 | 输出脉冲 | 激光测试 | 脉冲宽度调制器 | PWM电路 | 单粒子效应 | 激光脉冲 | single event effect | pulse width modulator | laser simulation | Pulse width | Semiconductors | Lasers | Circuits | Single Event Effects | Waveforms | Pulse duration modulation | Modulators
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 04/2019, Volume 95, pp. 1 - 7
Reliability of ferroelectric random access memories (FRAMs) is an important issue in Space application. In this work, we investigated the impact of total... 
TCAD simulation | Single event effect | Ferroelectric random access memory | Total ionizing dose | IRRADIATION | IMPACT | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | RADIATION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2018, Volume 65, Issue 8, pp. 1914 - 1919
We present a convenient layout-aware circuit-level modeling technique based on two modeling approaches: single spot and distributed circuit representing the... 
Semiconductor device modeling | Solid modeling | CMOS | heavy ions | Sensitivity | single-event effects (SEEs) | modeling | Layout | SPICE | Circuit level | Calibration | Integrated circuit modeling | layout | DESIGN | SIMULATION | SRAM | PREDICTION | ENGINEERING, ELECTRICAL & ELECTRONIC | NUCLEAR SCIENCE & TECHNOLOGY | CHARGE | Integrated circuits | Maps | Layouts | Computer simulation | Data processing | Modelling
Journal Article
半导体学报:英文版, ISSN 1674-4926, 2015, Volume 36, Issue 11, pp. 15 - 24
This paper reviews the status of research in modeling and simulation of single-event effects(SEE) in digital devices and integrated circuits. After introducing... 
仿真建模 | 模拟方法 | 电离辐射 | 半导体器件 | 集成电路 | CMOS电路 | 双极晶体管 | 单粒子效应 | single event effect (SEE) | charge collection | multi-node upset (MNU) | single event upset (SEU) | Computer simulation | Semiconductors | Production methods | Ionization | Soft errors | Charge | Modelling | Devices
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 3088 - 3094
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2016, Volume 63, Issue 6, pp. 2950 - 2961
Journal Article
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