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IEEE Electron Device Letters, ISSN 0741-3106, 06/2018, Volume 39, Issue 6, pp. 877 - 880
Since many years, sub-60 mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation... 
Electric potential | domain growth | dielectric response | Capacitors | Field effect transistors | Switches | Logic gates | polarization | Ferroelectrics | Mathematical model | FeFET | steep subthreshold slope | NEGATIVE CAPACITANCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2017, Volume 38, Issue 4, pp. 418 - 421
In this letter, an n-type short-channel negative capacitance FinFET (NC-FinFET) with a hysteresis window of 0.48 V, an on-/off-current ratio of 10 7 , and a... 
S/D extension length (Lext) | Capacitors | Switches | Logic gates | Steep switching | Capacitance | FinFETs | ferroelectric capacitor | Hysteresis | negative capacitance FinFET | FILMS | DEVICES | S/D extension length (L-ext) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Nano Letters, ISSN 1530-6984, 03/2014, Volume 14, Issue 3, pp. 1687 - 1691
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2017, Volume 38, Issue 12, pp. 1759 - 1762
Sub-60-mV/decade subthreshold slope (SS) without the cost of hysteresis using smart electrostrictive-piezoelectric gate insulator of a field-effect transistor... 
ON-current boost | Capacitors | Metals | Logic gates | Insulators | Capacitance | electrostrictive-piezoelectric insulator | Transistors | Sub-60-mV/decade steep slope | non-hysteretic transistor | Strain
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 12/2017, Volume 38, Issue 12, pp. 1759 - 1762
Sub-60mV/decade subthreshold slope (SS) without the cost of hysteresis using smart electrostrictive-piezoelectric gate insulator of a field-effect transistor... 
FIELD-EFFECT TRANSISTOR | Sub-60mV/decade steep slope | ON-current boost | DIELECTRICS | FERROELECTRIC CAPACITOR | DEVICE | electrostrictive-piezoelectric insulator | NEGATIVE CAPACITANCE | FINFETS | non-hysteretic transistor | LAYER | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1336 - 1342
For the first time, we experimentally demonstrate an FET with a polycrystalline silicon (poly-Si) device featuring supersteep subthreshold slope (SS) around 20... 
Thyristors | Electric potential | thin-film transistor (TFT) | Field effect transistors | polycrystalline silicon | 3-D nand | dual channel | thyristor | Logic gates | steep subthreshold slope (SS) | Silicon | Flash | Junctions | Hysteresis | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Polysilicon | Research | Transistors | Temperature dependence
Journal Article
IEICE Transactions on Electronics, ISSN 0916-8524, 05/2018, Volume E101C, Issue 5, pp. 334 - 337
We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly... 
Steep subthreshold slope | Floating body effect | SOI | Feedback | Hysteresis | feedback | floating body effect | MOSFETS | steep subthreshold slope | hysteresis | ENGINEERING, ELECTRICAL & ELECTRONIC | Floating structures
Journal Article
IEICE Transactions on Electronics, ISSN 0916-8524, 11/2018, Volume E101C, Issue 11, pp. 916 - 922
In this paper, we review a super-steep subthreshold slope (SS) (< 1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect... 
Floating-body | Ultralow power | Steep subthreshold slope | SOI | Body-tied | body-tied | TRANSISTORS | floating-body | ultralow power | SNAPBACK | LATCH | MODEL | steep subthreshold slope | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductors | Semiconductor devices | Computer simulation | Field effect transistors | Computer aided design--CAD | Silicon | Threshold voltage | Substrates | MOSFETs
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2018, Volume 6, Issue 1, pp. 565 - 570
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 11/2015, Volume 3, Issue 6, pp. 452 - 456
Dual-independent-gate silicon FinFET has demonstrated a steep subthreshold slope (SS) when a positive feedback induced by weak impact ionization is triggered.... 
Feedback | Schottky barriers | FinFET | FinFETs | Impact ionization | Schottky barrier | steep subthreshold slope | feedback | impact ionization | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2018, Volume 6, Issue 1, pp. 1213 - 1219
In this paper, n-channel and p-channel super-steep subthreshold slope (SS) PN-body tied (PNBT) silicon on insulator field-effect transistors (SOI-FETs) are... 
feedback | Thyristors | MOSFET | Current measurement | thyristor | SOI MOSFET | Logic gates | Impact ionization | Body tied | floating body | steep subthreshold slope | DEVICE | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | Semiconductor devices | CMOS | Field effect transistors
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 11/2011, Volume 32, Issue 11, pp. 1504 - 1506
We present a vertical-silicon-nanowire-based p-type tunneling field-effect transistor (TFET) using CMOS-compatible process flow. Following our recently... 
gate all around (GAA) | TRANSISTORS | CMOS technology | subthreshold swing (SS) | tunneling field-effect transistor (TFET) | vertical silicon nanowire (SiNW) | top-down | steep subthreshold slope | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), ISSN 1946-1569, 09/2013, pp. 101 - 104
Super steep subthreshold slope characteristics in the FB and the BT are investigated with TCAD. The mechanism of the enhanced DIBL and the addition of the... 
MOSFET | Electric potential | Voltage measurement | Floating-Body | Current measurement | Parasitic Bipolar Transistor | SOI MOSFET | Logic gates | Impact ionization | Body-Tied | steep subthreshold slope
Conference Proceeding
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2019, Volume 66, Issue 10, pp. 4425 - 4432
In this article, we propose a novel nanotube (NT) tunneling field-effect transistor with a core source (CSNT-TFET) which uses line tunneling. We systematically... 
Semiconductor device modeling | Performance evaluation | TFETs | line tunneling | nanotube (NT) | Tunneling | Logic gates | low power | Silicon | Band-to-band tunneling (BTBT) | Junctions | steep subthreshold slope
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2016, Volume 37, Issue 7, pp. 932 - 934
In this letter, we demonstrate a steep slope field-effect transistor (FET) using a threshold switching (TS) device. The Ag/TiO 2 -based TS device reported in... 
subthreshold slope | Threshold switching | Field effect transistors | Logic gates | Threshold voltage | Impact ionization | Silicon | field-effect transistor | steep slope | Switching circuits | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2016, Volume 37, Issue 8, pp. 1055 - 1058
We study the positive bias temperature instability (PBTI) of InGaAs tunnel-FETs (TFETs) with two different indium fractions (53% and 70%) and compare with... 
InGaAs | MOSFET | TFETs | steep subthreshold slope devices | TFET | reliability | Logic gates | Indium gallium arsenide | Robustness | Threshold voltage | positive bias temperature instability (PBTI) | Stress | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | Stability | Swing | Instability | Oxides | Devices | Channels | MOSFETs
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2012, Volume 33, Issue 11, pp. 1523 - 1525
In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the... 
steep swing switch | subthreshold slope | Analytical models | tunnel-FET (TFET) | Modulation | subthermal subthreshold swing | Tunneling | Silicon | Band-to-band tunneling (BTBT) | FETs | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2014, Volume 35, Issue 12, pp. 1170 - 1172
The source-pocket (p-n-p-n) tunnel field effect transistor (TFET) has a narrow and highly doped N + pocket layer between the source and channel to enhance the... 
Plasma applications | Field effect transistors | Tunneling | Source-pocket (PNPN) TFET | 2D TCAD simulation | pocket implantation | Silicon | Semiconductor process modeling | steep subthreshold slope | tunneling | DESIGN | FET | PROPOSAL | RECRYSTALLIZED POLYCRYSTALLINE SILICON | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, ISSN 1598-1657, 2017, Volume 17, Issue 2, pp. 216 - 222
The most prominent challenge for MOSFET scaling is to reduce power consumption; however, the supply voltage (V-DD) cannot be scaled down because of the carrier... 
Low power devices | Steep subthreshold slope | Positive feedback | Field-effect transistor | positive feedback | PHYSICS, APPLIED | DEVICE | field-effect transistor | steep subthreshold slope | ENGINEERING, ELECTRICAL & ELECTRONIC | 전기공학
Journal Article
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