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IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2019, Volume 66, Issue 8, pp. 3659 - 3667
This paper proposes a strained Si-based single drift nano-mixed tunnel avalanche transit time (MITATT) oscillator capable of generating high RF power in the... 
terahertz frequency | strain-engineered silicon | Lattices | optical sensor | Germanium | Silicon | Nanoscale devices | Nanomixed tunnel avalanche transit time (MITATT) | Optical sensors | process-induced strain | Oscillators | Strain
Journal Article
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 08/2019, Volume 66, Issue 8, pp. 3659 - 3667
This paper proposes a strained Si-based single drift nano-mixed tunnel avalanche transit time (MITATT) oscillator capable of generating high RF power in the... 
terahertz frequency | CW OSCILLATION | PHYSICS, APPLIED | strain-engineered silicon | MOBILITY | optical sensor | IMPATT DIODES | Nanomixed tunnel avalanche transit time (MITATT) | INDUCED STRESS | process-induced strain | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Advanced Electronic Materials, ISSN 2199-160X, 03/2019, Volume 5, Issue 3, pp. 1800797 - n/a
Carrier mobility is a key parameter for the operation of electronic devices as it determines the ON state current and switching speed/frequency response of... 
carrier mobility | strain‐engineered electronics | density functional theory | transistors | phosphorene | strain-engineered electronics | BANDGAP | VAN | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | BLACK | MONOLAYER
Journal Article
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