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Nano Letters, ISSN 1530-6984, 08/2015, Volume 15, Issue 8, pp. 4905 - 4913
In this study, we present the steep switching characteristics of bendable feedback field-effect transistors (FBFETs) consisting of p(+)-i-n(+) Si nanowires... 
feedback loop | sub-k B T/q switch | subthreshold swing | Field-effect transistor | silicon nanowires | bendable substrate | CMOS DEVICES | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | MOS | sub-k(B)T/q switch
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