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IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, pp. 2306 - 2312
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2015, Volume 62, Issue 4, pp. 1255 - 1261
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2017, Volume 121, Issue 24
We present a new model for surface roughness (SR) scattering in n-type multi-gate FETs (MuGFETs) and gate-all-around nanowire FETs with fairly arbitrary... 
Computer simulation | Scattering | Variations | Surface roughness | Matrix methods | Mathematical analysis | Boltzmann transport equation | Linear transformations | Electron mobility | Nanowires | Electron transport | Cross sections | Electron gas
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 11/2014, Volume 53, Issue 11, pp. 114301 - 1-114301-8
It is a common view that ballistic transport is enhanced by channel length scaling because of a decreased scattering number. On the other hand, the acoustic... 
MONTE-CARLO | TRANSISTOR | PHYSICS, APPLIED | SOI MOSFETS | FIELD | LAYER | ELECTRON-TRANSPORT | LIMITED MOBILITY | MODULATION | Computer simulation | Scattering | Fluctuation | Drains | Surface roughness | Acoustics | Transport | Channels | MOSFETs
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2018, Volume 6, Issue 1, pp. 653 - 657
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2011, Volume 109, Issue 11, pp. 113711 - 113711-8
We present the theory of an ad hoc scattering mechanism for carriers confined in a heterostructure (HS) made of polar materials, such as zinc blends, nitrides,... 
TRANSPORT | PHYSICS, APPLIED | MOBILITY | CONDUCTIVITY | III-V NITRIDE | FIELD | HOLES | GAS | GAAS/ALXGA1-XAS HETEROJUNCTION | PARTICLE RELAXATION-TIME | ALLOY SCATTERING | Thermal properties | Measurement | Technology application | Usage | Polarization (Electricity) | Piezoelectric materials | Aluminum compounds | Surface roughness | Scattering (Physics) | Gallium compounds | Methods
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2010, Volume 57, Issue 9, pp. 2057 - 2066
Journal Article
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 09/2010, Volume 57, Issue 9, pp. 2057 - 2066
In this paper, a novel method to directly determine the surface roughness scattering-limited mobilities (mu(sr)) of electrons and holes in Si MOSFETs from the... 
MOSFET | Mobility calculation model | PHYSICS, APPLIED | INVERSION LAYER MOBILITY | IMAGES | surface roughness scattering | ENHANCEMENT | Si/SiO2 interface | strained Si | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
European Solid-State Device Research Conference, ISSN 1930-8876, 10/2016, Volume 2016-, pp. 188 - 191
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 02/2011, Volume 32, Issue 2, pp. 113 - 115
This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (μ SR ) under process-induced uniaxial strain and compares the... 
Strontium | Temperature measurement | MOSFET | Scattering | Surface morphology | strain silicon | Surface roughness | Rough surfaces | surface-roughness-limited mobility | MOSFETs | uniaxial | EXTRACTION | SI MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Simulation | Extraction | Assessments | Devices | Strain
Journal Article
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, 2012, Volume 159, Issue 1, pp. H57 - H60
In this study, we experimentally extract Si/SiO2 interface roughness of biaxially-tensile strained Si (s-Si) MOSFETs through high-resolution transmission... 
ELECTROCHEMISTRY | SURFACE-ROUGHNESS | MOBILITY | SCATTERING | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
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