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03/2017, ISBN 9789814745512, 422
eBook
Semiconductor Science and Technology, ISSN 0268-1242, 09/2017, Volume 32, Issue 10, p. 104009
The cubic form of SiC (beta- or 3C-)compared to the hexagonal alpha-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost and can be grown... 
wide bandgap | silicon carbide | technology computer aided design (TCAD) | PHYSICS, CONDENSED MATTER | ELECTRON | SEMICONDUCTOR | TEMPERATURE-DEPENDENCE | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON-CARBIDE | BAND-GAP | LIFETIME | IONIZATION RATES | ENGINEERING, ELECTRICAL & ELECTRONIC | GROWTH | DEVICES
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 11/2016, Volume 836, pp. 113 - 121
In the present work, detailed simulation using Technology Computer Aided Design (TCAD) tool, Silvaco for non-irradiated and irradiated LGAD (Low Gain Avalanche... 
Low Gain Avalanche Detector | Detector modeling and simulations | Radiation hard detectors | INSTRUMENTS & INSTRUMENTATION | NUCLEAR SCIENCE & TECHNOLOGY | PHYSICS, NUCLEAR | PHYSICS, PARTICLES & FIELDS | Computer-aided design | Electric fields | Analysis | Detectors
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 06/2017, Volume 178, pp. 66 - 70
In this work, a methodology to estimate ATLAS TCAD simulation parameters from experimental data is presented, with the aim of analyzing the impact of interface... 
Random telegraph noise (RTN) | Technology computer aided design (TCAD) | Variability | Bias temperature instability (BTI) | Interface traps | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Computer-aided design | Transistors | Analysis | Methods
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2018, Volume 88-90, pp. 1083 - 1089
Technology Computer Aided Design (TCAD) tools can be used to effectively study and analyze a multitude of reliability issues in semiconductor devices. In the... 
BV walkout | Thermo-mechanical stress | DRAM | Row hammer | RDL | NBTI | Hot carrier degradation | CPI | PHYSICS, APPLIED | HOT-CARRIER | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | DEGRADATION
Journal Article
2017, ISBN 9811030650, 337
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor)... 
CAD/CAM systems | Nanoelectronics
eBook
03/2017, ISBN 9789814745512, 438
eBook
Active and Passive Electronic Components, ISSN 0882-7516, 5/2015, Volume 2015, pp. 1 - 9
TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on... 
Metal oxide semiconductor field effect transistors | Usage | Models | Computer-aided design | Properties | Simulation | Annealing | Nanotechnology
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2015, Volume 62, Issue 2, pp. 493 - 500
Journal Article
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