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Analytical and Bioanalytical Chemistry, ISSN 1618-2642, 2/2012, Volume 402, Issue 5, pp. 1813 - 1826
Journal Article
Chemical Reviews, ISSN 0009-2665, 11/2016, Volume 116, Issue 22, pp. 13714 - 13751
Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic... 
LIGHT-EMITTING-DIODES | P-TYPE | SELF-ASSEMBLED MONOLAYERS | N-TYPE DOPANT | TRANSITION-METAL OXIDES | THRESHOLD-VOLTAGE | THIN-FILM TRANSISTORS | CHARGE-TRANSFER | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | MOLYBDENUM DITHIOLENE COMPLEX
Journal Article
Advanced Materials, ISSN 0935-9648, 08/2018, Volume 30, Issue 32, pp. 1870241 - n/a
A novel “triple‐acceptors architecture” strategy is used in a new semiconducting polymer by Shuai Wang, Yunlong Guo, Yunqi Liu and co‐workers in article number... 
molecular packing | ambipolar polymer semiconductor | organic thin‐film transistor | effective mass | molecular architecture | Circuit components | Thin films | Dielectric films | Polymers | Field-effect transistors | Architecture | Semiconductor devices | Circuit design | Transistors
Journal Article
Advanced Materials, ISSN 0935-9648, 05/2009, Volume 21, Issue 20, pp. 2007 - 2022
Journal Article
2003, ISBN 9780824709594, 486
This is a single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines... 
Thin film transistors | Electronics & communications engineering | Transistors
eBook
2019, ISBN 3039210106
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power... 
MOSFET | n/a | total ionizing dose (TID) | low power consumption | process simulation | two-dimensional material | negative-capacitance | power consumption | technology computer aided design (TCAD) | thin-film transistors (TFTs) | band-to-band tunneling (BTBT) | nanowires | inversion channel | metal oxide semiconductor field effect transistor (MOSFET) | spike-timing-dependent plasticity (STDP) | field effect transistor | segregation | systematic variations | Sentaurus TCAD | indium selenide | nanosheets | technology computer-aided design (TCAD) | high-? dielectric | subthreshold bias range | statistical variations | fin field effect transistor (FinFET) | compact models | non-equilibrium Green’s function | etching simulation | highly miniaturized transistor structure | compact model | silicon nanowire | surface potential | Silicon-Germanium source/drain (SiGe S/D) | nanowire | plasma-aided molecular beam epitaxy (MBE) | phonon scattering | mobility | silicon-on-insulator | drain engineered | device simulation | variability | semi-floating gate | synaptic transistor | neuromorphic system | theoretical model | CMOS | ferroelectrics | tunnel field-effect transistor (TFET) | SiGe | metal gate granularity | buried channel | ON-state | bulk NMOS devices | ambipolar | piezoelectrics | tunnel field effect transistor (TFET) | FinFETs | polarization | field-effect transistor | line edge roughness | random discrete dopants | radiation hardened by design (RHBD) | low energy | flux calculation | doping incorporation | low voltage | topography simulation | MOS devices | low-frequency noise | high-k | layout | level set | process variations | subthreshold | metal gate stack | electrostatic discharge (ESD)
eBook