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Proceedings of the IEEE, ISSN 0018-9219, 01/2009, Volume 97, Issue 1, pp. 43 - 48
Journal Article
IEEE Transactions on Circuits and Systems II: Express Briefs, ISSN 1549-7747, 01/2017, Volume 64, Issue 1, pp. 11 - 15
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 04/2012, Volume 20, Issue 4, pp. 711 - 722
Journal Article
IEEE transactions on electron devices, ISSN 1557-9646, 2018, Volume 65, Issue 5, pp. 1880 - 1886
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 12/2017, Volume 12, Issue 1, pp. 1 - 9
Journal Article
Journal of micromechanics and microengineering, ISSN 1361-6439, 2018, Volume 28, Issue 4, p. 045004
Through-silicon-via (TSV) filling with optimum electrodeposition parameters is still a challenge in the industry, especially for via with different depths... 
optimum current density | copper electrodeposition | filling models | through-silicon-via (TSV) | via depth | PHYSICS, APPLIED | MECHANISM | DEPOSITION | NANOSCIENCE & NANOTECHNOLOGY | PARAMETERS | ENGINEERING, ELECTRICAL & ELECTRONIC | INSTRUMENTS & INSTRUMENTATION | THROUGH-SILICON | MICROVIA | GROWTH | ASPECT-RATIO | OPTIMIZATION
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 03/2015, Volume 23, Issue 3, pp. 493 - 506
Journal Article
IEICE Electronics Express, ISSN 1349-2543, 06/2018, Volume 15, Issue 11, p. 20180421
Journal Article
Electrochimica Acta, ISSN 0013-4686, 05/2015, Volume 163, pp. 174 - 181
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 08/2015, Volume 23, Issue 8, pp. 1567 - 1571
This brief presents the design, validation, and evaluation of an efficient online fault tolerance technique for fault detection and recovery in presence of three through-silicon-vias (TSV) defects: 1) voids; 2... 
Resistance | Fault tolerance | delay test | through-silicon-vias (TSV) | Fault tolerant systems | Maintenance engineering | 3-D | Circuit faults | Through-silicon vias | Delamination | online test | fault tolerance | COMPUTER SCIENCE, HARDWARE & ARCHITECTURE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2014, Volume 35, Issue 8, pp. 865 - 867
Motional resistance of TSV-based resonator devices with 3D integration techniques is investigated at the operating oscillating mode... 
Resistance | Three-dimensional (3D) integration | Three-dimensional displays | motional resistance | Resonant frequency | Crystals | Capacitance | Frequency measurement | Through-silicon vias | concave through silicon via (TSV) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Electrochimica Acta, ISSN 0013-4686, 12/2016, Volume 221, pp. 70 - 79
Four types of via-filling models are developed in this paper, considering distinct chemical behaviour of additives used in the TSV electroplating... 
Copper electrodeposition | Filling Models | Additives | ELECTROCHEMISTRY | SUPPRESSOR | MICROVIA | MECHANISM | GROWTH | PATTERNS | THROUGH-SILICON-VIAS | Electrical engineering | Analysis | Models
Journal Article
Nanotechnology, ISSN 1361-6528, 2019, Volume 30, Issue 3, p. 035201
.... Passive thermal management based on high thermal conductivity materials or through-silicon vias (TSVs... 
TEC | through silicon via | thermal transport | Peltier effect | CONDUCTANCE | PHYSICS, APPLIED | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | PHONON TRANSPORT | CHALLENGES | TEMPERATURE | CONDUCTIVITY | RESISTANCE | SYSTEMS | NANOSCALE | NANOWIRES
Journal Article
Microelectronics and reliability, ISSN 0026-2714, 2018, Volume 91, pp. 52 - 66
Journal Article
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